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Journal Abstract Search

208 related items for PubMed ID: 29350729

  • 1. In situ mechanical resonance behaviour of pristine and defective zinc blende GaAs nanowires.
    Pickering E, Bo A, Zhan H, Liao X, Tan HH, Gu Y.
    Nanoscale; 2018 Feb 01; 10(5):2588-2595. PubMed ID: 29350729
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  • 2. Effect of a High Density of Stacking Faults on the Young's Modulus of GaAs Nanowires.
    Chen Y, Burgess T, An X, Mai YW, Tan HH, Zou J, Ringer SP, Jagadish C, Liao X.
    Nano Lett; 2016 Mar 09; 16(3):1911-6. PubMed ID: 26885570
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  • 3. Effect of crystal structure on the Young's modulus of GaP nanowires.
    Alekseev PA, Borodin BR, Geydt P, Khayrudinov V, Bespalova K, Kirilenko DA, Reznik RR, Nashchekin AV, Haggrén T, Lähderanta E, Cirlin GE, Lipsanen H, Dunaevskiy MS.
    Nanotechnology; 2021 Jul 02; 32(38):. PubMed ID: 34116523
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  • 4. Enhanced thermoelectric figure of merit in thin GaAs nanowires.
    Zou X, Chen X, Huang H, Xu Y, Duan W.
    Nanoscale; 2015 May 21; 7(19):8776-81. PubMed ID: 25905892
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  • 5. Role of surface oxidation on the size dependent mechanical properties of nickel nanowires: a ReaxFF molecular dynamics study.
    Aral G, Islam MM, van Duin ACT.
    Phys Chem Chem Phys; 2017 Dec 20; 20(1):284-298. PubMed ID: 29205239
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  • 11. Growth of Pure Zinc-Blende GaAs(P) Core-Shell Nanowires with Highly Regular Morphology.
    Zhang Y, Fonseka HA, Aagesen M, Gott JA, Sanchez AM, Wu J, Kim D, Jurczak P, Huo S, Liu H.
    Nano Lett; 2017 Aug 09; 17(8):4946-4950. PubMed ID: 28758401
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  • 12. Surface effects on the atomic and electronic structure of unpassivated GaAs nanowires.
    Rosini M, Magri R.
    ACS Nano; 2010 Oct 26; 4(10):6021-31. PubMed ID: 20853868
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  • 13. Polytypism in GaAs/GaNAs core-shell nanowires.
    Yukimune M, Fujiwara R, Mita T, Ishikawa F.
    Nanotechnology; 2020 Dec 11; 31(50):505608. PubMed ID: 32937605
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  • 14. Effect of V/III ratio on the structural and optical properties of self-catalysed GaAs nanowires.
    Ahtapodov L, Munshi AM, Nilsen JS, Reinertsen JF, Dheeraj DL, Fimland BO, van Helvoort AT, Weman H.
    Nanotechnology; 2016 Nov 04; 27(44):445711. PubMed ID: 27688265
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  • 16. Controlling Bi-Provoked Nanostructure Formation in GaAs/GaAsBi Core-Shell Nanowires.
    Matsuda T, Takada K, Yano K, Tsutsumi R, Yoshikawa K, Shimomura S, Shimizu Y, Nagashima K, Yanagida T, Ishikawa F.
    Nano Lett; 2019 Dec 11; 19(12):8510-8518. PubMed ID: 31525986
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  • 17. Two-step fabrication of self-catalyzed Ga-based semiconductor nanowires on Si by molecular-beam epitaxy.
    Yu X, Li L, Wang H, Xiao J, Shen C, Pan D, Zhao J.
    Nanoscale; 2016 May 19; 8(20):10615-21. PubMed ID: 27194599
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  • 18. Tunable Mechanical Property and Structural Transition of Silicon Nitride Nanowires Induced by Focused Ion Beam Irradiation.
    Wei B, Deng Q, Ji Y, Wang Z, Han X.
    ACS Appl Mater Interfaces; 2020 Jul 15; 12(28):32175-32181. PubMed ID: 32551486
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