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Journal Abstract Search

370 related items for PubMed ID: 33255690

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  • 3. Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack.
    Cho MH, Choi CH, Seul HJ, Cho HC, Jeong JK.
    ACS Appl Mater Interfaces; 2021 Apr 14; 13(14):16628-16640. PubMed ID: 33793185
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  • 4. High-Resolution Inkjet-Printed Oxide Thin-Film Transistors with a Self-Aligned Fine Channel Bank Structure.
    Zhang Q, Shao S, Chen Z, Pecunia V, Xia K, Zhao J, Cui Z.
    ACS Appl Mater Interfaces; 2018 May 09; 10(18):15847-15854. PubMed ID: 29648790
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  • 5. Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors.
    Stallings K, Smith J, Chen Y, Zeng L, Wang B, Di Carlo G, Bedzyk MJ, Facchetti A, Marks TJ.
    ACS Appl Mater Interfaces; 2021 Apr 07; 13(13):15399-15408. PubMed ID: 33779161
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  • 6. Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature.
    Yu BS, Jeon JY, Kang BC, Lee W, Kim YH, Ha TJ.
    Sci Rep; 2019 Jun 10; 9(1):8416. PubMed ID: 31182751
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  • 15. Semi-transparent a-IGZO thin-film transistors with polymeric gate dielectric.
    Hyung GW, Wang JX, Li ZH, Koo JR, Kwon SJ, Cho ES, Kim YK.
    J Nanosci Nanotechnol; 2013 Jun 10; 13(6):4052-5. PubMed ID: 23862447
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  • 17. Teflon/SiO₂ Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process.
    Fan CL, Shang MC, Li BJ, Lin YZ, Wang SJ, Lee WD, Hung BR.
    Materials (Basel); 2015 Apr 13; 8(4):1704-1713. PubMed ID: 28788026
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