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Journal Abstract Search
205 related items for PubMed ID: 31066419
1. Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride. Wang D, Lu Y, Meng J, Zhang X, Yin Z, Gao M, Wang Y, Cheng L, You J, Zhang J. Nanoscale; 2019 May 16; 11(19):9310-9318. PubMed ID: 31066419 [Abstract] [Full Text] [Related]
3. Large-Area Synthesis of Layered HfS2(1-x)Se2x Alloys with Fully Tunable Chemical Compositions and Bandgaps. Wang D, Zhang X, Guo G, Gao S, Li X, Meng J, Yin Z, Liu H, Gao M, Cheng L, You J, Wang R. Adv Mater; 2018 Nov 16; 30(44):e1803285. PubMed ID: 30589474 [Abstract] [Full Text] [Related]
4. Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition. Meng JH, Zhang XW, Wang HL, Ren XB, Jin CH, Yin ZG, Liu X, Liu H. Nanoscale; 2015 Oct 14; 7(38):16046-53. PubMed ID: 26371688 [Abstract] [Full Text] [Related]
5. Epitaxial chemical vapour deposition growth of monolayer hexagonal boron nitride on a Cu(111)/sapphire substrate. Uchida Y, Iwaizako T, Mizuno S, Tsuji M, Ago H. Phys Chem Chem Phys; 2017 Mar 22; 19(12):8230-8235. PubMed ID: 28272611 [Abstract] [Full Text] [Related]
6. Repeated and controlled growth of monolayer, bilayer and few-layer hexagonal boron nitride on Pt foils. Gao Y, Ren W, Ma T, Liu Z, Zhang Y, Liu WB, Ma LP, Ma X, Cheng HM. ACS Nano; 2013 Jun 25; 7(6):5199-206. PubMed ID: 23663007 [Abstract] [Full Text] [Related]
12. The growth mechanism and intriguing optical and electronic properties of few-layered HfS2. Singh J, Shao JH, Chen GT, Wu HS, Tsai ML. Nanoscale Adv; 2022 Dec 20; 5(1):171-178. PubMed ID: 36605793 [Abstract] [Full Text] [Related]
13. Atomically Thin Hexagonal Boron Nitride and Its Heterostructures. Zhang J, Tan B, Zhang X, Gao F, Hu Y, Wang L, Duan X, Yang Z, Hu P. Adv Mater; 2021 Feb 20; 33(6):e2000769. PubMed ID: 32803781 [Abstract] [Full Text] [Related]
14. Ultraclean and large-area monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition. Wen Y, Shang X, Dong J, Xu K, He J, Jiang C. Nanotechnology; 2015 Jul 10; 26(27):275601. PubMed ID: 26082164 [Abstract] [Full Text] [Related]
15. Chemical Interaction-Guided, Metal-Free Growth of Large-Area Hexagonal Boron Nitride on Silicon-Based Substrates. Behura S, Nguyen P, Debbarma R, Che S, Seacrist MR, Berry V. ACS Nano; 2017 May 23; 11(5):4985-4994. PubMed ID: 28441003 [Abstract] [Full Text] [Related]
16. Electronic Properties of Transferable Atomically Thin MoSe2/h-BN Heterostructures Grown on Rh(111). Chen MW, Kim H, Bernard C, Pizzochero M, Zaldı Var J, Pascual JI, Ugeda MM, Yazyev OV, Greber T, Osterwalder J, Renault O, Kis A. ACS Nano; 2018 Nov 27; 12(11):11161-11168. PubMed ID: 30371049 [Abstract] [Full Text] [Related]
17. In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy. Zuo Z, Xu Z, Zheng R, Khanaki A, Zheng JG, Liu J. Sci Rep; 2015 Oct 07; 5():14760. PubMed ID: 26442629 [Abstract] [Full Text] [Related]
18. Synthesis of sub-millimeter single-crystal grains of aligned hexagonal boron nitride on an epitaxial Ni film. Taslim AB, Nakajima H, Lin YC, Uchida Y, Kawahara K, Okazaki T, Suenaga K, Hibino H, Ago H. Nanoscale; 2019 Aug 08; 11(31):14668-14675. PubMed ID: 31342052 [Abstract] [Full Text] [Related]
19. Control of the Mechanical Adhesion of III-V Materials Grown on Layered h-BN. Vuong P, Sundaram S, Mballo A, Patriarche G, Leone S, Benkhelifa F, Karrakchou S, Moudakir T, Gautier S, Voss PL, Salvestrini JP, Ougazzaden A. ACS Appl Mater Interfaces; 2020 Dec 09; 12(49):55460-55466. PubMed ID: 33237738 [Abstract] [Full Text] [Related]
20. Chemical Vapor Deposition Growth of Large Single-Crystal Mono-, Bi-, Tri-Layer Hexagonal Boron Nitride and Their Interlayer Stacking. Ji Y, Calderon B, Han Y, Cueva P, Jungwirth NR, Alsalman HA, Hwang J, Fuchs GD, Muller DA, Spencer MG. ACS Nano; 2017 Dec 26; 11(12):12057-12066. PubMed ID: 29099576 [Abstract] [Full Text] [Related] Page: [Next] [New Search]