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Journal Abstract Search

251 related items for PubMed ID: 30817114

  • 1. Grain Boundaries as Electrical Conduction Channels in Polycrystalline Monolayer WS2.
    Zhou Y, Sarwat SG, Jung GS, Buehler MJ, Bhaskaran H, Warner JH.
    ACS Appl Mater Interfaces; 2019 Mar 13; 11(10):10189-10197. PubMed ID: 30817114
    [Abstract] [Full Text] [Related]

  • 2. Electroluminescence Dynamics across Grain Boundary Regions of Monolayer Tungsten Disulfide.
    Rong Y, Sheng Y, Pacios M, Wang X, He Z, Bhaskaran H, Warner JH.
    ACS Nano; 2016 Jan 26; 10(1):1093-100. PubMed ID: 26636982
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  • 4. Preferential Pt Nanocluster Seeding at Grain Boundary Dislocations in Polycrystalline Monolayer MoS2.
    Wang S, Sawada H, Han X, Zhou S, Li S, Guo ZX, Kirkland AI, Warner JH.
    ACS Nano; 2018 Jun 26; 12(6):5626-5636. PubMed ID: 29762015
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  • 6. Doping Graphene Transistors Using Vertical Stacked Monolayer WS2 Heterostructures Grown by Chemical Vapor Deposition.
    Tan H, Fan Y, Rong Y, Porter B, Lau CS, Zhou Y, He Z, Wang S, Bhaskaran H, Warner JH.
    ACS Appl Mater Interfaces; 2016 Jan 27; 8(3):1644-52. PubMed ID: 26756350
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  • 8. Atomically Sharp Dual Grain Boundaries in 2D WS2 Bilayers.
    Chen J, Jung GS, Ryu GH, Chang RJ, Zhou S, Wen Y, Buehler MJ, Warner JH.
    Small; 2019 Oct 27; 15(42):e1902590. PubMed ID: 31448580
    [Abstract] [Full Text] [Related]

  • 9. Electrically benign behavior of grain boundaries in polycrystalline CuInSe2 films.
    Yan Y, Jiang CS, Noufi R, Wei SH, Moutinho HR, Al-Jassim MM.
    Phys Rev Lett; 2007 Dec 07; 99(23):235504. PubMed ID: 18233382
    [Abstract] [Full Text] [Related]

  • 10. Reduced Turn-On Voltage and Boosted Mobility in Monolayer WS2 Transistors by Mild Ar+ Plasma Treatment.
    Hou J, Ke C, Chen J, Sun B, Xia Y, Li X, Chen T, Wu Y, Wu Z, Kang J.
    ACS Appl Mater Interfaces; 2020 Apr 29; 12(17):19635-19642. PubMed ID: 32255332
    [Abstract] [Full Text] [Related]

  • 11. Effect of Carrier Localization on Electrical Transport and Noise at Individual Grain Boundaries in Monolayer MoS2.
    Hsieh K, Kochat V, Zhang X, Gong Y, Tiwary CS, Ajayan PM, Ghosh A.
    Nano Lett; 2017 Sep 13; 17(9):5452-5457. PubMed ID: 28786685
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  • 12. Grain wall boundaries in centimeter-scale continuous monolayer WS2 film grown by chemical vapor deposition.
    Jia Z, Hu W, Xiang J, Wen F, Nie A, Mu C, Zhao Z, Xu B, Tian Y, Liu Z.
    Nanotechnology; 2018 Jun 22; 29(25):255705. PubMed ID: 29620537
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  • 14. Atomic Structure of Dislocations and Grain Boundaries in Two-Dimensional PtSe2.
    Chen J, Wang Y, Xu W, Wen Y, Ryu GH, Grossman JC, Warner JH.
    ACS Nano; 2021 Oct 26; 15(10):16748-16759. PubMed ID: 34610239
    [Abstract] [Full Text] [Related]

  • 15. Direct Four-Probe Measurement of Grain-Boundary Resistivity and Mobility in Millimeter-Sized Graphene.
    Ma R, Huan Q, Wu L, Yan J, Guo W, Zhang YY, Wang S, Bao L, Liu Y, Du S, Pantelides ST, Gao HJ.
    Nano Lett; 2017 Sep 13; 17(9):5291-5296. PubMed ID: 28786680
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  • 16. Local mapping of surface potential in pentacene thin film under gate bias voltage obtained by scanning kelvin probe microscopy.
    Ndikumana J, An K.
    Microsc Res Tech; 2024 Mar 13; 87(3):470-475. PubMed ID: 37921235
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  • 18. Effects of Moisture-Based Grain Boundary Passivation on Cell Performance and Ionic Migration in Organic-Inorganic Halide Perovskite Solar Cells.
    Hoque MNF, He R, Warzywoda J, Fan Z.
    ACS Appl Mater Interfaces; 2018 Sep 12; 10(36):30322-30329. PubMed ID: 30118195
    [Abstract] [Full Text] [Related]

  • 19. Analysis of noise generation and electric conduction at grain boundaries in CVD-grown MoS2 field effect transistors.
    Kim JK, Song Y, Kim TY, Cho K, Pak J, Choi BY, Shin J, Chung S, Lee T.
    Nanotechnology; 2017 Nov 24; 28(47):47LT01. PubMed ID: 28994396
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