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Journal Abstract Search

283 related items for PubMed ID: 28860571

  • 1. Understanding stability diagram of perpendicular magnetic tunnel junctions.
    Skowroński W, Czapkiewicz M, Ziętek S, Chęciński J, Frankowski M, Rzeszut P, Wrona J.
    Sci Rep; 2017 Aug 31; 7(1):10172. PubMed ID: 28860571
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  • 4. A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction.
    Ikeda S, Miura K, Yamamoto H, Mizunuma K, Gan HD, Endo M, Kanai S, Hayakawa J, Matsukura F, Ohno H.
    Nat Mater; 2010 Sep 31; 9(9):721-4. PubMed ID: 20622862
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  • 5. Effect of coupling ability between a synthetic antiferromagnetic layer and pinned layer on a bridging layer of Ta, Ti, and Pt in perpendicular-magnetic tunnel junctions.
    Lee DY, Shim TH, Park JG.
    Nanotechnology; 2016 Jul 22; 27(29):295705. PubMed ID: 27292593
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  • 6. Voltage-induced magnetization dynamics in CoFeB/MgO/CoFeB magnetic tunnel junctions.
    Miura K, Yabuuchi S, Yamada M, Ichimura M, Rana B, Ogawa S, Takahashi H, Fukuma Y, Otani Y.
    Sci Rep; 2017 Feb 17; 7():42511. PubMed ID: 28209976
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  • 7. Anomalous Tunnel Magnetoresistance and Spin Transfer Torque in Magnetic Tunnel Junctions with Embedded Nanoparticles.
    Useinov A, Ye LX, Useinov N, Wu TH, Lai CH.
    Sci Rep; 2015 Dec 18; 5():18026. PubMed ID: 26681336
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  • 8. Predictive Materials Design of Magnetic Random-Access Memory Based on Nanoscale Atomic Structure and Element Distribution.
    Li X, Sasaki T, Grezes C, Wu D, Wong K, Bi C, Ong PV, Ebrahimi F, Yu G, Kioussis N, Wang W, Ohkubo T, Khalili Amiri P, Wang KL.
    Nano Lett; 2019 Dec 11; 19(12):8621-8629. PubMed ID: 31697502
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  • 9. A highly thermally stable sub-20 nm magnetic random-access memory based on perpendicular shape anisotropy.
    Perrissin N, Lequeux S, Strelkov N, Chavent A, Vila L, Buda-Prejbeanu LD, Auffret S, Sousa RC, Prejbeanu IL, Dieny B.
    Nanoscale; 2018 Jul 05; 10(25):12187-12195. PubMed ID: 29923577
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  • 10. Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance.
    Wang M, Cai W, Cao K, Zhou J, Wrona J, Peng S, Yang H, Wei J, Kang W, Zhang Y, Langer J, Ocker B, Fert A, Zhao W.
    Nat Commun; 2018 Feb 14; 9(1):671. PubMed ID: 29445186
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  • 11. MnGa-based fully perpendicular magnetic tunnel junctions with ultrathin Co2MnSi interlayers.
    Mao S, Lu J, Zhao X, Wang X, Wei D, Liu J, Xia J, Zhao J.
    Sci Rep; 2017 Feb 24; 7():43064. PubMed ID: 28233780
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  • 12. Ultrathin perpendicular magnetic anisotropy CoFeB free layers for highly efficient, high speed writing in spin-transfer-torque magnetic random access memory.
    Iwata-Harms JM, Jan G, Serrano-Guisan S, Thomas L, Liu H, Zhu J, Lee YJ, Le S, Tong RY, Patel S, Sundar V, Shen D, Yang Y, He R, Haq J, Teng Z, Lam V, Liu P, Wang YJ, Zhong T, Fukuzawa H, Wang PK.
    Sci Rep; 2019 Dec 19; 9(1):19407. PubMed ID: 31857596
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  • 13. Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers.
    Zhou B, Khanal P, Benally OJ, Lyu D, Gopman DB, Enriquez A, Habiboglu A, Warrilow K, Wang JP, Wang WG.
    Sci Rep; 2023 Mar 01; 13(1):3454. PubMed ID: 36859656
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  • 14. The Influence of Capping Layers on Tunneling Magnetoresistance and Microstructure in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions upon Annealing.
    Kim G, Lee S, Lee S, Song B, Lee BK, Lee D, Lee JS, Lee MH, Kim YK, Park BG.
    Nanomaterials (Basel); 2023 Sep 19; 13(18):. PubMed ID: 37764621
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  • 15. Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control.
    Liu H, Wang R, Guo P, Wen Z, Feng J, Wei H, Han X, Ji Y, Zhang S.
    Sci Rep; 2015 Dec 14; 5():18269. PubMed ID: 26658213
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  • 16. Voltage-Assisted Magnetic Switching in MgO/CoFeB-Based Magnetic Tunnel Junctions by Way of Interface Reconstruction.
    Ko J, Hong J.
    ACS Appl Mater Interfaces; 2017 Dec 06; 9(48):42296-42301. PubMed ID: 29154533
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  • 17. Ultrathin W space layer-enabled thermal stability enhancement in a perpendicular MgO/CoFeB/W/CoFeB/MgO recording frame.
    Kim JH, Lee JB, An GG, Yang SM, Chung WS, Park HS, Hong JP.
    Sci Rep; 2015 Nov 20; 5():16903. PubMed ID: 26584638
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  • 18. Voltage control of magnetic anisotropy in epitaxial Ru/Co2FeAl/MgO heterostructures.
    Wen Z, Sukegawa H, Seki T, Kubota T, Takanashi K, Mitani S.
    Sci Rep; 2017 Mar 23; 7():45026. PubMed ID: 28332569
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  • 19. Spin reorientation transition in CoFeB/MgO/CoFeB tunnel junction enabled by ultrafast laser-induced suppression of perpendicular magnetic anisotropy.
    Shelukhin LA, Gareev RR, Zbarsky V, Walowski J, Münzenberg M, Pertsev NA, Kalashnikova AM.
    Nanoscale; 2022 Jun 09; 14(22):8153-8162. PubMed ID: 35621055
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  • 20. Interface characterization of epitaxial Fe/MgO/Fe magnetic tunnel junctions.
    Wang SG, Ward RC, Hesjedal T, Zhang XG, Wang C, Kohn A, Ma QL, Zhang J, Liu HF, Han XF.
    J Nanosci Nanotechnol; 2012 Feb 09; 12(2):1006-23. PubMed ID: 22629887
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