These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


PUBMED FOR HANDHELDS

Journal Abstract Search


592 related items for PubMed ID: 31124358

  • 41.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 42. Hafnium Incorporation in InZnO Thin Film Transistors as a Carrier Suppressor.
    Lee D, Choi P, Park A, Jeon W, Choi D, Lee S, Choi B.
    J Nanosci Nanotechnol; 2020 Nov 01; 20(11):6675-6678. PubMed ID: 32604495
    [Abstract] [Full Text] [Related]

  • 43.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 44. Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors.
    Jeong Y, Pearson C, Kim HG, Park MY, Kim H, Do LM, Petty MC.
    ACS Appl Mater Interfaces; 2016 Jan 27; 8(3):2061-70. PubMed ID: 26704352
    [Abstract] [Full Text] [Related]

  • 45. Effect of organic buffer layer in the electrical properties of amorphous-indium gallium zinc oxide thin film transistor.
    Wang JX, Hyung GW, Li ZH, Son SY, Kwon SJ, Kim YK, Cho ES.
    J Nanosci Nanotechnol; 2012 Jul 27; 12(7):5644-7. PubMed ID: 22966625
    [Abstract] [Full Text] [Related]

  • 46. Polycrystalline InGaO Thin-Film Transistors with Coplanar Structure Exhibiting Average Mobility of ≈78 cm2 V-1 s-1 and Excellent Stability for Replacing Current Poly-Si Thin-Film Transistors for Organic Light-Emitting Diode Displays.
    Rabbi MH, Lee S, Sasaki D, Kawashima E, Tsuruma Y, Jang J.
    Small Methods; 2022 Sep 27; 6(9):e2200668. PubMed ID: 35879024
    [Abstract] [Full Text] [Related]

  • 47.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 48.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 49.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 50.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 51. Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor.
    Park JH, Yoo YB, Lee KH, Jang WS, Oh JY, Chae SS, Lee HW, Han SW, Baik HK.
    ACS Appl Mater Interfaces; 2013 Aug 28; 5(16):8067-75. PubMed ID: 23883390
    [Abstract] [Full Text] [Related]

  • 52. High-performance transparent inorganic-organic hybrid thin-film n-type transistors.
    Wang L, Yoon MH, Lu G, Yang Y, Facchetti A, Marks TJ.
    Nat Mater; 2006 Nov 28; 5(11):893-900. PubMed ID: 17041583
    [Abstract] [Full Text] [Related]

  • 53. Hydrogen-Doping-Enabled Boosting of the Carrier Mobility and Stability in Amorphous IGZTO Transistors.
    Lee J, Choi CH, Kim T, Hur J, Kim MJ, Kim EH, Lim JH, Kang Y, Jeong JK.
    ACS Appl Mater Interfaces; 2022 Dec 28; 14(51):57016-57027. PubMed ID: 36511797
    [Abstract] [Full Text] [Related]

  • 54.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 55. Achieving Ultralow Turn-On Voltages in Organic Thin-Film Transistors: Investigating Fluoroalkylphosphonic Acid Self-Assembled Monolayer Hybrid Dielectrics.
    Acharya R, Peng B, Chan PKL, Schmitz G, Klauk H.
    ACS Appl Mater Interfaces; 2019 Jul 31; 11(30):27104-27111. PubMed ID: 31267732
    [Abstract] [Full Text] [Related]

  • 56. Designing hybrid gate dielectric for fully printing high-performance carbon nanotube thin film transistors.
    Li Q, Li S, Yang D, Su W, Wang Y, Zhou W, Liu H, Xie S.
    Nanotechnology; 2017 Oct 27; 28(43):435203. PubMed ID: 28832342
    [Abstract] [Full Text] [Related]

  • 57. Indium Tungsten Oxide Thin Films for Flexible High-Performance Transistors and Neuromorphic Electronics.
    Tiwari N, Rajput M, John RA, Kulkarni MR, Nguyen AC, Mathews N.
    ACS Appl Mater Interfaces; 2018 Sep 12; 10(36):30506-30513. PubMed ID: 30129368
    [Abstract] [Full Text] [Related]

  • 58.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 59.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 60.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]


    Page: [Previous] [Next] [New Search]
    of 30.