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Journal Abstract Search

161 related items for PubMed ID: 30960826

  • 1. Preparation of Polyimide/Graphene Oxide Nanocomposite and Its Application to Nonvolatile Resistive Memory Device.
    Choi JY, Yu HC, Lee J, Jeon J, Im J, Jang J, Jin SW, Kim KK, Cho S, Chung CM.
    Polymers (Basel); 2018 Aug 11; 10(8):. PubMed ID: 30960826
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  • 2. Temperature dependence of resistive switching behaviors in resistive random access memory based on graphene oxide film.
    Yi M, Cao Y, Ling H, Du Z, Wang L, Yang T, Fan Q, Xie L, Huang W.
    Nanotechnology; 2014 May 09; 25(18):185202. PubMed ID: 24739543
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  • 5. Tunable Memristic Characteristics Based on Graphene Oxide Charge-Trap Memory.
    Li L.
    Micromachines (Basel); 2019 Feb 23; 10(2):. PubMed ID: 30813443
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  • 8. Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITOX:SiO2 Thin Films on Resistive Random Access Memory Devices.
    Chen KH, Cheng CM, Wang NF, Kao MC.
    Nanomaterials (Basel); 2023 Jul 26; 13(15):. PubMed ID: 37570498
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  • 9. Multi-Level Resistive Al/Ga2O3/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing.
    Wang LW, Huang CW, Lee KJ, Chu SY, Wang YH.
    Nanomaterials (Basel); 2023 Jun 13; 13(12):. PubMed ID: 37368281
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  • 10. Resistive switching behavior and multiple transmittance states in solution-processed tungsten oxide.
    Wu WT, Wu JJ, Chen JS.
    ACS Appl Mater Interfaces; 2011 Jul 13; 3(7):2616-21. PubMed ID: 21702504
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  • 11. Resistive switching behavior of reduced graphene oxide memory cells for low power nonvolatile device application.
    Pradhan SK, Xiao B, Mishra S, Killam A, Pradhan AK.
    Sci Rep; 2016 May 31; 6():26763. PubMed ID: 27240537
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  • 12. Resistance Switching Characteristics Induced by O2 Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory.
    Chen PH, Chang TC, Chang KC, Tsai TM, Pan CH, Chen MC, Su YT, Lin CY, Tseng YT, Huang HC, Wu H, Deng N, Qian H, Sze SM.
    ACS Appl Mater Interfaces; 2017 Jan 25; 9(3):3149-3155. PubMed ID: 28072511
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  • 18. Bipolar Switching Properties of the Transparent Indium Tin Oxide Thin Film Resistance Random Access Memories.
    Chen KH, Cheng CM, Chen ML, Pan YY.
    Nanomaterials (Basel); 2023 Feb 10; 13(4):. PubMed ID: 36839057
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  • 19. Non-Polar and Complementary Resistive Switching Characteristics in Graphene Oxide devices with Gold Nanoparticles: Diverse Approach for Device Fabrication.
    Khurana G, Kumar N, Chhowalla M, Scott JF, Katiyar RS.
    Sci Rep; 2019 Oct 22; 9(1):15103. PubMed ID: 31641183
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  • 20. Graphene oxide thin films for flexible nonvolatile memory applications.
    Jeong HY, Kim JY, Kim JW, Hwang JO, Kim JE, Lee JY, Yoon TH, Cho BJ, Kim SO, Ruoff RS, Choi SY.
    Nano Lett; 2010 Nov 10; 10(11):4381-6. PubMed ID: 20919689
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