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Journal Abstract Search

179 related items for PubMed ID: 28948771

  • 1. Electric Field Manipulated Multilevel Magnetic States Storage in FePt/(011) PMN-PT Heterostructure.
    Zhao X, Wen J, Yang B, Zhu H, Cao Q, Wang D, Qian Z, Du Y.
    ACS Appl Mater Interfaces; 2017 Oct 18; 9(41):36038-36044. PubMed ID: 28948771
    [Abstract] [Full Text] [Related]

  • 2. Multilevel Resistance Switching Memory in La2/3Ba1/3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (011) Heterostructure by Combined Straintronics-Spintronics.
    Zhou W, Xiong Y, Zhang Z, Wang D, Tan W, Cao Q, Qian Z, Du Y.
    ACS Appl Mater Interfaces; 2016 Mar 02; 8(8):5424-31. PubMed ID: 26846130
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  • 6. Anisotropic nonvolatile magnetization controlled by electric field in amorphous SmCo thin films grown on (011)-cut PMN-PT substrates.
    Liang W, Hu F, Zhang J, Kuang H, Li J, Xiong J, Qiao K, Wang J, Sun J, Shen B.
    Nanoscale; 2018 Dec 20; 11(1):246-257. PubMed ID: 30534792
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  • 8. Strain assisted magnetoelectric coupling in ordered nanomagnets of CoFe2O4/SrRuO3/(Pb(Mg1/3Nb2/3)O3-PbTiO3) heterostructures.
    Ahlawat A, Khan AA, Deshmukh P, Bhartiya S, Satapathy S, Shirolkar MM, Wang H, Choudhary RJ.
    J Phys Condens Matter; 2022 May 30; 34(30):. PubMed ID: 35561671
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  • 9. Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure.
    Wang J, Chen A, Li P, Zhang S.
    Materials (Basel); 2021 Aug 17; 14(16):. PubMed ID: 34443144
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  • 10. Non-volatile 180° magnetization reversal by an electric field in multiferroic heterostructures.
    Yang SW, Peng RC, Jiang T, Liu YK, Feng L, Wang JJ, Chen LQ, Li XG, Nan CW.
    Adv Mater; 2014 Nov 05; 26(41):7091-5. PubMed ID: 25213017
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  • 12. Magnetic-Field-Assisted Electric-Field-Induced Domain Switching of a Magnetic Single Domain in a Multiferroic/Magnetoelectric Ni Nanochevron/[Pb(Mg1/3Nb2/3)O3]0.68-[PbTiO3]0.32 (PMN-PT) Layered Structure.
    Cheng CC, Chen YJ, Lin SH, Wang HM, Lin GP, Chung TK.
    Micromachines (Basel); 2023 Dec 23; 15(1):. PubMed ID: 38258155
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  • 13. Four-state memory based on a giant and non-volatile converse magnetoelectric effect in FeAl/PIN-PMN-PT structure.
    Wei Y, Gao C, Chen Z, Xi S, Shao W, Zhang P, Chen G, Li J.
    Sci Rep; 2016 Jul 15; 6():30002. PubMed ID: 27417902
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  • 15. Effects of electric field and light on resistivity switching of Eu0.7Sr0.3MnO3 thin films.
    Zheng M, Zhang Y, Wang S, Yang J, Guan P, Zhang B, Fan H, Yan S, Ni H, Yang C.
    Phys Chem Chem Phys; 2024 Feb 07; 26(6):4968-4974. PubMed ID: 38230694
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  • 16. In-plane electric field controlled ferromagnetism and anisotropic magnetoresistance in an LSMO/PMN-PT heterostructure.
    Guo Q, Xu X, Wang F, Lu Y, Chen J, Wu Y, Meng K, Wu Y, Miao J, Jiang Y.
    Nanotechnology; 2018 Jun 01; 29(22):224003. PubMed ID: 29528849
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  • 17. Electric field control of magnetism through modulating phase separation in (011)-Nd0.5Sr0.5MnO3/PMN-PT heterostructures.
    Liu Y, Xu Z, Qiao K, Shen F, Xiao A, Wang J, Ma T, Hu F, Shen B.
    Nanoscale; 2021 May 06; 13(17):8030-8037. PubMed ID: 33956930
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  • 18. Ferroelectric-Modulated MoS2 Field-Effect Transistors as Multilevel Nonvolatile Memory.
    Xu L, Duan Z, Zhang P, Wang X, Zhang J, Shang L, Jiang K, Li Y, Zhu L, Gong Y, Hu Z, Chu J.
    ACS Appl Mater Interfaces; 2020 Oct 07; 12(40):44902-44911. PubMed ID: 32931241
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  • 19. Electric-field-modulated nonvolatile resistance switching in VO₂/PMN-PT(111) heterostructures.
    Zhi B, Gao G, Xu H, Chen F, Tan X, Chen P, Wang L, Wu W.
    ACS Appl Mater Interfaces; 2014 Apr 09; 6(7):4603-8. PubMed ID: 24634978
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