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357 related items for PubMed ID: 29147699

  • 1. Strain relaxation and ambipolar electrical transport in GaAs/InSb core-shell nanowires.
    Rieger T, Zellekens P, Demarina N, Hassan AA, Hackemüller FJ, Lüth H, Pietsch U, Schäpers T, Grützmacher D, Lepsa MI.
    Nanoscale; 2017 Nov 30; 9(46):18392-18401. PubMed ID: 29147699
    [Abstract] [Full Text] [Related]

  • 2. Self-catalyzed MBE grown GaAs/GaAs(x)Sb(1-x) core-shell nanowires in ZB and WZ crystal structures.
    Ghalamestani SG, Munshi AM, Dheeraj DL, Fimland BO, Weman H, Dick KA.
    Nanotechnology; 2013 Oct 11; 24(40):405601. PubMed ID: 24028926
    [Abstract] [Full Text] [Related]

  • 3. Anomalous Strain Relaxation in Core-Shell Nanowire Heterostructures via Simultaneous Coherent and Incoherent Growth.
    Lewis RB, Nicolai L, Küpers H, Ramsteiner M, Trampert A, Geelhaar L.
    Nano Lett; 2017 Jan 11; 17(1):136-142. PubMed ID: 28001430
    [Abstract] [Full Text] [Related]

  • 4. All zinc-blende GaAs/(Ga,Mn)As core-shell nanowires with ferromagnetic ordering.
    Yu X, Wang H, Pan D, Zhao J, Misuraca J, von Molnár S, Xiong P.
    Nano Lett; 2013 Apr 10; 13(4):1572-7. PubMed ID: 23517546
    [Abstract] [Full Text] [Related]

  • 5. Growth of dilute nitride GaAsN/GaAs heterostructure nanowires on Si substrates.
    Araki Y, Yamaguchi M, Ishikawa F.
    Nanotechnology; 2013 Feb 15; 24(6):065601. PubMed ID: 23324475
    [Abstract] [Full Text] [Related]

  • 6. Bi incorporation and segregation in the MBE-grown GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires.
    Sadowski J, Kaleta A, Kryvyi S, Janaszko D, Kurowska B, Bilska M, Wojciechowski T, Domagala JZ, Sanchez AM, Kret S.
    Sci Rep; 2022 Apr 09; 12(1):6007. PubMed ID: 35397635
    [Abstract] [Full Text] [Related]

  • 7. Epitaxial GaAs/AlGaAs core-multishell nanowires with enhanced photoluminescence lifetime.
    Zhou C, Zhang XT, Zheng K, Chen PP, Matsumura S, Lu W, Zou J.
    Nanoscale; 2019 Apr 04; 11(14):6859-6865. PubMed ID: 30912781
    [Abstract] [Full Text] [Related]

  • 8. Electronic Structure and Epitaxy of CdTe Shells on InSb Nanowires.
    Badawy G, Zhang B, Rauch T, Momand J, Koelling S, Jung J, Gazibegovic S, Moutanabbir O, Kooi BJ, Botti S, Verheijen MA, Frolov SM, Bakkers EPAM.
    Adv Sci (Weinh); 2022 Apr 04; 9(12):e2105722. PubMed ID: 35182039
    [Abstract] [Full Text] [Related]

  • 9. Strain accommodation in Ga-assisted GaAs nanowires grown on silicon (111).
    Biermanns A, Breuer S, Trampert A, Davydok A, Geelhaar L, Pietsch U.
    Nanotechnology; 2012 Aug 03; 23(30):305703. PubMed ID: 22751267
    [Abstract] [Full Text] [Related]

  • 10. Selective-Area MOCVD Growth and Carrier-Transport-Type Control of InAs(Sb)/GaSb Core-Shell Nanowires.
    Ji X, Yang X, Du W, Pan H, Yang T.
    Nano Lett; 2016 Dec 14; 16(12):7580-7587. PubMed ID: 27960521
    [Abstract] [Full Text] [Related]

  • 11. Thermally pressure-induced partial structural phase transitions in core-shell InSb-SiO2 nanoballs/microballs: characterization, size and interface effect.
    Wu JM, Huang HJ, Lin YH.
    Nanotechnology; 2014 Oct 03; 25(39):395705. PubMed ID: 25208586
    [Abstract] [Full Text] [Related]

  • 12. All-wurtzite (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy.
    Siušys A, Sadowski J, Sawicki M, Kret S, Wojciechowski T, Gas K, Szuszkiewicz W, Kaminska A, Story T.
    Nano Lett; 2014 Aug 13; 14(8):4263-72. PubMed ID: 24971488
    [Abstract] [Full Text] [Related]

  • 13. In-plane InSb nanowires grown by selective area molecular beam epitaxy on semi-insulating substrate.
    Desplanque L, Bucamp A, Troadec D, Patriarche G, Wallart X.
    Nanotechnology; 2018 Jul 27; 29(30):305705. PubMed ID: 29738312
    [Abstract] [Full Text] [Related]

  • 14. Wurtzite GaAs/AlGaAs core-shell nanowires grown by molecular beam epitaxy.
    Zhou HL, Hoang TB, Dheeraj DL, van Helvoort AT, Liu L, Harmand JC, Fimland BO, Weman H.
    Nanotechnology; 2009 Oct 14; 20(41):415701. PubMed ID: 19755725
    [Abstract] [Full Text] [Related]

  • 15. Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures.
    Shi S, Zhang Z, Lu Z, Shu H, Chen P, Li N, Zou J, Lu W.
    Nanoscale Res Lett; 2015 Oct 14; 10():108. PubMed ID: 25852403
    [Abstract] [Full Text] [Related]

  • 16. InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch.
    Caroff P, Messing ME, Mattias Borg B, Dick KA, Deppert K, Wernersson LE.
    Nanotechnology; 2009 Dec 09; 20(49):495606. PubMed ID: 19904026
    [Abstract] [Full Text] [Related]

  • 17. Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy.
    Wang CY, Hong YC, Ko ZJ, Su YW, Huang JH.
    Nanoscale Res Lett; 2017 Dec 09; 12(1):290. PubMed ID: 28438011
    [Abstract] [Full Text] [Related]

  • 18. Bending and reverse bending during the fabrication of novel GaAs/(In,Ga)As/GaAs core-shell nanowires monitored byin situx-ray diffraction.
    Al Hassan A, AlHumaidi M, Kalt J, Schneider R, Müller E, Anjum T, Khadiev A, Novikov DV, Pietsch U, Baumbach T.
    Nanotechnology; 2024 May 01; 35(29):. PubMed ID: 38631325
    [Abstract] [Full Text] [Related]

  • 19. Molecular beam epitaxy growth of GaAs/InAs core-shell nanowires and fabrication of InAs nanotubes.
    Rieger T, Luysberg M, Schäpers T, Grützmacher D, Lepsa MI.
    Nano Lett; 2012 Nov 14; 12(11):5559-64. PubMed ID: 23030380
    [Abstract] [Full Text] [Related]

  • 20. A story told by a single nanowire: optical properties of wurtzite GaAs.
    Ahtapodov L, Todorovic J, Olk P, Mjåland T, Slåttnes P, Dheeraj DL, van Helvoort AT, Fimland BO, Weman H.
    Nano Lett; 2012 Dec 12; 12(12):6090-5. PubMed ID: 23131181
    [Abstract] [Full Text] [Related]

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