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Journal Abstract Search

169 related items for PubMed ID: 30276384

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  • 4. Controlling Native Oxidation of HfS2 for 2D Materials Based Flash Memory and Artificial Synapse.
    Jin T, Zheng Y, Gao J, Wang Y, Li E, Chen H, Pan X, Lin M, Chen W.
    ACS Appl Mater Interfaces; 2021 Mar 03; 13(8):10639-10649. PubMed ID: 33606512
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  • 5. Few-layer HfS2 transistors.
    Kanazawa T, Amemiya T, Ishikawa A, Upadhyaya V, Tsuruta K, Tanaka T, Miyamoto Y.
    Sci Rep; 2016 Mar 01; 6():22277. PubMed ID: 26926098
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  • 7. First-Principles Calculations of Two-Dimensional CdO/HfS2 Van der Waals Heterostructure: Direct Z-Scheme Photocatalytic Water Splitting.
    Zhang Q, Ren K, Zheng R, Huang Z, An Z, Cui Z.
    Front Chem; 2022 Mar 01; 10():879402. PubMed ID: 35464209
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  • 9. Toward High-Performance Top-Gate Ultrathin HfS2 Field-Effect Transistors by Interface Engineering.
    Xu K, Huang Y, Chen B, Xia Y, Lei W, Wang Z, Wang Q, Wang F, Yin L, He J.
    Small; 2016 Jun 01; 12(23):3106-11. PubMed ID: 27120487
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  • 10. Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric.
    Xia P, Feng X, Ng RJ, Wang S, Chi D, Li C, He Z, Liu X, Ang KW.
    Sci Rep; 2017 Jan 13; 7():40669. PubMed ID: 28084434
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  • 12. Ultralow Defect Density at Sub-0.5 nm HfO2/SiGe Interfaces via Selective Oxygen Scavenging.
    Kavrik MS, Thomson E, Chagarov E, Tang K, Ueda ST, Hou V, Aoki T, Kim M, Fruhberger B, Taur Y, McIntyre PC, Kummel AC.
    ACS Appl Mater Interfaces; 2018 Sep 12; 10(36):30794-30802. PubMed ID: 30073827
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  • 13. Laser Irradiation Effect on the p-GaSe/n-HfS2 PN-Heterojunction for High-Performance Phototransistors.
    Muhammad Z, Islam R, Wang Y, Autieri C, Lv Z, Singh B, Vallobra P, Zhang Y, Zhu L, Zhao W.
    ACS Appl Mater Interfaces; 2022 Aug 10; 14(31):35927-35939. PubMed ID: 35867860
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  • 14. Outstanding stretchability and thickness-dependent mechanical properties of 2D HfS2, HfSe2, and hafnium oxide.
    Jahn YM, Ya'akobovitz A.
    Nanoscale; 2021 Nov 18; 13(44):18458-18466. PubMed ID: 34608919
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  • 15. The growth mechanism and intriguing optical and electronic properties of few-layered HfS2.
    Singh J, Shao JH, Chen GT, Wu HS, Tsai ML.
    Nanoscale Adv; 2022 Dec 20; 5(1):171-178. PubMed ID: 36605793
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  • 16. Van der Waals Epitaxial Growth of Atomic Layered HfS2 Crystals for Ultrasensitive Near-Infrared Phototransistors.
    Fu L, Wang F, Wu B, Wu N, Huang W, Wang H, Jin C, Zhuang L, He J, Fu L, Liu Y.
    Adv Mater; 2017 Aug 20; 29(32):. PubMed ID: 28639401
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  • 17. Controlling the electronic and optical properties of HfS2 mono-layers via lanthanide substitutional doping: a DFT+U study.
    Obodo KO, Gebreyesus G, Ouma CNM, Obodo JT, Ezeonu SO, Rai DP, Bouhafs B.
    RSC Adv; 2020 Apr 21; 10(27):15670-15676. PubMed ID: 35493683
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  • 18. Large-Area Synthesis of Layered HfS2(1- x )Se2 x Alloys with Fully Tunable Chemical Compositions and Bandgaps.
    Wang D, Zhang X, Guo G, Gao S, Li X, Meng J, Yin Z, Liu H, Gao M, Cheng L, You J, Wang R.
    Adv Mater; 2018 Nov 21; 30(44):e1803285. PubMed ID: 30589474
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  • 19. Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride.
    Wang D, Lu Y, Meng J, Zhang X, Yin Z, Gao M, Wang Y, Cheng L, You J, Zhang J.
    Nanoscale; 2019 May 16; 11(19):9310-9318. PubMed ID: 31066419
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  • 20. Impact of Metal Contacts on the Performance of Multilayer HfS2 Field-Effect Transistors.
    Nie XR, Sun BQ, Zhu H, Zhang M, Zhao DH, Chen L, Sun QQ, Zhang DW.
    ACS Appl Mater Interfaces; 2017 Aug 16; 9(32):26996-27003. PubMed ID: 28730801
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