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Journal Abstract Search

310 related items for PubMed ID: 30640426

  • 1. Trap-Assisted Enhanced Bias Illumination Stability of Oxide Thin Film Transistor by Praseodymium Doping.
    Xu H, Xu M, Li M, Chen Z, Zou J, Wu W, Qiao X, Tao H, Wang L, Ning H, Ma D, Peng J.
    ACS Appl Mater Interfaces; 2019 Feb 06; 11(5):5232-5239. PubMed ID: 30640426
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  • 6. Photobias instability of high performance solution processed amorphous zinc tin oxide transistors.
    Kim YJ, Yang BS, Oh S, Han SJ, Lee HW, Heo J, Jeong JK, Kim HJ.
    ACS Appl Mater Interfaces; 2013 Apr 24; 5(8):3255-61. PubMed ID: 23540523
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  • 7. Improved Photo-Induced Stability in Amorphous Metal-Oxide Based TFTs for Transparent Displays.
    Koo SM, Ha TJ.
    J Nanosci Nanotechnol; 2015 Oct 24; 15(10):7800-3. PubMed ID: 26726416
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  • 8. Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers.
    Zhang Y, Xie H, Dong C.
    Micromachines (Basel); 2019 Nov 14; 10(11):. PubMed ID: 31739504
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  • 9. Indium Tungsten Oxide Thin Films for Flexible High-Performance Transistors and Neuromorphic Electronics.
    Tiwari N, Rajput M, John RA, Kulkarni MR, Nguyen AC, Mathews N.
    ACS Appl Mater Interfaces; 2018 Sep 12; 10(36):30506-30513. PubMed ID: 30129368
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  • 11. Hydrogen-Doping-Enabled Boosting of the Carrier Mobility and Stability in Amorphous IGZTO Transistors.
    Lee J, Choi CH, Kim T, Hur J, Kim MJ, Kim EH, Lim JH, Kang Y, Jeong JK.
    ACS Appl Mater Interfaces; 2022 Dec 28; 14(51):57016-57027. PubMed ID: 36511797
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  • 12. Lanthanum Doping in Zinc Oxide for Highly Reliable Thin-Film Transistors on Flexible Substrates by Spray Pyrolysis.
    Bukke RN, Saha JK, Mude NN, Kim Y, Lee S, Jang J.
    ACS Appl Mater Interfaces; 2020 Aug 05; 12(31):35164-35174. PubMed ID: 32657115
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  • 13. Improvement in the Positive Bias Temperature Stability of SnOx-Based Thin Film Transistors by Hf and Zn Doping.
    Han D, Park J, Kang M, Jeon H, Park J.
    J Nanosci Nanotechnol; 2015 Oct 05; 15(10):7606-10. PubMed ID: 26726382
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  • 16. Boosting Carrier Mobility in Zinc Oxynitride Thin-Film Transistors via Tantalum Oxide Encapsulation.
    Kim T, Kim MJ, Lee J, Jeong JK.
    ACS Appl Mater Interfaces; 2019 Jun 26; 11(25):22501-22509. PubMed ID: 31190521
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  • 17. Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors.
    Avis C, Kim Y, Jang J.
    Materials (Basel); 2019 Oct 14; 12(20):. PubMed ID: 31614961
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