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Journal Abstract Search

334 related items for PubMed ID: 30281281

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  • 3. High optical quality single crystal phase wurtzite and zincblende InP nanowires.
    Vu TT, Zehender T, Verheijen MA, Plissard SR, Immink GW, Haverkort JE, Bakkers EP.
    Nanotechnology; 2013 Mar 22; 24(11):115705. PubMed ID: 23455417
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  • 4. Understanding Shape Evolution and Phase Transition in InP Nanostructures Grown by Selective Area Epitaxy.
    Wang N, Wong WW, Yuan X, Li L, Jagadish C, Tan HH.
    Small; 2021 May 22; 17(21):e2100263. PubMed ID: 33856732
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  • 6. Hole and Electron Effective Masses in Single InP Nanowires with a Wurtzite-Zincblende Homojunction.
    Tedeschi D, Fonseka HA, Blundo E, Granados Del Águila A, Guo Y, Tan HH, Christianen PCM, Jagadish C, Polimeni A, De Luca M.
    ACS Nano; 2020 Sep 22; 14(9):11613-11622. PubMed ID: 32865391
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  • 7. Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes.
    Yang I, Li Z, Wong-Leung J, Zhu Y, Li Z, Gagrani N, Li L, Lockrey MN, Nguyen H, Lu Y, Tan HH, Jagadish C, Fu L.
    Nano Lett; 2019 Jun 12; 19(6):3821-3829. PubMed ID: 31141386
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  • 10. Kinetic Engineering of Wurtzite and Zinc-Blende AlSb Shells on InAs Nanowires.
    Kindlund H, Zamani RR, Persson AR, Lehmann S, Wallenberg LR, Dick KA.
    Nano Lett; 2018 Sep 12; 18(9):5775-5781. PubMed ID: 30133288
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  • 11. Growth of InAs/InP core-shell nanowires with various pure crystal structures.
    Gorji Ghalamestani S, Heurlin M, Wernersson LE, Lehmann S, Dick KA.
    Nanotechnology; 2012 Jul 20; 23(28):285601. PubMed ID: 22717421
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  • 12. Polychromatic emission in a wide energy range from InP-InAs-InP multi-shell nanowires.
    Battiato S, Wu S, Zannier V, Bertoni A, Goldoni G, Li A, Xiao S, Han XD, Beltram F, Sorba L, Xu X, Rossella F.
    Nanotechnology; 2019 May 10; 30(19):194004. PubMed ID: 30634180
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  • 13. Selective-area epitaxy of pure wurtzite InP nanowires: high quantum efficiency and room-temperature lasing.
    Gao Q, Saxena D, Wang F, Fu L, Mokkapati S, Guo Y, Li L, Wong-Leung J, Caroff P, Tan HH, Jagadish C.
    Nano Lett; 2014 Sep 10; 14(9):5206-11. PubMed ID: 25115241
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  • 14. Synthesis and properties of ultra-long InP nanowires on glass.
    Dhaka V, Pale V, Khayrudinov V, Kakko JP, Haggren T, Jiang H, Kauppinen E, Lipsanen H.
    Nanotechnology; 2016 Dec 16; 27(50):505606. PubMed ID: 27875330
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  • 15. Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy.
    Dheeraj DL, Munshi AM, Scheffler M, van Helvoort AT, Weman H, Fimland BO.
    Nanotechnology; 2013 Jan 11; 24(1):015601. PubMed ID: 23220972
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  • 16. Metastable growth of pure wurtzite InGaAs microstructures.
    Ng KW, Ko WS, Lu F, Chang-Hasnain CJ.
    Nano Lett; 2014 Aug 13; 14(8):4757-62. PubMed ID: 24988280
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  • 17. In(x)Ga(1-x)As nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology.
    Ameruddin AS, Fonseka HA, Caroff P, Wong-Leung J, Op het Veld RL, Boland JL, Johnston MB, Tan HH, Jagadish C.
    Nanotechnology; 2015 May 22; 26(20):205604. PubMed ID: 25927420
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  • 19. Size control of InP nanowires byin situannealing and its application to the formation of InAsP quantum dots.
    Sasaki M, Akamatsu T, Tomioka K, Motohisa J.
    Nanotechnology; 2024 Feb 20; 35(19):. PubMed ID: 38306695
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  • 20. Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy.
    Dursap T, Vettori M, Botella C, Regreny P, Blanchard N, Gendry M, Chauvin N, Bugnet M, Danescu A, Penuelas J.
    Nanotechnology; 2021 Apr 09; 32(15):155602. PubMed ID: 33429384
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