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Journal Abstract Search

551 related items for PubMed ID: 30001136

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  • 3. Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals.
    Sun Y, Zhou Z, Huang Z, Wu J, Zhou L, Cheng Y, Liu J, Zhu C, Yu M, Yu P, Zhu W, Liu Y, Zhou J, Liu B, Xie H, Cao Y, Li H, Wang X, Liu K, Wang X, Wang J, Wang L, Huang W.
    Adv Mater; 2019 Apr; 31(17):e1806562. PubMed ID: 30861234
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  • 6. Probing Evolution of Twist-Angle-Dependent Interlayer Excitons in MoSe2/WSe2 van der Waals Heterostructures.
    Nayak PK, Horbatenko Y, Ahn S, Kim G, Lee JU, Ma KY, Jang AR, Lim H, Kim D, Ryu S, Cheong H, Park N, Shin HS.
    ACS Nano; 2017 Apr 25; 11(4):4041-4050. PubMed ID: 28363013
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  • 7. Signatures of Electric Field and Layer Separation Effects on the Spin-Valley Physics of MoSe2/WSe2 Heterobilayers: From Energy Bands to Dipolar Excitons.
    Faria Junior PE, Fabian J.
    Nanomaterials (Basel); 2023 Mar 27; 13(7):. PubMed ID: 37049281
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  • 8. Ultrafast dynamics in van der Waals heterostructures.
    Jin C, Ma EY, Karni O, Regan EC, Wang F, Heinz TF.
    Nat Nanotechnol; 2018 Nov 27; 13(11):994-1003. PubMed ID: 30397296
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  • 10. Photoluminescence Enhancement by Band Alignment Engineering in MoS2/FePS3 van der Waals Heterostructures.
    Ramos M, Marques-Moros F, Esteras DL, Mañas-Valero S, Henríquez-Guerra E, Gadea M, Baldoví JJ, Canet-Ferrer J, Coronado E, Calvo MR.
    ACS Appl Mater Interfaces; 2022 Jul 15; 14(29):33482-90. PubMed ID: 35839147
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  • 11. Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures.
    Rivera P, Schaibley JR, Jones AM, Ross JS, Wu S, Aivazian G, Klement P, Seyler K, Clark G, Ghimire NJ, Yan J, Mandrus DG, Yao W, Xu X.
    Nat Commun; 2015 Feb 24; 6():6242. PubMed ID: 25708612
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  • 12. Stacking orders induced direct band gap in bilayer MoSe2-WSe2 lateral heterostructures.
    Hu X, Kou L, Sun L.
    Sci Rep; 2016 Aug 16; 6():31122. PubMed ID: 27528196
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  • 13. Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges.
    Duan X, Wang C, Pan A, Yu R, Duan X.
    Chem Soc Rev; 2015 Dec 21; 44(24):8859-76. PubMed ID: 26479493
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  • 15. Interlayer Exciton Optoelectronics in a 2D Heterostructure p-n Junction.
    Ross JS, Rivera P, Schaibley J, Lee-Wong E, Yu H, Taniguchi T, Watanabe K, Yan J, Mandrus D, Cobden D, Yao W, Xu X.
    Nano Lett; 2017 Feb 08; 17(2):638-643. PubMed ID: 28006106
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  • 17. Dual-gated MoS2/WSe2 van der Waals tunnel diodes and transistors.
    Roy T, Tosun M, Cao X, Fang H, Lien DH, Zhao P, Chen YZ, Chueh YL, Guo J, Javey A.
    ACS Nano; 2015 Feb 24; 9(2):2071-9. PubMed ID: 25598307
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  • 19. Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides.
    Fang H, Battaglia C, Carraro C, Nemsak S, Ozdol B, Kang JS, Bechtel HA, Desai SB, Kronast F, Unal AA, Conti G, Conlon C, Palsson GK, Martin MC, Minor AM, Fadley CS, Yablonovitch E, Maboudian R, Javey A.
    Proc Natl Acad Sci U S A; 2014 Apr 29; 111(17):6198-202. PubMed ID: 24733906
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  • 20. Hole Transport in Exfoliated Monolayer MoS2.
    Ponomarev E, Pásztor Á, Waelchli A, Scarfato A, Ubrig N, Renner C, Morpurgo AF.
    ACS Nano; 2018 Mar 27; 12(3):2669-2676. PubMed ID: 29481047
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