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Journal Abstract Search

303 related items for PubMed ID: 29767500

  • 1. Enhanced Performance of Field-Effect Transistors Based on Black Phosphorus Channels Reduced by Galvanic Corrosion of Al Overlayers.
    Lee S, Yoon C, Lee JH, Kim YS, Lee MJ, Kim W, Baik J, Jia Q, Park BH.
    ACS Appl Mater Interfaces; 2018 Jun 06; 10(22):18895-18901. PubMed ID: 29767500
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  • 2. Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers.
    Ra HS, Lee AY, Kwak DH, Jeong MH, Lee JS.
    ACS Appl Mater Interfaces; 2018 Jan 10; 10(1):925-932. PubMed ID: 29256593
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  • 3. Interface engineering for a stable chemical structure of oxidized-black phosphorus via self-reduction in AlOx atomic layer deposition.
    Kim DK, Chae J, Hong SB, Park H, Jeong KS, Park HW, Kwon SR, Chung KB, Cho MH.
    Nanoscale; 2018 Dec 13; 10(48):22896-22907. PubMed ID: 30488924
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  • 4. In Situ Cleaning and Fluorination of Black Phosphorus for Enhanced Performance of Transistors with High Stability.
    Hsieh YL, Su WH, Huang CC, Su CY.
    ACS Appl Mater Interfaces; 2020 Aug 19; 12(33):37375-37383. PubMed ID: 32700524
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  • 12. Carrier tuning of 2D electron gas in field-effect devices based on Al2O3/ZnO heterostructures.
    Zhu X, Zhang T, He Y, Liu Y, Zhu H.
    Nanoscale; 2023 Jul 20; 15(28):12071-12077. PubMed ID: 37409568
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  • 13. High-Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions.
    Liu B, Ma Y, Zhang A, Chen L, Abbas AN, Liu Y, Shen C, Wan H, Zhou C.
    ACS Nano; 2016 May 24; 10(5):5153-60. PubMed ID: 27159780
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  • 14. Black Phosphorus Field-Effect Transistors with Work Function Tunable Contacts.
    Ma Y, Shen C, Zhang A, Chen L, Liu Y, Chen J, Liu Q, Li Z, Amer MR, Nilges T, Abbas AN, Zhou C.
    ACS Nano; 2017 Jul 25; 11(7):7126-7133. PubMed ID: 28653827
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  • 15. Recovery of the Pristine Surface of Black Phosphorus by Water Rinsing and Its Device Application.
    Kim S, Lee JY, Lee CH, Lee GH, Kim J.
    ACS Appl Mater Interfaces; 2017 Jun 28; 9(25):21382-21389. PubMed ID: 28569058
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  • 16. Effective passivation of exfoliated black phosphorus transistors against ambient degradation.
    Wood JD, Wells SA, Jariwala D, Chen KS, Cho E, Sangwan VK, Liu X, Lauhon LJ, Marks TJ, Hersam MC.
    Nano Lett; 2014 Dec 10; 14(12):6964-70. PubMed ID: 25380142
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  • 18. A Nonchlorinated Solvent-Processable Fluorinated Planar Conjugated Polymer for Flexible Field-Effect Transistors.
    Lee M, Kim MJ, Ro S, Choi S, Jin SM, Nguyen HD, Yang J, Lee KK, Lim DU, Lee E, Kang MS, Choi JH, Cho JH, Kim B.
    ACS Appl Mater Interfaces; 2017 Aug 30; 9(34):28817-28827. PubMed ID: 28783949
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