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Pubmed for Handhelds

PUBMED FOR HANDHELDS

Journal Abstract Search

437 related items for PubMed ID: 30338976

  • 1. Plasma Polymerization Enabled Polymer/Metal-Oxide Hybrid Semiconductors for Wearable Electronics.
    Na JW, Kim HJ, Hong S, Kim HJ.
    ACS Appl Mater Interfaces; 2018 Oct 31; 10(43):37207-37215. PubMed ID: 30338976
    [Abstract] [Full Text] [Related]

  • 2. Mechanically Durable Organic/High-k Inorganic Hybrid Gate Dielectrics Enabled by Plasma-Polymerization of PTFE for Flexible Electronics.
    Kim GI, Jung J, Min WK, Kim MS, Jung S, Choi DH, Chung J, Kim HJ.
    ACS Appl Mater Interfaces; 2022 Jun 22; 14(24):28085-28096. PubMed ID: 35680562
    [Abstract] [Full Text] [Related]

  • 3. Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature.
    Yu BS, Jeon JY, Kang BC, Lee W, Kim YH, Ha TJ.
    Sci Rep; 2019 Jun 10; 9(1):8416. PubMed ID: 31182751
    [Abstract] [Full Text] [Related]

  • 4. Photo-induced Reactive Oxygen Species Activation for Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Sodium Hypochlorite.
    Kim WG, Tak YJ, Yoo H, Kim HT, Park JW, Choi DH, Kim HJ.
    ACS Appl Mater Interfaces; 2021 Sep 22; 13(37):44531-44540. PubMed ID: 34505504
    [Abstract] [Full Text] [Related]

  • 5. Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.
    Shin KY, Tak YJ, Kim WG, Hong S, Kim HJ.
    ACS Appl Mater Interfaces; 2017 Apr 19; 9(15):13278-13285. PubMed ID: 28299924
    [Abstract] [Full Text] [Related]

  • 6. Effect of Static and Rotating Magnetic Fields on Low-Temperature Fabrication of InGaZnO Thin-Film Transistors.
    Park JW, Tak YJ, Na JW, Lee H, Kim WG, Kim HJ.
    ACS Appl Mater Interfaces; 2018 May 16; 10(19):16613-16622. PubMed ID: 29682960
    [Abstract] [Full Text] [Related]

  • 7. Enhanced Electrical Properties and Stability in IGZO TFTs via Low-Temperature Activation with MgOx Layer.
    Kim MS, Kim HT, Jung S, Kim YW, Lee S, Kim HJ.
    ACS Appl Mater Interfaces; 2024 Aug 07; 16(31):41127-41133. PubMed ID: 39058501
    [Abstract] [Full Text] [Related]

  • 8. Vertically Graded Oxygen Deficiency for Improving Electrical Characteristics and Stability of Indium Gallium Zinc Oxide Thin-Film Transistors.
    Yoon CS, Kim HT, Kim MS, Yoo H, Park JW, Choi DH, Kim D, Kim HJ.
    ACS Appl Mater Interfaces; 2021 Jan 27; 13(3):4110-4116. PubMed ID: 33448781
    [Abstract] [Full Text] [Related]

  • 9. Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistors.
    Han Y, Lee DH, Cho ES, Kwon SJ, Yoo H.
    Micromachines (Basel); 2023 Jul 08; 14(7):. PubMed ID: 37512704
    [Abstract] [Full Text] [Related]

  • 10. Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors.
    Stallings K, Smith J, Chen Y, Zeng L, Wang B, Di Carlo G, Bedzyk MJ, Facchetti A, Marks TJ.
    ACS Appl Mater Interfaces; 2021 Apr 07; 13(13):15399-15408. PubMed ID: 33779161
    [Abstract] [Full Text] [Related]

  • 11. Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility.
    Everaerts K, Zeng L, Hennek JW, Camacho DI, Jariwala D, Bedzyk MJ, Hersam MC, Marks TJ.
    ACS Appl Mater Interfaces; 2013 Nov 27; 5(22):11884-93. PubMed ID: 24187917
    [Abstract] [Full Text] [Related]

  • 12. Multifunctional Oxygen Scavenger Layer for High-Performance Oxide Thin-Film Transistors with Low-Temperature Processing.
    Kim MS, Kim HT, Yoo H, Choi DH, Park JW, Kim TS, Lim JH, Kim HJ.
    ACS Appl Mater Interfaces; 2021 Jul 14; 13(27):31816-31824. PubMed ID: 34180652
    [Abstract] [Full Text] [Related]

  • 13. High-Performance Inkjet-Printed Indium-Gallium-Zinc-Oxide Transistors Enabled by Embedded, Chemically Stable Graphene Electrodes.
    Secor EB, Smith J, Marks TJ, Hersam MC.
    ACS Appl Mater Interfaces; 2016 Jul 13; 8(27):17428-34. PubMed ID: 27327555
    [Abstract] [Full Text] [Related]

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  • 15. Expeditious, scalable solution growth of metal oxide films by combustion blade coating for flexible electronics.
    Wang B, Guo P, Zeng L, Yu X, Sil A, Huang W, Leonardi MJ, Zhang X, Wang G, Lu S, Chen Z, Bedzyk MJ, Schaller RD, Marks TJ, Facchetti A.
    Proc Natl Acad Sci U S A; 2019 May 07; 116(19):9230-9238. PubMed ID: 31004056
    [Abstract] [Full Text] [Related]

  • 16. Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors.
    Heo JS, Jo JW, Kang J, Jeong CY, Jeong HY, Kim SK, Kim K, Kwon HI, Kim J, Kim YH, Kim MG, Park SK.
    ACS Appl Mater Interfaces; 2016 Apr 27; 8(16):10403-12. PubMed ID: 27035796
    [Abstract] [Full Text] [Related]

  • 17. Amorphous IGZO TFT with High Mobility of ∼70 cm2/(V s) via Vertical Dimension Control Using PEALD.
    Sheng J, Hong T, Lee HM, Kim K, Sasase M, Kim J, Hosono H, Park JS.
    ACS Appl Mater Interfaces; 2019 Oct 30; 11(43):40300-40309. PubMed ID: 31584254
    [Abstract] [Full Text] [Related]

  • 18. Performance Enhancement and Bending Restoration for Flexible Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors by Low-Temperature Supercritical Dehydration Treatment.
    Zhang J, Huang W, Chang KC, Shi Y, Zhao C, Wang X, Meng H, Zhang S, Zhang M.
    ACS Appl Mater Interfaces; 2021 Feb 24; 13(7):8584-8594. PubMed ID: 33555178
    [Abstract] [Full Text] [Related]

  • 19. Conductive Polymer-Assisted Metal Oxide Hybrid Semiconductors for High-Performance Thin-Film Transistors.
    Lee EG, Gong YJ, Lee SE, Na HJ, Im C, Kim H, Kim YS.
    ACS Appl Mater Interfaces; 2021 Feb 24; 13(7):8552-8562. PubMed ID: 33566562
    [Abstract] [Full Text] [Related]

  • 20. Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack.
    Cho MH, Choi CH, Seul HJ, Cho HC, Jeong JK.
    ACS Appl Mater Interfaces; 2021 Apr 14; 13(14):16628-16640. PubMed ID: 33793185
    [Abstract] [Full Text] [Related]

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