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Journal Abstract Search

489 related items for PubMed ID: 32126639

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  • 4. Effects of Al Addition on Resistive-Switching Characteristics of Solution Processed Zn-Sn-O ReRAMs.
    Kim TW, Cho WJ.
    J Nanosci Nanotechnol; 2019 Oct 01; 19(10):6099-6105. PubMed ID: 31026916
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  • 5. Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers.
    Zhang Y, Xie H, Dong C.
    Micromachines (Basel); 2019 Nov 14; 10(11):. PubMed ID: 31739504
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  • 6. Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition.
    Yoon SM, Seong NJ, Choi K, Seo GH, Shin WC.
    ACS Appl Mater Interfaces; 2017 Jul 12; 9(27):22676-22684. PubMed ID: 28653825
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  • 8. Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array.
    Kim HJ, Han CJ, Yoo B, Lee J, Lee K, Lee KH, Oh MS.
    Micromachines (Basel); 2020 May 18; 11(5):. PubMed ID: 32443447
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  • 10. Enhanced Electrical Properties and Stability in IGZO TFTs via Low-Temperature Activation with MgOx Layer.
    Kim MS, Kim HT, Jung S, Kim YW, Lee S, Kim HJ.
    ACS Appl Mater Interfaces; 2024 Aug 07; 16(31):41127-41133. PubMed ID: 39058501
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  • 15. Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors.
    Li ZY, Song SM, Wang WX, Gong JH, Tong Y, Dai MJ, Lin SS, Yang TL, Sun H.
    Nanotechnology; 2022 Oct 28; 34(2):. PubMed ID: 36219884
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  • 16. Improvement of On/Off Current Ratio of Amorphous In-Ga-Zn-O Thin-Film Transistor with Off-Planed Source/Drain Electrodes.
    Kang MS, Cho WJ.
    J Nanosci Nanotechnol; 2019 Mar 01; 19(3):1345-1349. PubMed ID: 30469186
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  • 17. Photo-induced Reactive Oxygen Species Activation for Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Sodium Hypochlorite.
    Kim WG, Tak YJ, Yoo H, Kim HT, Park JW, Choi DH, Kim HJ.
    ACS Appl Mater Interfaces; 2021 Sep 22; 13(37):44531-44540. PubMed ID: 34505504
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  • 18. Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.
    Xiao X, Zhang L, Shao Y, Zhou X, He H, Zhang S.
    ACS Appl Mater Interfaces; 2018 Aug 08; 10(31):25850-25857. PubMed ID: 29235839
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