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Journal Abstract Search

316 related items for PubMed ID: 33652819

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  • 4. Resistive switching behavior and multiple transmittance states in solution-processed tungsten oxide.
    Wu WT, Wu JJ, Chen JS.
    ACS Appl Mater Interfaces; 2011 Jul; 3(7):2616-21. PubMed ID: 21702504
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  • 6. Influences of electrode materials on the resistive memory switching properties of ZnOxS1-x:Mn thin films.
    Han Y, Chung I, Park S, Cho K, Kim S.
    J Nanosci Nanotechnol; 2013 Sep; 13(9):6208-11. PubMed ID: 24205630
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  • 9. Analysis of the Bipolar Resistive Switching Behavior of a Biocompatible Glucose Film for Resistive Random Access Memory.
    Park SP, Tak YJ, Kim HJ, Lee JH, Yoo H, Kim HJ.
    Adv Mater; 2018 Jun; 30(26):e1800722. PubMed ID: 29761552
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  • 10. Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITOX:SiO2 Thin Films on Resistive Random Access Memory Devices.
    Chen KH, Cheng CM, Wang NF, Kao MC.
    Nanomaterials (Basel); 2023 Jul 26; 13(15):. PubMed ID: 37570498
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  • 13. Preparation of Polyimide/Graphene Oxide Nanocomposite and Its Application to Nonvolatile Resistive Memory Device.
    Choi JY, Yu HC, Lee J, Jeon J, Im J, Jang J, Jin SW, Kim KK, Cho S, Chung CM.
    Polymers (Basel); 2018 Aug 11; 10(8):. PubMed ID: 30960826
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  • 18. Resistive Switching Memory Devices Based on Body Fluid of Bombyx mori L.
    Wang L, Wen D.
    Micromachines (Basel); 2019 Aug 16; 10(8):. PubMed ID: 31426438
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  • 19. Effects of a Nb nanopin electrode on the resistive random-access memory switching characteristics of NiO thin films.
    Ahn Y, Shin HW, Lee TH, Kim WH, Son JY.
    Nanoscale; 2018 Jul 19; 10(28):13443-13448. PubMed ID: 29972166
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