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Pubmed for Handhelds

PUBMED FOR HANDHELDS

Journal Abstract Search

335 related items for PubMed ID: 31026932

  • 1. The Effect of Crystalline Aluminum Oxide on Device Performance of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Operating at Low Voltage.
    Park SJ, Yu BS, Ha TJ.
    J Nanosci Nanotechnol; 2019 Oct 01; 19(10):6178-6182. PubMed ID: 31026932
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  • 2. Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature.
    Yu BS, Jeon JY, Kang BC, Lee W, Kim YH, Ha TJ.
    Sci Rep; 2019 Jun 10; 9(1):8416. PubMed ID: 31182751
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  • 7. Effects of annealing conditions on the dielectric properties of solution-processed Al2O3 layers for indium-zinc-tin-oxide thin-film transistors.
    Kim YH, Kim KH, Park SK.
    J Nanosci Nanotechnol; 2013 Nov 10; 13(11):7779-82. PubMed ID: 24245333
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  • 8. Expeditious, scalable solution growth of metal oxide films by combustion blade coating for flexible electronics.
    Wang B, Guo P, Zeng L, Yu X, Sil A, Huang W, Leonardi MJ, Zhang X, Wang G, Lu S, Chen Z, Bedzyk MJ, Schaller RD, Marks TJ, Facchetti A.
    Proc Natl Acad Sci U S A; 2019 May 07; 116(19):9230-9238. PubMed ID: 31004056
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  • 9. Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility.
    Everaerts K, Zeng L, Hennek JW, Camacho DI, Jariwala D, Bedzyk MJ, Hersam MC, Marks TJ.
    ACS Appl Mater Interfaces; 2013 Nov 27; 5(22):11884-93. PubMed ID: 24187917
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  • 10. The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor.
    Park S, Bang S, Lee S, Park J, Ko Y, Jeon H.
    J Nanosci Nanotechnol; 2011 Jul 27; 11(7):6029-33. PubMed ID: 22121652
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  • 11. A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance.
    Kim H, Kwack YJ, Yun EJ, Choi WS.
    Sci Rep; 2016 Sep 19; 6():33576. PubMed ID: 27641430
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  • 14. Proton Conducting Perhydropolysilazane-Derived Gate Dielectric for Solution-Processed Metal Oxide-Based Thin-Film Transistors.
    Kang YH, Min BK, Kim SK, Bae G, Song W, Lee C, Cho SY, An KS.
    ACS Appl Mater Interfaces; 2020 Apr 01; 12(13):15396-15405. PubMed ID: 32148019
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  • 17. Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric.
    Choi S, Song S, Kim T, Shin JC, Jo JW, Park SK, Kim YH.
    Micromachines (Basel); 2020 Nov 25; 11(12):. PubMed ID: 33255690
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  • 18. Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors.
    Stallings K, Smith J, Chen Y, Zeng L, Wang B, Di Carlo G, Bedzyk MJ, Facchetti A, Marks TJ.
    ACS Appl Mater Interfaces; 2021 Apr 07; 13(13):15399-15408. PubMed ID: 33779161
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