These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


Pubmed for Handhelds

PUBMED FOR HANDHELDS

Journal Abstract Search

213 related items for PubMed ID: 31026916

  • 1. Effects of Al Addition on Resistive-Switching Characteristics of Solution Processed Zn-Sn-O ReRAMs.
    Kim TW, Cho WJ.
    J Nanosci Nanotechnol; 2019 Oct 01; 19(10):6099-6105. PubMed ID: 31026916
    [Abstract] [Full Text] [Related]

  • 2. Performance Enhancement of Channel-Engineered Al-Zn-Sn-O Thin-Film Transistors with Highly Conductive In-Ga-Zn-O Buried Layer via Vacuum Rapid Thermal Annealing.
    Kim SH, Cho WJ.
    J Nanosci Nanotechnol; 2020 Aug 01; 20(8):4671-4677. PubMed ID: 32126639
    [Abstract] [Full Text] [Related]

  • 3. Lowering the Trap-State Density of Transparent Amorphous Oxide Semiconductor-Based Thin Film Transistors Through Microwave Irradiation.
    Cho MH, Cho WJ.
    J Nanosci Nanotechnol; 2020 Nov 01; 20(11):6920-6924. PubMed ID: 32604537
    [Abstract] [Full Text] [Related]

  • 4. Carrier Concentration and Threshold Voltage Variability of Amorphous Oxide Semiconductors Using Vacuum Rapid Thermal Annealing.
    Shin JW, Cho WJ.
    J Nanosci Nanotechnol; 2020 Jul 01; 20(7):4276-4281. PubMed ID: 31968457
    [Abstract] [Full Text] [Related]

  • 5.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 6. Highly uniform resistive switching properties of amorphous InGaZnO thin films prepared by a low temperature photochemical solution deposition method.
    Hu W, Zou L, Chen X, Qin N, Li S, Bao D.
    ACS Appl Mater Interfaces; 2014 Apr 09; 6(7):5012-7. PubMed ID: 24635893
    [Abstract] [Full Text] [Related]

  • 7.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 8.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 9. Resistive Switching Characteristics of Nonvolatile Memory with HSQ Film Using Microwave Irradiation.
    Min SY, Cho WJ.
    J Nanosci Nanotechnol; 2020 Aug 01; 20(8):4740-4745. PubMed ID: 32126650
    [Abstract] [Full Text] [Related]

  • 10. Improvement in Resistance Switching of SiC-Based Nonvolatile Memory by Solution-Deposited HfOx Thin Film.
    Kim TW, Cho WJ.
    J Nanosci Nanotechnol; 2019 Mar 01; 19(3):1248-1253. PubMed ID: 30469171
    [Abstract] [Full Text] [Related]

  • 11. Uncovering the Indium Filament Revolution in Transparent Bipolar ITO/SiOx/ITO Resistive Switching Memories.
    Qian K, Han X, Li H, Chen T, Lee PS.
    ACS Appl Mater Interfaces; 2020 Jan 29; 12(4):4579-4585. PubMed ID: 31891483
    [Abstract] [Full Text] [Related]

  • 12.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 13.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 14. Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering.
    Zhao X, Li Y, Ai C, Wen D.
    Materials (Basel); 2019 Apr 18; 12(8):. PubMed ID: 31003535
    [Abstract] [Full Text] [Related]

  • 15.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 16.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 17.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 18. Ferroelectric-mediated filamentary resistive switching in P(VDF-TrFE)/ZnO nanocomposite films.
    Kim TY, Anoop G, Son YJ, Kim SH, Lee E, Jo JY.
    Phys Chem Chem Phys; 2018 Jun 13; 20(23):16176-16183. PubMed ID: 29862403
    [Abstract] [Full Text] [Related]

  • 19. Effect of Simplified-Single-Step Microwave Annealing in O₂ Ambient for High Performance Solution-Processed In-Ga-Zn-O Thin Film Transistors.
    Cho SK, Cho WJ.
    J Nanosci Nanotechnol; 2020 Jul 01; 20(7):4163-4169. PubMed ID: 31968435
    [Abstract] [Full Text] [Related]

  • 20.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

    Page: [Next] [New Search]
    of 11.