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Journal Abstract Search

489 related items for PubMed ID: 32126639

  • 21. High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric.
    Shao Y, Wu X, Zhang MN, Liu WJ, Ding SJ.
    Nanoscale Res Lett; 2019 Apr 02; 14(1):122. PubMed ID: 30941527
    [Abstract] [Full Text] [Related]

  • 22. Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.
    Shin KY, Tak YJ, Kim WG, Hong S, Kim HJ.
    ACS Appl Mater Interfaces; 2017 Apr 19; 9(15):13278-13285. PubMed ID: 28299924
    [Abstract] [Full Text] [Related]

  • 23. Study of Atmospheric-Pressure Plasma Enhanced Chemical Vapor Deposition Fabricated Indium Gallium Zinc Oxide Thin Film Transistors with In-Situ Hydrogen Plasma Treatment.
    Chen YM, Wu CH, Chang KM, Zhang YX, Xu N, Yu TY, Chin A.
    J Nanosci Nanotechnol; 2020 Jul 01; 20(7):4110-4113. PubMed ID: 31968427
    [Abstract] [Full Text] [Related]

  • 24. Dual active layer a-IGZO TFT via homogeneous conductive layer formation by photochemical H-doping.
    Jeong SK, Kim MH, Lee SY, Seo H, Choi DK.
    Nanoscale Res Lett; 2014 Jul 01; 9(1):619. PubMed ID: 25435832
    [Abstract] [Full Text] [Related]

  • 25. Solution-Based Indium-Zinc Oxide/Indium-Gallium-Zinc Oxide Double-Channel Thin-Film Transistors with Incorporated Hydrogen Peroxide.
    Jeon W, Choi P, Park A, Lee D, Choi D, Lee S, Choi B.
    J Nanosci Nanotechnol; 2020 Nov 01; 20(11):6643-6647. PubMed ID: 32604489
    [Abstract] [Full Text] [Related]

  • 26. The Effect of Microwave Annealing of Reliability Characteristics on Amorphous IGZO Thin Film Transistors.
    Wu CH, Chang KM, Chen YM, Zhang YX, Cheng CY.
    J Nanosci Nanotechnol; 2019 Apr 01; 19(4):2189-2192. PubMed ID: 30486965
    [Abstract] [Full Text] [Related]

  • 27. Effect of Simplified-Single-Step Microwave Annealing in O₂ Ambient for High Performance Solution-Processed In-Ga-Zn-O Thin Film Transistors.
    Cho SK, Cho WJ.
    J Nanosci Nanotechnol; 2020 Jul 01; 20(7):4163-4169. PubMed ID: 31968435
    [Abstract] [Full Text] [Related]

  • 28. Influence of source and drain contacts on the properties of indium-gallium-zinc-oxide thin-film transistors based on amorphous carbon nanofilm as barrier layer.
    Luo D, Xu H, Zhao M, Li M, Xu M, Zou J, Tao H, Wang L, Peng J.
    ACS Appl Mater Interfaces; 2015 Feb 18; 7(6):3633-40. PubMed ID: 25619280
    [Abstract] [Full Text] [Related]

  • 29. Graded Channel Junctionless InGaZnO Thin-Film Transistors with Both High Transporting Properties and Good Bias Stress Stability.
    Liu J, Guo J, Yang W, Wang C, Yuan B, Liu J, Wu Z, Zhang Q, Liu D, Chen H, Yu Y, Liu S, Shao G, Yao Z.
    ACS Appl Mater Interfaces; 2020 Sep 30; 12(39):43950-43957. PubMed ID: 32886486
    [Abstract] [Full Text] [Related]

  • 30. Performance Improvement of In-Ga-Zn Oxide Thin-Film Transistors by Excimer Laser Annealing.
    Zhang X, Li Y, Li Y, Xie X, Yin L.
    Micromachines (Basel); 2024 Jan 31; 15(2):. PubMed ID: 38398954
    [Abstract] [Full Text] [Related]

  • 31. Electrical Properties of Amorphous Indium Zinc Tin Oxide Thin Film Transistor with Y₂O₃ Gate Dielectric.
    Jauhari IM, Bak YG, Noviyana I, Putri MA, Lee JA, Heo YW, Lee HY.
    J Nanosci Nanotechnol; 2021 Mar 01; 21(3):1748-1753. PubMed ID: 33404442
    [Abstract] [Full Text] [Related]

  • 32. Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature.
    Yu BS, Jeon JY, Kang BC, Lee W, Kim YH, Ha TJ.
    Sci Rep; 2019 Jun 10; 9(1):8416. PubMed ID: 31182751
    [Abstract] [Full Text] [Related]

  • 33. Comparative Study of Atomic Layer Deposited Indium-Based Oxide Transistors with a Fermi Energy Level-Engineered Heterojunction Structure Channel through a Cation Combinatorial Approach.
    Cho MH, Choi CH, Jeong JK.
    ACS Appl Mater Interfaces; 2022 Apr 27; 14(16):18646-18661. PubMed ID: 35426670
    [Abstract] [Full Text] [Related]

  • 34. A Comparative Study of E-Beam Deposited Gate Dielectrics on Channel Width-Dependent Performance and Reliability of a-IGZO Thin-Film Transistors.
    Wu G, Sahoo AK, Chen DW, Chang JW.
    Materials (Basel); 2018 Dec 09; 11(12):. PubMed ID: 30544867
    [Abstract] [Full Text] [Related]

  • 35. Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses.
    Wang D, Zhao W, Li H, Furuta M.
    Materials (Basel); 2018 Apr 05; 11(4):. PubMed ID: 29621154
    [Abstract] [Full Text] [Related]

  • 36. A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °C.
    Peng C, Huang H, Xu M, Chen L, Li X, Zhang J.
    Nanomaterials (Basel); 2022 Nov 16; 12(22):. PubMed ID: 36432306
    [Abstract] [Full Text] [Related]

  • 37.
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  • 38. Effect of the electrode materials on the drain-bias stress instabilities of In-Ga-Zn-O thin-film transistors.
    Bak JY, Yang S, Ryu MK, Ko Park SH, Hwang CS, Yoon SM.
    ACS Appl Mater Interfaces; 2012 Oct 24; 4(10):5369-74. PubMed ID: 22974265
    [Abstract] [Full Text] [Related]

  • 39. Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors.
    Lee H, Chang KS, Tak YJ, Jung TS, Park JW, Kim WG, Chung J, Jeong CB, Kim HJ.
    Sci Rep; 2016 Oct 11; 6():35044. PubMed ID: 27725695
    [Abstract] [Full Text] [Related]

  • 40. The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer.
    Shin Y, Kim ST, Kim K, Kim MY, Oh S, Jeong JK.
    Sci Rep; 2017 Sep 07; 7(1):10885. PubMed ID: 28883475
    [Abstract] [Full Text] [Related]

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