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PUBMED FOR HANDHELDS

Journal Abstract Search


238 related items for PubMed ID: 29467459

  • 21. Spin transport in graphene/transition metal dichalcogenide heterostructures.
    Garcia JH, Vila M, Cummings AW, Roche S.
    Chem Soc Rev; 2018 May 08; 47(9):3359-3379. PubMed ID: 29696280
    [Abstract] [Full Text] [Related]

  • 22. A two-dimensional spin field-effect switch.
    Yan W, Txoperena O, Llopis R, Dery H, Hueso LE, Casanova F.
    Nat Commun; 2016 Nov 11; 7():13372. PubMed ID: 27834365
    [Abstract] [Full Text] [Related]

  • 23. Zero-field spin splitting in a two-dimensional electron gas with the spin-orbit interaction revisited.
    Islam SK, Ghosh TK.
    J Phys Condens Matter; 2012 Jan 25; 24(3):035302. PubMed ID: 22179301
    [Abstract] [Full Text] [Related]

  • 24. Spin-Orbit Coupling Induced Gap in Graphene on Pt(111) with Intercalated Pb Monolayer.
    Klimovskikh II, Otrokov MM, Voroshnin VY, Sostina D, Petaccia L, Di Santo G, Thakur S, Chulkov EV, Shikin AM.
    ACS Nano; 2017 Jan 24; 11(1):368-374. PubMed ID: 28005333
    [Abstract] [Full Text] [Related]

  • 25. Spin Hall and spin Nernst effects due to intrinsic spin-orbit coupling in monolayer and bilayer graphene.
    Dyrdał A, Barnaś J.
    J Nanosci Nanotechnol; 2012 Dec 24; 12(12):9051-7. PubMed ID: 23447957
    [Abstract] [Full Text] [Related]

  • 26. Observation of the Spin-Orbit Gap in Bilayer Graphene by One-Dimensional Ballistic Transport.
    Banszerus L, Frohn B, Fabian T, Somanchi S, Epping A, Müller M, Neumaier D, Watanabe K, Taniguchi T, Libisch F, Beschoten B, Hassler F, Stampfer C.
    Phys Rev Lett; 2020 May 01; 124(17):177701. PubMed ID: 32412294
    [Abstract] [Full Text] [Related]

  • 27. Strong Modulation of Spin Currents in Bilayer Graphene by Static and Fluctuating Proximity Exchange Fields.
    Singh S, Katoch J, Zhu T, Meng KY, Liu T, Brangham JT, Yang F, Flatté ME, Kawakami RK.
    Phys Rev Lett; 2017 May 05; 118(18):187201. PubMed ID: 28524685
    [Abstract] [Full Text] [Related]

  • 28. Stabilizing the Inverted Phase of a WSe2/BLG/WSe2 Heterostructure via Hydrostatic Pressure.
    Kedves M, Szentpéteri B, Márffy A, Tóvári E, Papadopoulos N, Rout PK, Watanabe K, Taniguchi T, Goswami S, Csonka S, Makk P.
    Nano Lett; 2023 Oct 25; 23(20):9508-9514. PubMed ID: 37844301
    [Abstract] [Full Text] [Related]

  • 29. Proximity Effects in Bilayer Graphene on Monolayer WSe_{2}: Field-Effect Spin Valley Locking, Spin-Orbit Valve, and Spin Transistor.
    Gmitra M, Fabian J.
    Phys Rev Lett; 2017 Oct 06; 119(14):146401. PubMed ID: 29053300
    [Abstract] [Full Text] [Related]

  • 30. Electrical gate control of spin current in van der Waals heterostructures at room temperature.
    Dankert A, Dash SP.
    Nat Commun; 2017 Jul 05; 8():16093. PubMed ID: 28677673
    [Abstract] [Full Text] [Related]

  • 31. Moiré Engineering of Spin-Orbit Torque by Twisted WS2 Homobilayers.
    Liang X, Lv P, Xiong Y, Chen X, Fu D, Feng Y, Wang X, Chen X, Xu G, Kan E, Xu F, Zeng H.
    Adv Mater; 2024 Jul 05; 36(30):e2313059. PubMed ID: 38871341
    [Abstract] [Full Text] [Related]

  • 32.
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  • 33. Effect of Distance on Photoluminescence Quenching and Proximity-Induced Spin-Orbit Coupling in Graphene/WSe2 Heterostructures.
    Yang B, Molina E, Kim J, Barroso D, Lohmann M, Liu Y, Xu Y, Wu R, Bartels L, Watanabe K, Taniguchi T, Shi J.
    Nano Lett; 2018 Jun 13; 18(6):3580-3585. PubMed ID: 29852737
    [Abstract] [Full Text] [Related]

  • 34. Tunable 1/f Noise in CVD Bernal-Stacked Bilayer Graphene Transistors.
    Tian M, Hu Q, Gu C, Xiong X, Zhang Z, Li X, Wu Y.
    ACS Appl Mater Interfaces; 2020 Apr 15; 12(15):17686-17690. PubMed ID: 32189495
    [Abstract] [Full Text] [Related]

  • 35.
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  • 36. Magnetotransport across the metal-graphene hybrid interface and its modulation by gate voltage.
    Chen JJ, Ke X, Van Tendeloo G, Meng J, Zhou YB, Liao ZM, Yu DP.
    Nanoscale; 2015 Mar 12; 7(12):5516-24. PubMed ID: 25735487
    [Abstract] [Full Text] [Related]

  • 37. Gate-tunable large spin polarization in a few-layer black phosphorus-based spintronic device.
    Zhang L, Chen J, Zheng X, Wang B, Zhang L, Xiao L, Jia S.
    Nanoscale; 2019 Jun 20; 11(24):11872-11878. PubMed ID: 31184683
    [Abstract] [Full Text] [Related]

  • 38. One-dimensional weak antilocalization due to the berry phase in HgTe wires.
    Mühlbauer M, Budewitz A, Büttner B, Tkachov G, Hankiewicz EM, Brüne C, Buhmann H, Molenkamp LW.
    Phys Rev Lett; 2014 Apr 11; 112(14):146803. PubMed ID: 24766002
    [Abstract] [Full Text] [Related]

  • 39. Strong spin-orbit interaction and magnetotransport in semiconductor Bi2O2Se nanoplates.
    Meng M, Huang S, Tan C, Wu J, Jing Y, Peng H, Xu HQ.
    Nanoscale; 2018 Feb 08; 10(6):2704-2710. PubMed ID: 29360119
    [Abstract] [Full Text] [Related]

  • 40. Giant magnetoresistance control and nontrivial metallic state manipulation in a transition-metal dichalcogenide spin-valve using a gate voltage.
    Bai C, Yang Y, Bai L.
    J Phys Condens Matter; 2018 Dec 12; 30(49):495801. PubMed ID: 30431019
    [Abstract] [Full Text] [Related]


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