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Journal Abstract Search

161 related items for PubMed ID: 33740774

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  • 4. Structural and electronic properties of liquid, amorphous, and supercooled liquid phases of In2Te5 from first-principles.
    Dragoni D, Bernasconi M.
    J Chem Phys; 2019 Oct 07; 151(13):134503. PubMed ID: 31594330
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  • 7. Aluminum-centered tetrahedron-octahedron transition in advancing Al-Sb-Te phase change properties.
    Xia M, Ding K, Rao F, Li X, Wu L, Song Z.
    Sci Rep; 2015 Feb 24; 5():8548. PubMed ID: 25709082
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  • 8. Pressure-induced reversible amorphization and an amorphous-amorphous transition in Ge₂Sb₂Te₅ phase-change memory material.
    Sun Z, Zhou J, Pan Y, Song Z, Mao HK, Ahuja R.
    Proc Natl Acad Sci U S A; 2011 Jun 28; 108(26):10410-4. PubMed ID: 21670255
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  • 9. Low-consumption phase change material with good data retention selected from SbxTe.
    Gu Y, Zhang T, Song Z, Liu B, Feng S.
    J Nanosci Nanotechnol; 2010 Nov 28; 10(11):7040-4. PubMed ID: 21137861
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  • 10. Te-centric view of the phase change mechanism in Ge-Sb-Te alloys.
    Sen S, Edwards TG, Cho JY, Joo YC.
    Phys Rev Lett; 2012 May 11; 108(19):195506. PubMed ID: 23003059
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  • 13. Atomic and electronic structures of amorphous Ge(2)Sb(2)Te(5); melt-quenched versus ideal glasses.
    Cho E, Im J, Park C, Son WJ, Kim DH, Horii H, Ihm J, Han S.
    J Phys Condens Matter; 2010 May 26; 22(20):205504. PubMed ID: 21393709
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  • 14. Origin of short- and medium-range order in supercooled liquid Ge3Sb2Te6 using ab initio molecular dynamics simulations.
    Qiao C, Guo YR, Wang S, Jia Y, Wang CZ, Ho KM.
    Phys Chem Chem Phys; 2020 May 07; 22(17):9759-9766. PubMed ID: 32334427
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  • 17. Microscopic origin of the fast crystallization ability of Ge-Sb-Te phase-change memory materials.
    Hegedüs J, Elliott SR.
    Nat Mater; 2008 May 07; 7(5):399-405. PubMed ID: 18362909
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  • 18. Controllable crystal growth and fast reversible crystallization-to-amorphization in Sb2Te-TiO2 films.
    Wang G, Li C, Shi D, Nie Q, Wang H, Shen X, Lu Y.
    Sci Rep; 2017 Apr 11; 7():46279. PubMed ID: 28397858
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  • 19. Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application.
    Chen X, Zheng Y, Zhu M, Ren K, Wang Y, Li T, Liu G, Guo T, Wu L, Liu X, Cheng Y, Song Z.
    Sci Rep; 2018 May 01; 8(1):6839. PubMed ID: 29717216
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