These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


Pubmed for Handhelds

PUBMED FOR HANDHELDS

Journal Abstract Search

405 related items for PubMed ID: 31878779

  • 1.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 2.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 3.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 4. Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers.
    Zhang W, Fan Z, Shen A, Dong C.
    Micromachines (Basel); 2021 Dec 12; 12(12):. PubMed ID: 34945401
    [Abstract] [Full Text] [Related]

  • 5.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 6.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 7.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 8.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 9. Post-annealing effect of low temperature atomic layer deposited Al2O3on the top gate IGZO TFT.
    Zheng S, Lv S, Wang C, Li Z, Dong L, Xin Q, Song A, Zhang J, Li Y.
    Nanotechnology; 2024 Jan 25; 35(15):. PubMed ID: 38198735
    [Abstract] [Full Text] [Related]

  • 10. Mechanically Durable Organic/High-k Inorganic Hybrid Gate Dielectrics Enabled by Plasma-Polymerization of PTFE for Flexible Electronics.
    Kim GI, Jung J, Min WK, Kim MS, Jung S, Choi DH, Chung J, Kim HJ.
    ACS Appl Mater Interfaces; 2022 Jun 22; 14(24):28085-28096. PubMed ID: 35680562
    [Abstract] [Full Text] [Related]

  • 11.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 12.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 13.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 14. Amorphous IGZO TFT with High Mobility of ∼70 cm2/(V s) via Vertical Dimension Control Using PEALD.
    Sheng J, Hong T, Lee HM, Kim K, Sasase M, Kim J, Hosono H, Park JS.
    ACS Appl Mater Interfaces; 2019 Oct 30; 11(43):40300-40309. PubMed ID: 31584254
    [Abstract] [Full Text] [Related]

  • 15.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 16. Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors.
    Zhou Y, Dong C.
    Micromachines (Basel); 2018 Nov 17; 9(11):. PubMed ID: 30453615
    [Abstract] [Full Text] [Related]

  • 17. Electrical Properties of Amorphous Indium Zinc Tin Oxide Thin Film Transistor with Y₂O₃ Gate Dielectric.
    Jauhari IM, Bak YG, Noviyana I, Putri MA, Lee JA, Heo YW, Lee HY.
    J Nanosci Nanotechnol; 2021 Mar 01; 21(3):1748-1753. PubMed ID: 33404442
    [Abstract] [Full Text] [Related]

  • 18.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 19.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 20. Ultra-dry air plasma treatment for enhancing the dielectric properties of Al2O3-GPTMS-PMMA hybrid dielectric gate layers in a-IGZO TFT applications.
    Meza-Arroyo J, Syamala Rao MG, Chandra Sekhar Reddy K, Sánchez-Martinez A, Rodríguez-López O, Quevedo-López M, Ramírez-Bon R.
    Nanotechnology; 2021 Mar 26; 32(13):135203. PubMed ID: 33302261
    [Abstract] [Full Text] [Related]

    Page: [Next] [New Search]
    of 21.