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Journal Abstract Search

320 related items for PubMed ID: 32931241

  • 1. Ferroelectric-Modulated MoS2 Field-Effect Transistors as Multilevel Nonvolatile Memory.
    Xu L, Duan Z, Zhang P, Wang X, Zhang J, Shang L, Jiang K, Li Y, Zhu L, Gong Y, Hu Z, Chu J.
    ACS Appl Mater Interfaces; 2020 Oct 07; 12(40):44902-44911. PubMed ID: 32931241
    [Abstract] [Full Text] [Related]

  • 2. Multilevel Resistance Switching Memory in La2/3Ba1/3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (011) Heterostructure by Combined Straintronics-Spintronics.
    Zhou W, Xiong Y, Zhang Z, Wang D, Tan W, Cao Q, Qian Z, Du Y.
    ACS Appl Mater Interfaces; 2016 Mar 02; 8(8):5424-31. PubMed ID: 26846130
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  • 4. Integration of Oxide Semiconductor Thin Films with Relaxor-Based Ferroelectric Single Crystals with Large Reversible and Nonvolatile Modulation of Electronic Properties.
    Xu ZX, Yan JM, Xu M, Guo L, Chen TW, Gao GY, Dong SN, Zheng M, Zhang JX, Wang Y, Li XG, Luo HS, Zheng RK.
    ACS Appl Mater Interfaces; 2018 Sep 26; 10(38):32809-32817. PubMed ID: 30156403
    [Abstract] [Full Text] [Related]

  • 5. Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory.
    Sakai S, Takahashi M.
    Materials (Basel); 2010 Nov 18; 3(11):4950-4964. PubMed ID: 28883363
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  • 6. Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in HfO2-Based Ferroelectric Field-Effect Transistors.
    Dai S, Yang Q, Zeng B, Zheng S, Zhong X, Xiang J, Gao J, Zhao J, Liao J, Liao M, Zhou Y.
    ACS Appl Mater Interfaces; 2022 Nov 16; 14(45):51459-51467. PubMed ID: 36318591
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  • 8. Reliable Nonvolatile Memory Black Phosphorus Ferroelectric Field-Effect Transistors with van der Waals Buffer.
    Yan S, Huang H, Xie Z, Ye G, Li XX, Taniguchi T, Watanabe K, Han Z, Chen X, Wang J, Chen JH.
    ACS Appl Mater Interfaces; 2019 Nov 13; 11(45):42358-42364. PubMed ID: 31633328
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  • 10. Two-Dimensional CIPS-InSe van der Waal Heterostructure Ferroelectric Field Effect Transistor for Nonvolatile Memory Applications.
    Singh P, Baek S, Yoo HH, Niu J, Park JH, Lee S.
    ACS Nano; 2022 Apr 26; 16(4):5418-5426. PubMed ID: 35234041
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  • 11. Gate-Coupling-Enabled Robust Hysteresis for Nonvolatile Memory and Programmable Rectifier in Van der Waals Ferroelectric Heterojunctions.
    Huang W, Wang F, Yin L, Cheng R, Wang Z, Sendeku MG, Wang J, Li N, Yao Y, He J.
    Adv Mater; 2020 Apr 26; 32(14):e1908040. PubMed ID: 32080924
    [Abstract] [Full Text] [Related]

  • 12. Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional van der Waals Heterostructure.
    Si M, Liao PY, Qiu G, Duan Y, Ye PD.
    ACS Nano; 2018 Jul 24; 12(7):6700-6705. PubMed ID: 29944829
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  • 16. Polarization-tunable interfacial properties in monolayer-MoS2 transistors integrated with ferroelectric BiAlO3(0001) polar surfaces.
    Yuan J, Dai JQ, Liu YZ, Zhao MW.
    Phys Chem Chem Phys; 2023 Sep 27; 25(37):25177-25190. PubMed ID: 37712428
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  • 17. Nonvolatile and Reversible Ferroelectric Control of Electronic Properties of Bi2Te3 Topological Insulator Thin Films Grown on Pb(Mg1/3Nb2/3)O3-PbTiO3 Single Crystals.
    Yan JM, Xu ZX, Chen TW, Xu M, Zhang C, Zhao XW, Liu F, Guo L, Yan SY, Gao GY, Wang FF, Zhang JX, Dong SN, Li XG, Luo HS, Zhao W, Zheng RK.
    ACS Appl Mater Interfaces; 2019 Mar 06; 11(9):9548-9556. PubMed ID: 30724082
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  • 18. Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP2S6 and InZnO.
    Ryu H, Kang J, Park M, Bae B, Zhao Z, Rakheja S, Lee K, Zhu W.
    ACS Appl Mater Interfaces; 2023 Nov 22; 15(46):53671-53677. PubMed ID: 37947841
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  • 20. Time-dependent transport characteristics of graphene tuned by ferroelectric polarization and interface charge trapping.
    Jie W, Hao J.
    Nanoscale; 2017 Dec 21; 10(1):328-335. PubMed ID: 29214268
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