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584 related items for PubMed ID: 33793185

  • 1. Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack.
    Cho MH, Choi CH, Seul HJ, Cho HC, Jeong JK.
    ACS Appl Mater Interfaces; 2021 Apr 14; 13(14):16628-16640. PubMed ID: 33793185
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  • 2. Comparative Study of Atomic Layer Deposited Indium-Based Oxide Transistors with a Fermi Energy Level-Engineered Heterojunction Structure Channel through a Cation Combinatorial Approach.
    Cho MH, Choi CH, Jeong JK.
    ACS Appl Mater Interfaces; 2022 Apr 27; 14(16):18646-18661. PubMed ID: 35426670
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  • 4. Physical Properties of an Ultrathin Al2O3/HfO2 Composite Film by Atomic Layer Deposition and the Application in Thin-Film Transistors.
    Xu Y, Chen H, Xu H, Chen M, Zhou P, Li S, Zhang G, Shi W, Yang X, Ding X, Wei B.
    ACS Appl Mater Interfaces; 2023 Apr 05; 15(13):16874-16881. PubMed ID: 36942855
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  • 5. High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al₂O₃ Gate Dielectric.
    Choi S, Kim KT, Park SK, Kim YH.
    Materials (Basel); 2019 Mar 13; 12(6):. PubMed ID: 30871272
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  • 6. Enhanced Electrical Properties and Stability in IGZO TFTs via Low-Temperature Activation with MgOx Layer.
    Kim MS, Kim HT, Jung S, Kim YW, Lee S, Kim HJ.
    ACS Appl Mater Interfaces; 2024 Aug 07; 16(31):41127-41133. PubMed ID: 39058501
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  • 8. Near-Ideal Top-Gate Controllability of InGaZnO Thin-Film Transistors by Suppressing Interface Defects with an Ultrathin Atomic Layer Deposited Gate Insulator.
    Li J, Zhang Y, Wang J, Yang H, Zhou X, Chan M, Wang X, Lu L, Zhang S.
    ACS Appl Mater Interfaces; 2023 Feb 15; 15(6):8666-8675. PubMed ID: 36709447
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  • 9. Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric.
    Choi S, Song S, Kim T, Shin JC, Jo JW, Park SK, Kim YH.
    Micromachines (Basel); 2020 Nov 25; 11(12):. PubMed ID: 33255690
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  • 10. Atomic Layer Deposition Process-Enabled Carrier Mobility Boosting in Field-Effect Transistors through a Nanoscale ZnO/IGO Heterojunction.
    Seul HJ, Kim MJ, Yang HJ, Cho MH, Cho MH, Song WB, Jeong JK.
    ACS Appl Mater Interfaces; 2020 Jul 29; 12(30):33887-33898. PubMed ID: 32571011
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  • 12. High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric.
    Shao Y, Wu X, Zhang MN, Liu WJ, Ding SJ.
    Nanoscale Res Lett; 2019 Apr 02; 14(1):122. PubMed ID: 30941527
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  • 13. Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility.
    Everaerts K, Zeng L, Hennek JW, Camacho DI, Jariwala D, Bedzyk MJ, Hersam MC, Marks TJ.
    ACS Appl Mater Interfaces; 2013 Nov 27; 5(22):11884-93. PubMed ID: 24187917
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  • 14. Effects of HfO2 encapsulation on electrical performances of few-layered MoS2 transistor with ALD HfO2 as back-gate dielectric.
    Xu J, Wen M, Zhao X, Liu L, Song X, Lai PT, Tang WM.
    Nanotechnology; 2018 Aug 24; 29(34):345201. PubMed ID: 29808825
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  • 15. Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.
    Xiao X, Zhang L, Shao Y, Zhou X, He H, Zhang S.
    ACS Appl Mater Interfaces; 2018 Aug 08; 10(31):25850-25857. PubMed ID: 29235839
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  • 20. Near-ideal subthreshold swing MoS2 back-gate transistors with an optimized ultrathin HfO2 dielectric layer.
    Pan Y, Jia K, Huang K, Wu Z, Bai G, Yu J, Zhang Z, Zhang Q, Yin H.
    Nanotechnology; 2019 Mar 01; 30(9):095202. PubMed ID: 30561381
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