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Journal Abstract Search

344 related items for PubMed ID: 29154533

  • 1. Voltage-Assisted Magnetic Switching in MgO/CoFeB-Based Magnetic Tunnel Junctions by Way of Interface Reconstruction.
    Ko J, Hong J.
    ACS Appl Mater Interfaces; 2017 Dec 06; 9(48):42296-42301. PubMed ID: 29154533
    [Abstract] [Full Text] [Related]

  • 2. A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction.
    Ikeda S, Miura K, Yamamoto H, Mizunuma K, Gan HD, Endo M, Kanai S, Hayakawa J, Matsukura F, Ohno H.
    Nat Mater; 2010 Sep 06; 9(9):721-4. PubMed ID: 20622862
    [Abstract] [Full Text] [Related]

  • 3. Electric-field-assisted switching in magnetic tunnel junctions.
    Wang WG, Li M, Hageman S, Chien CL.
    Nat Mater; 2011 Nov 13; 11(1):64-8. PubMed ID: 22081084
    [Abstract] [Full Text] [Related]

  • 4. Voltage control of magnetic anisotropy in epitaxial Ru/Co2FeAl/MgO heterostructures.
    Wen Z, Sukegawa H, Seki T, Kubota T, Takanashi K, Mitani S.
    Sci Rep; 2017 Mar 23; 7():45026. PubMed ID: 28332569
    [Abstract] [Full Text] [Related]

  • 5. Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control.
    Liu H, Wang R, Guo P, Wen Z, Feng J, Wei H, Han X, Ji Y, Zhang S.
    Sci Rep; 2015 Dec 14; 5():18269. PubMed ID: 26658213
    [Abstract] [Full Text] [Related]

  • 6. Voltage-Controlled Antiferromagnetism in Magnetic Tunnel Junctions.
    Xu M, Li M, Khanal P, Habiboglu A, Insana B, Xiong Y, Peterson T, Myers JC, Ortega D, Qu H, Chien CL, Zhang W, Wang JP, Wang WG.
    Phys Rev Lett; 2020 May 08; 124(18):187701. PubMed ID: 32441982
    [Abstract] [Full Text] [Related]

  • 7. Spin reorientation transition in CoFeB/MgO/CoFeB tunnel junction enabled by ultrafast laser-induced suppression of perpendicular magnetic anisotropy.
    Shelukhin LA, Gareev RR, Zbarsky V, Walowski J, Münzenberg M, Pertsev NA, Kalashnikova AM.
    Nanoscale; 2022 Jun 09; 14(22):8153-8162. PubMed ID: 35621055
    [Abstract] [Full Text] [Related]

  • 8. Voltage-induced magnetization dynamics in CoFeB/MgO/CoFeB magnetic tunnel junctions.
    Miura K, Yabuuchi S, Yamada M, Ichimura M, Rana B, Ogawa S, Takahashi H, Fukuma Y, Otani Y.
    Sci Rep; 2017 Feb 17; 7():42511. PubMed ID: 28209976
    [Abstract] [Full Text] [Related]

  • 9. Ultrathin perpendicular magnetic anisotropy CoFeB free layers for highly efficient, high speed writing in spin-transfer-torque magnetic random access memory.
    Iwata-Harms JM, Jan G, Serrano-Guisan S, Thomas L, Liu H, Zhu J, Lee YJ, Le S, Tong RY, Patel S, Sundar V, Shen D, Yang Y, He R, Haq J, Teng Z, Lam V, Liu P, Wang YJ, Zhong T, Fukuzawa H, Wang PK.
    Sci Rep; 2019 Dec 19; 9(1):19407. PubMed ID: 31857596
    [Abstract] [Full Text] [Related]

  • 10. Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance.
    Wang M, Cai W, Cao K, Zhou J, Wrona J, Peng S, Yang H, Wei J, Kang W, Zhang Y, Langer J, Ocker B, Fert A, Zhao W.
    Nat Commun; 2018 Feb 14; 9(1):671. PubMed ID: 29445186
    [Abstract] [Full Text] [Related]

  • 11. Origin of easy magnetization switching in magnetic tunnel junctions with voltage-controlled interfacial anisotropy.
    Pertsev NA.
    Sci Rep; 2013 Sep 25; 3():2757. PubMed ID: 24067783
    [Abstract] [Full Text] [Related]

  • 12. Understanding stability diagram of perpendicular magnetic tunnel junctions.
    Skowroński W, Czapkiewicz M, Ziętek S, Chęciński J, Frankowski M, Rzeszut P, Wrona J.
    Sci Rep; 2017 Aug 31; 7(1):10172. PubMed ID: 28860571
    [Abstract] [Full Text] [Related]

  • 13. Ru Catalyst-Induced Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta/MgO Multilayered Films.
    Liu Y, Zhang J, Wang S, Jiang S, Liu Q, Li X, Wu Z, Yu G.
    ACS Appl Mater Interfaces; 2015 Dec 09; 7(48):26643-8. PubMed ID: 26565747
    [Abstract] [Full Text] [Related]

  • 14. The effect of insertion layer on the perpendicular magnetic anisotropy and its electric-field-induced change at Fe/MgO interface: a first-principles investigation.
    Su Y, Zhang J, Hong J, You L.
    J Phys Condens Matter; 2020 Aug 17; 32(45):. PubMed ID: 32679571
    [Abstract] [Full Text] [Related]

  • 15. Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions.
    Watanabe K, Jinnai B, Fukami S, Sato H, Ohno H.
    Nat Commun; 2018 Feb 14; 9(1):663. PubMed ID: 29445169
    [Abstract] [Full Text] [Related]

  • 16. Thermally robust Mo/CoFeB/MgO trilayers with strong perpendicular magnetic anisotropy.
    Liu T, Zhang Y, Cai JW, Pan HY.
    Sci Rep; 2014 Jul 31; 4():5895. PubMed ID: 25081387
    [Abstract] [Full Text] [Related]

  • 17. Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers.
    Zhou B, Khanal P, Benally OJ, Lyu D, Gopman DB, Enriquez A, Habiboglu A, Warrilow K, Wang JP, Wang WG.
    Sci Rep; 2023 Mar 01; 13(1):3454. PubMed ID: 36859656
    [Abstract] [Full Text] [Related]

  • 18. Magnetic Tunnel Junctions with a Nearly Zero Moment Manganese Nanolayer with Perpendicular Magnetic Anisotropy.
    Suzuki KZ, Kimura S, Kubota H, Mizukami S.
    ACS Appl Mater Interfaces; 2018 Dec 19; 10(50):43305-43310. PubMed ID: 30520620
    [Abstract] [Full Text] [Related]

  • 19. Predictive Materials Design of Magnetic Random-Access Memory Based on Nanoscale Atomic Structure and Element Distribution.
    Li X, Sasaki T, Grezes C, Wu D, Wong K, Bi C, Ong PV, Ebrahimi F, Yu G, Kioussis N, Wang W, Ohkubo T, Khalili Amiri P, Wang KL.
    Nano Lett; 2019 Dec 11; 19(12):8621-8629. PubMed ID: 31697502
    [Abstract] [Full Text] [Related]

  • 20. Enhanced electric control of magnetic anisotropy via high thermal resistance capping layers in magnetic tunnel junctions.
    Okuno R, Yamada Y, Goto M, Mizuno T, Yamane T, Degawa N, Suzuki T, Shimura A, Aoki S, Urabe J, Hara S, Nomura H, Suzuki Y.
    J Phys Condens Matter; 2020 Jun 19; 32(38):. PubMed ID: 32574153
    [Abstract] [Full Text] [Related]

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