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Journal Abstract Search

148 related items for PubMed ID: 29206466

  • 1. Doping of Self-Catalyzed Nanowires under the Influence of Droplets.
    Zhang Y, Sun Z, Sanchez AM, Ramsteiner M, Aagesen M, Wu J, Kim D, Jurczak P, Huo S, Lauhon LJ, Liu H.
    Nano Lett; 2018 Jan 10; 18(1):81-87. PubMed ID: 29206466
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  • 5. Growth of Pure Zinc-Blende GaAs(P) Core-Shell Nanowires with Highly Regular Morphology.
    Zhang Y, Fonseka HA, Aagesen M, Gott JA, Sanchez AM, Wu J, Kim D, Jurczak P, Huo S, Liu H.
    Nano Lett; 2017 Aug 09; 17(8):4946-4950. PubMed ID: 28758401
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  • 7. Influence of Droplet Size on the Growth of Self-Catalyzed Ternary GaAsP Nanowires.
    Zhang Y, Sanchez AM, Sun Y, Wu J, Aagesen M, Huo S, Kim D, Jurczak P, Xu X, Liu H.
    Nano Lett; 2016 Feb 10; 16(2):1237-43. PubMed ID: 26708002
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  • 8. A Novel Growth Method To Improve the Quality of GaAs Nanowires Grown by Ga-Assisted Chemical Beam Epitaxy.
    García Núñez C, Braña AF, López N, García BJ.
    Nano Lett; 2018 Jun 13; 18(6):3608-3615. PubMed ID: 29739187
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  • 9. Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: ab initio simulations supporting center nucleation.
    André Y, Lekhal K, Hoggan P, Avit G, Cadiz F, Rowe A, Paget D, Petit E, Leroux C, Trassoudaine A, Ramdani MR, Monier G, Colas D, Ajib R, Castelluci D, Gil E.
    J Chem Phys; 2014 May 21; 140(19):194706. PubMed ID: 24852556
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  • 10. Self-catalyzed GaAsP nanowires grown on silicon substrates by solid-source molecular beam epitaxy.
    Zhang Y, Aagesen M, Holm JV, Jørgensen HI, Wu J, Liu H.
    Nano Lett; 2013 Aug 14; 13(8):3897-902. PubMed ID: 23899047
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  • 12. Synthesis and structural-optical properties of Ga-doped ZnO nanowires by hot-walled pulsed laser deposition method.
    Kim K, Lee DY, Park DH, Kim S, Lee SY.
    J Nanosci Nanotechnol; 2012 May 14; 12(5):4173-6. PubMed ID: 22852366
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  • 14. Growth of long III-As NWs by hydride vapor phase epitaxy.
    Gil E, Andre Y.
    Nanotechnology; 2021 Apr 16; 32(16):162002. PubMed ID: 33434903
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  • 18. High verticality vapor-liquid-solid growth of GaAs0.99Bi0.01 nanowires using Ga-Bi assisted catalytic droplets.
    Himwas C, Yordsri V, Thanachayanont C, Chomdech S, Pumee W, Panyakeow S, Kanjanachuchai S.
    Nanoscale Adv; 2024 Jan 30; 6(3):846-854. PubMed ID: 38298583
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  • 19. Enhancing the incorporation of Sn in vapor-liquid-solid GeSn nanowires by modulation of the droplet composition.
    Zeghouane M, Hijazi H, Bassani F, Lefevre G, Martinez E, Luciani T, Gentile P, Dubrovskii VG, Salem B.
    Nanotechnology; 2022 Mar 25; 33(24):. PubMed ID: 35263731
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  • 20. Identification of an intrinsic source of doping inhomogeneity in vapor-liquid-solid-grown nanowires.
    Connell JG, Yoon K, Perea DE, Schwalbach EJ, Voorhees PW, Lauhon LJ.
    Nano Lett; 2013 Jan 09; 13(1):199-206. PubMed ID: 23237496
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