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221 related items for PubMed ID: 32427905
1. Effects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowires. Balagula RM, Jansson M, Yukimune M, Stehr JE, Ishikawa F, Chen WM, Buyanova IA. Sci Rep; 2020 May 19; 10(1):8216. PubMed ID: 32427905 [Abstract] [Full Text] [Related]
3. Suppression of non-radiative surface recombination by N incorporation in GaAs/GaNAs core/shell nanowires. Chen SL, Chen WM, Ishikawa F, Buyanova IA. Sci Rep; 2015 Jun 23; 5():11653. PubMed ID: 26100755 [Abstract] [Full Text] [Related]
4. GaAs/GaAsPBi core-shell nanowires grown by molecular beam epitaxy. Himwas C, Yordsri V, Thanachayanont C, Tchernycheva M, Panyakeow S, Kanjanachuchai S. Nanotechnology; 2021 Dec 06; 33(9):. PubMed ID: 34781278 [Abstract] [Full Text] [Related]
5. Polytypism in GaAs/GaNAs core-shell nanowires. Yukimune M, Fujiwara R, Mita T, Ishikawa F. Nanotechnology; 2020 Dec 11; 31(50):505608. PubMed ID: 32937605 [Abstract] [Full Text] [Related]
6. Epitaxial GaAs/AlGaAs core-multishell nanowires with enhanced photoluminescence lifetime. Zhou C, Zhang XT, Zheng K, Chen PP, Matsumura S, Lu W, Zou J. Nanoscale; 2019 Apr 04; 11(14):6859-6865. PubMed ID: 30912781 [Abstract] [Full Text] [Related]
7. Effects of growth temperature and thermal annealing on optical quality of GaNAs nanowires emitting in the near-infrared spectral range. Stehr JE, Balagula RM, Jansson M, Yukimune M, Fujiwara R, Ishikawa F, Chen WM, Buyanova IA. Nanotechnology; 2020 Jan 31; 31(6):065702. PubMed ID: 31658456 [Abstract] [Full Text] [Related]
8. Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy. Park KW, Park CY, Ravindran S, Jang JS, Jo YR, Kim BJ, Lee YT. Nanoscale Res Lett; 2014 Jan 31; 9(1):626. PubMed ID: 25489280 [Abstract] [Full Text] [Related]
9. Position-controlled uniform GaAs nanowires on silicon using nanoimprint lithography. Munshi AM, Dheeraj DL, Fauske VT, Kim DC, Huh J, Reinertsen JF, Ahtapodov L, Lee KD, Heidari B, van Helvoort AT, Fimland BO, Weman H. Nano Lett; 2014 Feb 12; 14(2):960-6. PubMed ID: 24467394 [Abstract] [Full Text] [Related]
10. Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core-Multishell Nanowires. Stettner T, Thurn A, Döblinger M, Hill MO, Bissinger J, Schmiedeke P, Matich S, Kostenbader T, Ruhstorfer D, Riedl H, Kaniber M, Lauhon LJ, Finley JJ, Koblmüller G. Nano Lett; 2018 Oct 10; 18(10):6292-6300. PubMed ID: 30185051 [Abstract] [Full Text] [Related]
11. Determination of the Optimal Shell Thickness for Self-Catalyzed GaAs/AlGaAs Core-Shell Nanowires on Silicon. Songmuang R, Giang le TT, Bleuse J, Den Hertog M, Niquet YM, Dang le S, Mariette H. Nano Lett; 2016 Jun 08; 16(6):3426-33. PubMed ID: 27081785 [Abstract] [Full Text] [Related]
12. Molecular beam epitaxial growth of dilute nitride GaNAs and GaInNAs nanowires. Yukimune M, Fujiwara R, Mita T, Tsuda N, Natsui J, Shimizu Y, Jansson M, Balagula R, Chen WM, Buyanova IA, Ishikawa F. Nanotechnology; 2019 Jun 14; 30(24):244002. PubMed ID: 30794991 [Abstract] [Full Text] [Related]
13. Dilute Nitride Nanowire Lasers Based on a GaAs/GaNAs Core/Shell Structure. Chen S, Jansson M, Stehr JE, Huang Y, Ishikawa F, Chen WM, Buyanova IA. Nano Lett; 2017 Mar 08; 17(3):1775-1781. PubMed ID: 28170267 [Abstract] [Full Text] [Related]