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Journal Abstract Search

337 related items for PubMed ID: 31203632

  • 1. Si Doping of Vapor-Liquid-Solid GaAs Nanowires: n-Type or p-Type?
    Hijazi H, Monier G, Gil E, Trassoudaine A, Bougerol C, Leroux C, Castellucci D, Robert-Goumet C, Hoggan PE, André Y, Isik Goktas N, LaPierre RR, Dubrovskii VG.
    Nano Lett; 2019 Jul 10; 19(7):4498-4504. PubMed ID: 31203632
    [Abstract] [Full Text] [Related]

  • 2. Oscillations of As Concentration and Electron-to-Hole Ratio in Si-Doped GaAs Nanowires.
    Dubrovskii VG, Hijazi H.
    Nanomaterials (Basel); 2020 Apr 27; 10(5):. PubMed ID: 32349326
    [Abstract] [Full Text] [Related]

  • 3. n-Type Doping of Vapor-Liquid-Solid Grown GaAs Nanowires.
    Gutsche C, Lysov A, Regolin I, Blekker K, Prost W, Tegude FJ.
    Nanoscale Res Lett; 2011 Dec 27; 6(1):65. PubMed ID: 27502686
    [Abstract] [Full Text] [Related]

  • 4. Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy.
    Wang CY, Hong YC, Ko ZJ, Su YW, Huang JH.
    Nanoscale Res Lett; 2017 Dec 27; 12(1):290. PubMed ID: 28438011
    [Abstract] [Full Text] [Related]

  • 5. Growth of long III-As NWs by hydride vapor phase epitaxy.
    Gil E, Andre Y.
    Nanotechnology; 2021 Apr 16; 32(16):162002. PubMed ID: 33434903
    [Abstract] [Full Text] [Related]

  • 6. Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy.
    Dong Z, André Y, Dubrovskii VG, Bougerol C, Leroux C, Ramdani MR, Monier G, Trassoudaine A, Castelluci D, Gil E.
    Nanotechnology; 2017 Mar 24; 28(12):125602. PubMed ID: 28140362
    [Abstract] [Full Text] [Related]

  • 7. A Novel Growth Method To Improve the Quality of GaAs Nanowires Grown by Ga-Assisted Chemical Beam Epitaxy.
    García Núñez C, Braña AF, López N, García BJ.
    Nano Lett; 2018 Jun 13; 18(6):3608-3615. PubMed ID: 29739187
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  • 9. Formation Mechanism of Twinning Superlattices in Doped GaAs Nanowires.
    Isik Goktas N, Sokolovskii A, Dubrovskii VG, LaPierre RR.
    Nano Lett; 2020 May 13; 20(5):3344-3351. PubMed ID: 32239956
    [Abstract] [Full Text] [Related]

  • 10. Three-fold Symmetric Doping Mechanism in GaAs Nanowires.
    Dastjerdi MHT, Fiordaliso EM, Leshchenko ED, Akhtari-Zavareh A, Kasama T, Aagesen M, Dubrovskii VG, LaPierre RR.
    Nano Lett; 2017 Oct 11; 17(10):5875-5882. PubMed ID: 28903563
    [Abstract] [Full Text] [Related]

  • 11. Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium.
    Kim H, Ren D, Farrell AC, Huffaker DL.
    Nanotechnology; 2018 Feb 23; 29(8):085601. PubMed ID: 29300185
    [Abstract] [Full Text] [Related]

  • 12. Morphology- and orientation-controlled gallium arsenide nanowires on silicon substrates.
    Ihn SG, Song JI, Kim TW, Leem DS, Lee T, Lee SG, Koh EK, Song K.
    Nano Lett; 2007 Jan 23; 7(1):39-44. PubMed ID: 17212437
    [Abstract] [Full Text] [Related]

  • 13. Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: ab initio simulations supporting center nucleation.
    André Y, Lekhal K, Hoggan P, Avit G, Cadiz F, Rowe A, Paget D, Petit E, Leroux C, Trassoudaine A, Ramdani MR, Monier G, Colas D, Ajib R, Castelluci D, Gil E.
    J Chem Phys; 2014 May 21; 140(19):194706. PubMed ID: 24852556
    [Abstract] [Full Text] [Related]

  • 14. Fluctuating potentials in GaAs:Si nanowires: critical reduction of the influence of polytypism on the electronic structure.
    Ben Sedrine N, Ribeiro-Andrade R, Gustafsson A, Soares MR, Bourgard J, Teixeira JP, Salomé PMP, Correia MR, Moreira MVB, De Oliveira AG, González JC, Leitão JP.
    Nanoscale; 2018 Feb 22; 10(8):3697-3708. PubMed ID: 29388656
    [Abstract] [Full Text] [Related]

  • 15. Growth of stacking-faults-free zinc blende GaAs nanowires on Si substrate by using AlGaAs/GaAs buffer layers.
    Huang H, Ren X, Ye X, Guo J, Wang Q, Yang Y, Cai S, Huang Y.
    Nano Lett; 2010 Jan 22; 10(1):64-8. PubMed ID: 20000817
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  • 17. All zinc-blende GaAs/(Ga,Mn)As core-shell nanowires with ferromagnetic ordering.
    Yu X, Wang H, Pan D, Zhao J, Misuraca J, von Molnár S, Xiong P.
    Nano Lett; 2013 Apr 10; 13(4):1572-7. PubMed ID: 23517546
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  • 20. Modulation doping of GaAs/AlGaAs core-shell nanowires with effective defect passivation and high electron mobility.
    Boland JL, Conesa-Boj S, Parkinson P, Tütüncüoglu G, Matteini F, Rüffer D, Casadei A, Amaduzzi F, Jabeen F, Davies CL, Joyce HJ, Herz LM, Fontcuberta i Morral A, Johnston MB.
    Nano Lett; 2015 Feb 11; 15(2):1336-42. PubMed ID: 25602841
    [Abstract] [Full Text] [Related]

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