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369 related items for PubMed ID: 33687408
1. Biaxial strain, electric field and interlayer distance-tailored electronic structure and magnetic properties of two-dimensional g-C3N4/Li-adsorbed Cr2Ge2Te6 van der Waals heterostructures. Gao Y, Zhou B, Wang X. Phys Chem Chem Phys; 2021 Mar 18; 23(10):6171-6181. PubMed ID: 33687408 [Abstract] [Full Text] [Related]
3. Two-dimensional multiferroic RuClF/AgBiP2S6 van der Waals heterostructures with valley splitting properties and controllable magnetic anisotropy. Liu Z, Zhou B, Wang X. Phys Chem Chem Phys; 2024 Jun 26; 26(25):17869-17881. PubMed ID: 38887794 [Abstract] [Full Text] [Related]
5. Efficient band structure modulations in two-dimensional MnPSe3/CrSiTe3 van der Waals heterostructures. Pei Q, Wang X, Zou J, Mi W. Nanotechnology; 2018 May 25; 29(21):214001. PubMed ID: 29522421 [Abstract] [Full Text] [Related]
6. Lowering the Schottky barrier height of G/WSSe van der Waals heterostructures by changing the interlayer coupling and applying external biaxial strain. Zhang WX, Yin Y, He C. Phys Chem Chem Phys; 2020 Nov 25; 22(45):26231-26240. PubMed ID: 33174552 [Abstract] [Full Text] [Related]
8. Predicting Van der Waals Heterostructures by a Combined Machine Learning and Density Functional Theory Approach. Willhelm D, Wilson N, Arroyave R, Qian X, Cagin T, Pachter R, Qian X. ACS Appl Mater Interfaces; 2022 Jun 08; 14(22):25907-25919. PubMed ID: 35622945 [Abstract] [Full Text] [Related]
10. A design rule for two-dimensional van der Waals heterostructures with unconventional band alignments. Si Y, Wu HY, Lian JC, Huang WQ, Hu WY, Huang GF. Phys Chem Chem Phys; 2020 Feb 07; 22(5):3037-3047. PubMed ID: 31960006 [Abstract] [Full Text] [Related]
11. Strain and electric-field tunable valley states in 2D van der Waals MoTe2/WTe2 heterostructures. Zheng Z, Wang X, Mi W. J Phys Condens Matter; 2016 Dec 21; 28(50):505003. PubMed ID: 27783569 [Abstract] [Full Text] [Related]
12. Valley splitting and magnetic anisotropy in two-dimensional VI3/MSe2 (M = W, Mo) heterostructures. Fang X, Zhou B, Sun N, Fu L, Wang X. Phys Chem Chem Phys; 2022 Feb 16; 24(7):4374-4383. PubMed ID: 35112682 [Abstract] [Full Text] [Related]
13. Electrostatic gating dependent multiple band alignments in ferroelectric VS2/Ga2O3 van der Waals heterostructures. Zhu Y, Qu Z, Wang X, Zhang J, Wu Z, Xu Z, Yang F, Wang J, Dai Y. Phys Chem Chem Phys; 2023 Aug 30; 25(34):22711-22718. PubMed ID: 37606252 [Abstract] [Full Text] [Related]
14. Strain, electric-field and functionalization induced widely tunable electronic properties in MoS2/BC 3, /C 3 N and /[Formula: see text] van der Waals heterostructures. Bafekry A, Stampfl C, Ghergherehchi M. Nanotechnology; 2020 May 01; 31(29):295202. PubMed ID: 32272455 [Abstract] [Full Text] [Related]
18. First-principles calculations of the electronic properties of SiC-based bilayer and trilayer heterostructures. Li S, Sun M, Chou JP, Wei J, Xing H, Hu A. Phys Chem Chem Phys; 2018 Oct 03; 20(38):24726-24734. PubMed ID: 30225488 [Abstract] [Full Text] [Related]