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Journal Abstract Search

162 related items for PubMed ID: 30998702

  • 1. Confined and interface optical phonon emission in GaN/InGaN double barrier quantum well heterostructures.
    Mohamed A, Park K, Bayram C, Dutta M, Stroscio M.
    PLoS One; 2019; 14(4):e0214971. PubMed ID: 30998702
    [Abstract] [Full Text] [Related]

  • 2. Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure.
    Park K, Mohamed A, Dutta M, Stroscio MA, Bayram C.
    Sci Rep; 2018 Oct 29; 8(1):15947. PubMed ID: 30374108
    [Abstract] [Full Text] [Related]

  • 3. Intensive measures of luminescence in GaN/InGaN heterostructures.
    Hsiao JJ, Huang YJ, Chen HI, Jiang JA, Wang JC, Wu YF, Nee TE.
    PLoS One; 2019 Oct 29; 14(9):e0222928. PubMed ID: 31550270
    [Abstract] [Full Text] [Related]

  • 4. Effect of quantum confinement on lifetime of anharmonic decay of optical phonons in semiconductor nanostructures.
    Datta D, Krishnababu K, Stroscio MA, Dutta M.
    J Phys Condens Matter; 2018 Sep 05; 30(35):355302. PubMed ID: 29972139
    [Abstract] [Full Text] [Related]

  • 5. GaN-based two-dimensional channels: hot-electron fluctuations and dissipation.
    Matulionis A.
    J Phys Condens Matter; 2009 Apr 29; 21(17):174203. PubMed ID: 21825407
    [Abstract] [Full Text] [Related]

  • 6. Electron-phonon interaction model and prediction of thermal energy transport in SOI transistor.
    Jin JS, Lee JS.
    J Nanosci Nanotechnol; 2007 Nov 29; 7(11):4094-100. PubMed ID: 18047127
    [Abstract] [Full Text] [Related]

  • 7. Rigid ion model of high field transport in GaN.
    Yamakawa S, Akis R, Faralli N, Saraniti M, Goodnick SM.
    J Phys Condens Matter; 2009 Apr 29; 21(17):174206. PubMed ID: 21825410
    [Abstract] [Full Text] [Related]

  • 8. The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons?
    Mao LF, Ning HS, Wang JY.
    PLoS One; 2015 Apr 29; 10(6):e0128438. PubMed ID: 26039589
    [Abstract] [Full Text] [Related]

  • 9. On the feasibility of hearing electrons in a 1D device through emitted phonons.
    Verma A, Nekovei R, Kauser Z.
    Sci Rep; 2021 Mar 09; 11(1):5452. PubMed ID: 33750875
    [Abstract] [Full Text] [Related]

  • 10. Optical study of electron and acoustic phonon confinement in ultrathin-body germanium-on-insulator nanolayers.
    Poborchii V, Groenen J, Geshev PI, Hattori J, Chang WH, Ishii H, Irisawa T, Maeda T.
    Nanoscale; 2021 Jun 03; 13(21):9686-9697. PubMed ID: 34018526
    [Abstract] [Full Text] [Related]

  • 11. Theory of quasi-elastic secondary emission from a quantum dot in the regime of vibrational resonance.
    Rukhlenko ID, Fedorov AV, Baymuratov AS, Premaratne M.
    Opt Express; 2011 Aug 01; 19(16):15459-82. PubMed ID: 21934910
    [Abstract] [Full Text] [Related]

  • 12. Correction: Confined and interface optical phonon emission in GaN/InGaN double barrier quantum well heterostructures.
    PLOS ONE Staff.
    PLoS One; 2019 Aug 01; 14(5):e0216630. PubMed ID: 31048883
    [Abstract] [Full Text] [Related]

  • 13. Role of Confined Optical Phonons in Exciton Generation in Spherical Quantum Dot.
    Singh R, Dutta M, Stroscio MA.
    Materials (Basel); 2022 Aug 12; 15(16):. PubMed ID: 36013681
    [Abstract] [Full Text] [Related]

  • 14. Phonon populations and electrical power dissipation in carbon nanotube transistors.
    Steiner M, Freitag M, Perebeinos V, Tsang JC, Small JP, Kinoshita M, Yuan D, Liu J, Avouris P.
    Nat Nanotechnol; 2009 May 12; 4(5):320-4. PubMed ID: 19421219
    [Abstract] [Full Text] [Related]

  • 15. Low-field mobility in an electrostatically confined 2D rectangular nanowire: effect of density of states and phonon confinement.
    Surapaneni S, Jha J, Pendem V, Yadav YK, Ganguly S, Saha D.
    Nanotechnology; 2021 Aug 18; 32(45):. PubMed ID: 34343974
    [Abstract] [Full Text] [Related]

  • 16. Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach).
    Kovalenko KL, Kozlovskiy SI, Sharan NN, Venger EF.
    J Phys Condens Matter; 2024 May 13; 36(32):. PubMed ID: 38738500
    [Abstract] [Full Text] [Related]

  • 17. Nonequilibrium electron-phonon coupling across the interfaces between Al nanofilm and GaN.
    Chen J, Bao W, Wang Z, Xu K, Tang D.
    Phys Chem Chem Phys; 2024 Mar 06; 26(10):8504-8514. PubMed ID: 38411463
    [Abstract] [Full Text] [Related]

  • 18. Enhanced hot electron lifetimes in quantum wells with inhibited phonon coupling.
    Esmaielpour H, Whiteside VR, Piyathilaka HP, Vijeyaragunathan S, Wang B, Adcock-Smith E, Roberts KP, Mishima TD, Santos MB, Bristow AD, Sellers IR.
    Sci Rep; 2018 Aug 20; 8(1):12473. PubMed ID: 30127507
    [Abstract] [Full Text] [Related]

  • 19. Electron Heat Source Driven Heat Transport in GaN at Nanoscale: Electron-Phonon Monte Carlo Simulations and a Two Temperature Model.
    Muthukunnil Joseph A, Cao B.
    Materials (Basel); 2022 Feb 23; 15(5):. PubMed ID: 35268881
    [Abstract] [Full Text] [Related]

  • 20. Atomistic Engineering of Phonons in Functional Oxide Heterostructures.
    Jeong SG, Seo A, Choi WS.
    Adv Sci (Weinh); 2022 Mar 23; 9(7):e2103403. PubMed ID: 35038232
    [Abstract] [Full Text] [Related]

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