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258 related items for PubMed ID: 31791119
1. Suppression of Interfacial Disorders in Solution-Processed Metal Oxide Thin-Film Transistors by Mg Doping. Heo JS, Jeon SP, Kim I, Lee W, Kim YH, Park SK. ACS Appl Mater Interfaces; 2019 Dec 26; 11(51):48054-48061. PubMed ID: 31791119 [Abstract] [Full Text] [Related]
2. Enhanced Interfacial Integrity of Amorphous Oxide Thin-Film Transistors by Elemental Diffusion of Ternary Oxide Semiconductors. Jeon SP, Heo JS, Kim I, Kim YH, Park SK. ACS Appl Mater Interfaces; 2020 Dec 30; 12(52):57996-58004. PubMed ID: 33332113 [Abstract] [Full Text] [Related]
8. Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors. Je SY, Son BG, Kim HG, Park MY, Do LM, Choi R, Jeong JK. ACS Appl Mater Interfaces; 2014 Nov 12; 6(21):18693-703. PubMed ID: 25285585 [Abstract] [Full Text] [Related]
10. Fully solution-induced high performance indium oxide thin film transistors with ZrO x high-k gate dielectrics. Zhu L, He G, Lv J, Fortunato E, Martins R. RSC Adv; 2018 May 03; 8(30):16788-16799. PubMed ID: 35540525 [Abstract] [Full Text] [Related]
11. Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric. Park JH, Yoo YB, Lee KH, Jang WS, Oh JY, Chae SS, Baik HK. ACS Appl Mater Interfaces; 2013 Jan 23; 5(2):410-7. PubMed ID: 23267443 [Abstract] [Full Text] [Related]
14. Atmospheric-pressure plasma treatment toward high-quality solution-processed aluminum oxide gate dielectric films in thin-film transistors. Park J, Cho NK, Lee SE, Lee EG, Lee J, Im C, Na HJ, Kim YS. Nanotechnology; 2019 Dec 06; 30(49):495702. PubMed ID: 31476746 [Abstract] [Full Text] [Related]
15. Facile and environmentally friendly solution-processed aluminum oxide dielectric for low-temperature, high-performance oxide thin-film transistors. Xu W, Wang H, Xie F, Chen J, Cao H, Xu JB. ACS Appl Mater Interfaces; 2015 Mar 18; 7(10):5803-10. PubMed ID: 25679286 [Abstract] [Full Text] [Related]