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PUBMED FOR HANDHELDS

Journal Abstract Search


120 related items for PubMed ID: 30776790

  • 1.
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  • 2. Giant Magnetic Band Gap in the Rashba-Split Surface State of Vanadium-Doped BiTeI: A Combined Photoemission and Ab Initio Study.
    Klimovskikh II, Shikin AM, Otrokov MM, Ernst A, Rusinov IP, Tereshchenko OE, Golyashov VA, Sánchez-Barriga J, Varykhalov AY, Rader O, Kokh KA, Chulkov EV.
    Sci Rep; 2017 Jun 13; 7(1):3353. PubMed ID: 28611416
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  • 4. Disentanglement of surface and bulk Rashba spin splittings in noncentrosymmetric BiTeI.
    Landolt G, Eremeev SV, Koroteev YM, Slomski B, Muff S, Neupert T, Kobayashi M, Strocov VN, Schmitt T, Aliev ZS, Babanly MB, Amiraslanov IR, Chulkov EV, Osterwalder J, Dil JH.
    Phys Rev Lett; 2012 Sep 14; 109(11):116403. PubMed ID: 23005655
    [Abstract] [Full Text] [Related]

  • 5. The Giant Spin-to-Charge Conversion of the Layered Rashba Material BiTeI.
    Cai L, Yu C, Zhao W, Li Y, Feng H, Zhou HA, Wang L, Zhang X, Zhang Y, Shi Y, Zhang J, Yang L, Jiang W.
    Nano Lett; 2022 Sep 28; 22(18):7441-7448. PubMed ID: 36099337
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  • 6. Photoinduced Rashba Spin-to-Charge Conversion via an Interfacial Unoccupied State.
    Puebla J, Auvray F, Yamaguchi N, Xu M, Bisri SZ, Iwasa Y, Ishii F, Otani Y.
    Phys Rev Lett; 2019 Jun 28; 122(25):256401. PubMed ID: 31347901
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  • 7. Spin-texture inversion in the giant Rashba semiconductor BiTeI.
    Maaß H, Bentmann H, Seibel C, Tusche C, Eremeev SV, Peixoto TR, Tereshchenko OE, Kokh KA, Chulkov EV, Kirschner J, Reinert F.
    Nat Commun; 2016 May 18; 7():11621. PubMed ID: 27188584
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  • 8.
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  • 9. Giant ambipolar Rashba effect in the semiconductor BiTeI.
    Crepaldi A, Moreschini L, Autès G, Tournier-Colletta C, Moser S, Virk N, Berger H, Bugnon P, Chang YJ, Kern K, Bostwick A, Rotenberg E, Yazyev OV, Grioni M.
    Phys Rev Lett; 2012 Aug 31; 109(9):096803. PubMed ID: 23002871
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  • 10. Mapping polarization induced surface band bending on the Rashba semiconductor BiTeI.
    Butler CJ, Yang HH, Hong JY, Hsu SH, Sankar R, Lu CI, Lu HY, Yang KH, Shiu HW, Chen CH, Kaun CC, Shu GJ, Chou FC, Lin MT.
    Nat Commun; 2014 Jun 05; 5():4066. PubMed ID: 24898943
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  • 11. Enhanced infrared magneto-optical response of the nonmagnetic semiconductor BiTeI driven by bulk Rashba splitting.
    Demkó L, Schober GA, Kocsis V, Bahramy MS, Murakawa H, Lee JS, Kézsmárki I, Arita R, Nagaosa N, Tokura Y.
    Phys Rev Lett; 2012 Oct 19; 109(16):167401. PubMed ID: 23215127
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  • 12. Quantitative analysis on electric dipole energy in Rashba band splitting.
    Hong J, Rhim JW, Kim C, Ryong Park S, Hoon Shim J.
    Sci Rep; 2015 Sep 01; 5():13488. PubMed ID: 26323493
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  • 13. Hierarchical spin-orbital polarization of a giant Rashba system.
    Bawden L, Riley JM, Kim CH, Sankar R, Monkman EJ, Shai DE, Wei HI, Lochocki EB, Wells JW, Meevasana W, Kim TK, Hoesch M, Ohtsubo Y, Le Fèvre P, Fennie CJ, Shen KM, Chou F, King PD.
    Sci Adv; 2015 Sep 01; 1(8):e1500495. PubMed ID: 26601268
    [Abstract] [Full Text] [Related]

  • 14. Tuning independently the Fermi energy and spin splitting in Rashba systems: ternary surface alloys on Ag(111).
    Mirhosseini H, Ernst A, Ostanin S, Henk J.
    J Phys Condens Matter; 2010 Sep 29; 22(38):385501. PubMed ID: 21386552
    [Abstract] [Full Text] [Related]

  • 15. Orbital-angular-momentum based origin of Rashba-type surface band splitting.
    Park SR, Kim CH, Yu J, Han JH, Kim C.
    Phys Rev Lett; 2011 Oct 07; 107(15):156803. PubMed ID: 22107313
    [Abstract] [Full Text] [Related]

  • 16. Optical response of relativistic electrons in the polar BiTeI semiconductor.
    Lee JS, Schober GA, Bahramy MS, Murakawa H, Onose Y, Arita R, Nagaosa N, Tokura Y.
    Phys Rev Lett; 2011 Sep 09; 107(11):117401. PubMed ID: 22026701
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  • 19. Strong Linear Dichroism in Spin-Polarized Photoemission from Spin-Orbit-Coupled Surface States.
    Bentmann H, Maaß H, Krasovskii EE, Peixoto TRF, Seibel C, Leandersson M, Balasubramanian T, Reinert F.
    Phys Rev Lett; 2017 Sep 08; 119(10):106401. PubMed ID: 28949177
    [Abstract] [Full Text] [Related]

  • 20. Mechanisms of enhanced orbital dia- and paramagnetism: application to the Rashba semiconductor BiTeI.
    Schober GA, Murakawa H, Bahramy MS, Arita R, Kaneko Y, Tokura Y, Nagaosa N.
    Phys Rev Lett; 2012 Jun 15; 108(24):247208. PubMed ID: 23004320
    [Abstract] [Full Text] [Related]


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