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Journal Abstract Search

286 related items for PubMed ID: 29481035

  • 1. Sulfur-Doped Black Phosphorus Field-Effect Transistors with Enhanced Stability.
    Lv W, Yang B, Wang B, Wan W, Ge Y, Yang R, Hao C, Xiang J, Zhang B, Zeng Z, Liu Z.
    ACS Appl Mater Interfaces; 2018 Mar 21; 10(11):9663-9668. PubMed ID: 29481035
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  • 2. Realizing Long-Term Stability and Thickness Control of Black Phosphorus by Ambient Thermal Treatment.
    Jeong MH, Kwak DH, Ra HS, Lee AY, Lee JS.
    ACS Appl Mater Interfaces; 2018 Jun 06; 10(22):19069-19075. PubMed ID: 29771108
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  • 3. Enhanced stability of black phosphorus field-effect transistors with SiO₂ passivation.
    Wan B, Yang B, Wang Y, Zhang J, Zeng Z, Liu Z, Wang W.
    Nanotechnology; 2015 Oct 30; 26(43):435702. PubMed ID: 26436439
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  • 7. Metal-Ion-Modified Black Phosphorus with Enhanced Stability and Transistor Performance.
    Guo Z, Chen S, Wang Z, Yang Z, Liu F, Xu Y, Wang J, Yi Y, Zhang H, Liao L, Chu PK, Yu XF.
    Adv Mater; 2017 Nov 30; 29(42):. PubMed ID: 28960515
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  • 9. Plasma-Treated Thickness-Controlled Two-Dimensional Black Phosphorus and Its Electronic Transport Properties.
    Jia J, Jang SK, Lai S, Xu J, Choi YJ, Park JH, Lee S.
    ACS Nano; 2015 Sep 22; 9(9):8729-36. PubMed ID: 26301840
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  • 12. Solution-Based Property Tuning of Black Phosphorus.
    Fan S, Shen W, Liu J, Hei H, Hu R, Hu C, Zhang D, Hu X, Sun D, Chen JH, Ji W, Liu J.
    ACS Appl Mater Interfaces; 2018 Nov 21; 10(46):39890-39897. PubMed ID: 30398833
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  • 15. Black Phosphorus Field-Effect Transistors with Work Function Tunable Contacts.
    Ma Y, Shen C, Zhang A, Chen L, Liu Y, Chen J, Liu Q, Li Z, Amer MR, Nilges T, Abbas AN, Zhou C.
    ACS Nano; 2017 Jul 25; 11(7):7126-7133. PubMed ID: 28653827
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  • 16. Germanium-doped Metallic Ohmic Contacts in Black Phosphorus Field-Effect Transistors with Ultra-low Contact Resistance.
    Chang HM, Charnas A, Lin YM, Ye PD, Wu CI, Wu CH.
    Sci Rep; 2017 Dec 04; 7(1):16857. PubMed ID: 29203831
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  • 17. Recovery of the Pristine Surface of Black Phosphorus by Water Rinsing and Its Device Application.
    Kim S, Lee JY, Lee CH, Lee GH, Kim J.
    ACS Appl Mater Interfaces; 2017 Jun 28; 9(25):21382-21389. PubMed ID: 28569058
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  • 18. In Situ Cleaning and Fluorination of Black Phosphorus for Enhanced Performance of Transistors with High Stability.
    Hsieh YL, Su WH, Huang CC, Su CY.
    ACS Appl Mater Interfaces; 2020 Aug 19; 12(33):37375-37383. PubMed ID: 32700524
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  • 19. Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering.
    Li X, Wu J, Ye Y, Li S, Li T, Xiong X, Xu X, Gao T, Xie X, Wu Y.
    ACS Appl Mater Interfaces; 2019 Jan 09; 11(1):1587-1594. PubMed ID: 30540166
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  • 20. Passivated ambipolar black phosphorus transistors.
    Yue D, Lee D, Jang YD, Choi MS, Nam HJ, Jung DY, Yoo WJ.
    Nanoscale; 2016 Jul 07; 8(25):12773-9. PubMed ID: 27283027
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