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Journal Abstract Search

200 related items for PubMed ID: 33260908

  • 1. Influence of Oxygen Flow Rate on Channel Width Dependent Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors.
    Wu G, Sahoo AK.
    Nanomaterials (Basel); 2020 Nov 27; 10(12):. PubMed ID: 33260908
    [Abstract] [Full Text] [Related]

  • 2. Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistors.
    Han Y, Lee DH, Cho ES, Kwon SJ, Yoo H.
    Micromachines (Basel); 2023 Jul 08; 14(7):. PubMed ID: 37512704
    [Abstract] [Full Text] [Related]

  • 3. Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors.
    Li ZY, Song SM, Wang WX, Gong JH, Tong Y, Dai MJ, Lin SS, Yang TL, Sun H.
    Nanotechnology; 2022 Oct 28; 34(2):. PubMed ID: 36219884
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  • 4. A Comparative Study of E-Beam Deposited Gate Dielectrics on Channel Width-Dependent Performance and Reliability of a-IGZO Thin-Film Transistors.
    Wu G, Sahoo AK, Chen DW, Chang JW.
    Materials (Basel); 2018 Dec 09; 11(12):. PubMed ID: 30544867
    [Abstract] [Full Text] [Related]

  • 5. Vertically Graded Oxygen Deficiency for Improving Electrical Characteristics and Stability of Indium Gallium Zinc Oxide Thin-Film Transistors.
    Yoon CS, Kim HT, Kim MS, Yoo H, Park JW, Choi DH, Kim D, Kim HJ.
    ACS Appl Mater Interfaces; 2021 Jan 27; 13(3):4110-4116. PubMed ID: 33448781
    [Abstract] [Full Text] [Related]

  • 6. Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.
    Shin KY, Tak YJ, Kim WG, Hong S, Kim HJ.
    ACS Appl Mater Interfaces; 2017 Apr 19; 9(15):13278-13285. PubMed ID: 28299924
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  • 10. Performance Enhancement of Channel-Engineered Al-Zn-Sn-O Thin-Film Transistors with Highly Conductive In-Ga-Zn-O Buried Layer via Vacuum Rapid Thermal Annealing.
    Kim SH, Cho WJ.
    J Nanosci Nanotechnol; 2020 Aug 01; 20(8):4671-4677. PubMed ID: 32126639
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  • 11. Enhanced Electrical Properties and Stability in IGZO TFTs via Low-Temperature Activation with MgOx Layer.
    Kim MS, Kim HT, Jung S, Kim YW, Lee S, Kim HJ.
    ACS Appl Mater Interfaces; 2024 Aug 07; 16(31):41127-41133. PubMed ID: 39058501
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  • 13. Study of Atmospheric-Pressure Plasma Enhanced Chemical Vapor Deposition Fabricated Indium Gallium Zinc Oxide Thin Film Transistors with In-Situ Hydrogen Plasma Treatment.
    Chen YM, Wu CH, Chang KM, Zhang YX, Xu N, Yu TY, Chin A.
    J Nanosci Nanotechnol; 2020 Jul 01; 20(7):4110-4113. PubMed ID: 31968427
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  • 15. The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor.
    Park S, Bang S, Lee S, Park J, Ko Y, Jeon H.
    J Nanosci Nanotechnol; 2011 Jul 01; 11(7):6029-33. PubMed ID: 22121652
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  • 20. Intense Pulsed Light Annealing Process of Indium-Gallium-Zinc-Oxide Semiconductors via Flash White Light Combined with Deep-UV and Near-Infrared Drying for High-Performance Thin-Film Transistors.
    Moon CJ, Kim HS.
    ACS Appl Mater Interfaces; 2019 Apr 10; 11(14):13380-13388. PubMed ID: 30882197
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