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Journal Abstract Search

310 related items for PubMed ID: 29972166

  • 1. Effects of a Nb nanopin electrode on the resistive random-access memory switching characteristics of NiO thin films.
    Ahn Y, Shin HW, Lee TH, Kim WH, Son JY.
    Nanoscale; 2018 Jul 19; 10(28):13443-13448. PubMed ID: 29972166
    [Abstract] [Full Text] [Related]

  • 2. NiO resistive random access memory nanocapacitor array on graphene.
    Son JY, Shin YH, Kim H, Jang HM.
    ACS Nano; 2010 May 25; 4(5):2655-8. PubMed ID: 20438101
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  • 3. Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITOX:SiO2 Thin Films on Resistive Random Access Memory Devices.
    Chen KH, Cheng CM, Wang NF, Kao MC.
    Nanomaterials (Basel); 2023 Jul 26; 13(15):. PubMed ID: 37570498
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  • 4. Kelvin probe force microscopy for conducting nanobits of NiO thin films.
    Son JY, Shin YH, Kim H, Cho JH, Jang H.
    Nanotechnology; 2010 May 28; 21(21):215704. PubMed ID: 20431198
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  • 6. Epitaxial Brownmillerite Oxide Thin Films for Reliable Switching Memory.
    Acharya SK, Nallagatla RV, Togibasa O, Lee BW, Liu C, Jung CU, Park BH, Park JY, Cho Y, Kim DW, Jo J, Kwon DH, Kim M, Hwang CS, Chae SC.
    ACS Appl Mater Interfaces; 2016 Mar 28; 8(12):7902-11. PubMed ID: 26955744
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  • 7. Analysis of the Bipolar Resistive Switching Behavior of a Biocompatible Glucose Film for Resistive Random Access Memory.
    Park SP, Tak YJ, Kim HJ, Lee JH, Yoo H, Kim HJ.
    Adv Mater; 2018 Jun 28; 30(26):e1800722. PubMed ID: 29761552
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  • 9. Nonvolatile memory devices prepared from sol-gel derived niobium pentoxide films.
    Baek H, Lee C, Choi J, Cho J.
    Langmuir; 2013 Jan 08; 29(1):380-6. PubMed ID: 23210494
    [Abstract] [Full Text] [Related]

  • 10. Resistive switching characteristics of ZnO nanowires.
    Yoo EJ, Shin IK, Yoon TS, Choi YJ, Kang CJ.
    J Nanosci Nanotechnol; 2014 Dec 08; 14(12):9459-64. PubMed ID: 25971083
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  • 12. Tunneling of photon-generated carrier in the interface barrier induced resistive switching memory behaviour.
    Sun B, Guo T, Zhou G, Ranjan S, Hou W, Hou Y, Zhao Y.
    J Colloid Interface Sci; 2019 Oct 01; 553():682-687. PubMed ID: 31252184
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  • 15. Bipolar Switching Properties of the Transparent Indium Tin Oxide Thin Film Resistance Random Access Memories.
    Chen KH, Cheng CM, Chen ML, Pan YY.
    Nanomaterials (Basel); 2023 Feb 10; 13(4):. PubMed ID: 36839057
    [Abstract] [Full Text] [Related]

  • 16. Effects of Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory.
    Lee KJ, Wang LW, Chiang TK, Wang YH.
    Materials (Basel); 2015 Oct 26; 8(10):7191-7198. PubMed ID: 28793630
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