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Journal Abstract Search

350 related items for PubMed ID: 31584254

  • 1. Amorphous IGZO TFT with High Mobility of ∼70 cm2/(V s) via Vertical Dimension Control Using PEALD.
    Sheng J, Hong T, Lee HM, Kim K, Sasase M, Kim J, Hosono H, Park JS.
    ACS Appl Mater Interfaces; 2019 Oct 30; 11(43):40300-40309. PubMed ID: 31584254
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  • 2. Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack.
    Cho MH, Choi CH, Seul HJ, Cho HC, Jeong JK.
    ACS Appl Mater Interfaces; 2021 Apr 14; 13(14):16628-16640. PubMed ID: 33793185
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  • 3. Selectively Nitrogen Doped ALD-IGZO TFTs with Extremely High Mobility and Reliability.
    Kim DG, Choi H, Kim YS, Lee DH, Oh HJ, Lee JH, Kim J, Lee S, Kuh B, Kim T, Kim HY, Park JS.
    ACS Appl Mater Interfaces; 2023 Jul 05; 15(26):31652-31663. PubMed ID: 37350067
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  • 5. Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y2O3 with Ozone.
    Jung H, Kim WH, Park BE, Woo WJ, Oh IK, Lee SJ, Kim YC, Myoung JM, Gatineau S, Dussarrat C, Kim H.
    ACS Appl Mater Interfaces; 2018 Jan 17; 10(2):2143-2150. PubMed ID: 29277990
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  • 7. Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.
    Shin KY, Tak YJ, Kim WG, Hong S, Kim HJ.
    ACS Appl Mater Interfaces; 2017 Apr 19; 9(15):13278-13285. PubMed ID: 28299924
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  • 8. Photo-induced Reactive Oxygen Species Activation for Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Sodium Hypochlorite.
    Kim WG, Tak YJ, Yoo H, Kim HT, Park JW, Choi DH, Kim HJ.
    ACS Appl Mater Interfaces; 2021 Sep 22; 13(37):44531-44540. PubMed ID: 34505504
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  • 9. Organic/Inorganic Hybrid Buffer in InGaZnO Transistors under Repetitive Bending Stress for High Electrical and Mechanical Stability.
    Han KL, Han JH, Kim BS, Jeong HJ, Choi JM, Hwang JE, Oh S, Park JS.
    ACS Appl Mater Interfaces; 2020 Jan 22; 12(3):3784-3791. PubMed ID: 31878779
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  • 14. Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers.
    Zhang Y, Xie H, Dong C.
    Micromachines (Basel); 2019 Nov 14; 10(11):. PubMed ID: 31739504
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  • 19. High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric.
    Shao Y, Wu X, Zhang MN, Liu WJ, Ding SJ.
    Nanoscale Res Lett; 2019 Apr 02; 14(1):122. PubMed ID: 30941527
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  • 20. The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor.
    Park S, Bang S, Lee S, Park J, Ko Y, Jeon H.
    J Nanosci Nanotechnol; 2011 Jul 02; 11(7):6029-33. PubMed ID: 22121652
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