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182 related items for PubMed ID: 31374165
1. Ultrahigh Hole Mobility of Sn-Catalyzed GaSb Nanowires for High Speed Infrared Photodetectors. Sun J, Peng M, Zhang Y, Zhang L, Peng R, Miao C, Liu D, Han M, Feng R, Ma Y, Dai Y, He L, Shan C, Pan A, Hu W, Yang ZX. Nano Lett; 2019 Sep 11; 19(9):5920-5929. PubMed ID: 31374165 [Abstract] [Full Text] [Related]
3. Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, ⟨111⟩-Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition. Yang ZX, Liu L, Yip S, Li D, Shen L, Zhou Z, Han N, Hung TF, Pun EY, Wu X, Song A, Ho JC. ACS Nano; 2017 Apr 25; 11(4):4237-4246. PubMed ID: 28355076 [Abstract] [Full Text] [Related]
4. Crystalline GaSb nanowires synthesized on amorphous substrates: from the formation mechanism to p-channel transistor applications. Yang ZX, Wang F, Han N, Lin H, Cheung HY, Fang M, Yip S, Hung T, Wong CY, Ho JC. ACS Appl Mater Interfaces; 2013 Nov 13; 5(21):10946-52. PubMed ID: 24107082 [Abstract] [Full Text] [Related]
9. Surfactant-assisted chemical vapour deposition of high-performance small-diameter GaSb nanowires. Yang ZX, Han N, Fang M, Lin H, Cheung HY, Yip S, Wang EJ, Hung T, Wong CY, Ho JC. Nat Commun; 2014 Oct 16; 5():5249. PubMed ID: 25319499 [Abstract] [Full Text] [Related]
13. Sn-catalyzed synthesis of SnO2 nanowires and their optoelectronic characteristics. Luo LB, Liang FX, Jie JS. Nanotechnology; 2011 Dec 02; 22(48):485701. PubMed ID: 22056680 [Abstract] [Full Text] [Related]
14. Two-step fabrication of self-catalyzed Ga-based semiconductor nanowires on Si by molecular-beam epitaxy. Yu X, Li L, Wang H, Xiao J, Shen C, Pan D, Zhao J. Nanoscale; 2016 May 19; 8(20):10615-21. PubMed ID: 27194599 [Abstract] [Full Text] [Related]
16. Chemical Vapor Deposition Growth of High Crystallinity Sb2 Se3 Nanowire with Strong Anisotropy for Near-Infrared Photodetectors. Ma Z, Chai S, Feng Q, Li L, Li X, Huang L, Liu D, Sun J, Jiang R, Zhai T, Xu H. Small; 2019 Mar 19; 15(9):e1805307. PubMed ID: 30706663 [Abstract] [Full Text] [Related]
18. Gradients of Be-dopant concentration in self-catalyzed GaAs nanowires. Rizzo Piton M, Koivusalo E, Hakkarainen T, Galeti HVA, De Giovanni Rodrigues A, Talmila S, Souto S, Lupo D, Galvão Gobato Y, Guina M. Nanotechnology; 2019 Aug 16; 30(33):335709. PubMed ID: 30995612 [Abstract] [Full Text] [Related]