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Journal Abstract Search

277 related items for PubMed ID: 34468129

  • 1. Magnetoelectric Coupling at the Ni/Hf0.5Zr0.5O2 Interface.
    Dmitriyeva A, Mikheev V, Zarubin S, Chouprik A, Vinai G, Polewczyk V, Torelli P, Matveyev Y, Schlueter C, Karateev I, Yang Q, Chen Z, Tao L, Tsymbal EY, Zenkevich A.
    ACS Nano; 2021 Sep 28; 15(9):14891-14902. PubMed ID: 34468129
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  • 4. Effect of Polarization Reversal in Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Devices on Electronic Conditions at Interfaces Studied in Operando by Hard X-ray Photoemission Spectroscopy.
    Matveyev Y, Negrov D, Chernikova A, Lebedinskii Y, Kirtaev R, Zarubin S, Suvorova E, Gloskovskii A, Zenkevich A.
    ACS Appl Mater Interfaces; 2017 Dec 13; 9(49):43370-43376. PubMed ID: 29160064
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  • 5. Robust multiferroicity and magnetic modulation of the ferroelectric imprint field in heterostructures comprising epitaxial Hf0.5Zr0.5O2 and Co.
    Zakusylo T, Quintana A, Lenzi V, Silva JPB, Marques L, Yano JLO, Lyu J, Sort J, Sánchez F, Fina I.
    Mater Horiz; 2024 May 20; 11(10):2388-2396. PubMed ID: 38441222
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  • 8. Enhanced Switching Reliability of Hf0.5Zr0.5O2 Ferroelectric Films Induced by Interface Engineering.
    Huang F, Saini B, Yu Z, Yoo C, Thampy V, He X, Baniecki JD, Tsai W, Meng AC, McIntyre PC, Wong S.
    ACS Appl Mater Interfaces; 2023 Nov 01; 15(43):50246-50253. PubMed ID: 37856882
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  • 9. A new approach to achieving strong ferroelectric properties in TiN/Hf0.5Zr0.5O2/TiN devices.
    Kim H, Kashir A, Oh S, Hwang H.
    Nanotechnology; 2021 Jan 29; 32(5):055703. PubMed ID: 33053526
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  • 15. Improved Ferroelectric Properties in Hf0.5Zr0.5O2 Thin Films by Microwave Annealing.
    Zhao B, Yan Y, Bi J, Xu G, Xu Y, Yang X, Fan L, Liu M.
    Nanomaterials (Basel); 2022 Aug 30; 12(17):. PubMed ID: 36080036
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  • 16. Epitaxial Integration on Si(001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance.
    Lyu J, Fina I, Fontcuberta J, Sánchez F.
    ACS Appl Mater Interfaces; 2019 Feb 13; 11(6):6224-6229. PubMed ID: 30657323
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  • 17. Improved Endurance of Ferroelectric Hf0.5Zr0.5O2 Using Laminated-Structure Interlayer.
    Chen M, Lv S, Wang B, Jiang P, Chen Y, Ding Y, Wang Y, Chen Y, Wang Y.
    Nanomaterials (Basel); 2023 May 11; 13(10):. PubMed ID: 37242025
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  • 18. Direct comparison of ferroelectric properties in Hf0.5Zr0.5O2 between thermal and plasma-enhanced atomic layer deposition.
    Hur J, Tasneem N, Choe G, Wang P, Wang Z, Khan AI, Yu S.
    Nanotechnology; 2020 Dec 11; 31(50):505707. PubMed ID: 32663805
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  • 19. Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO2 Insets.
    Koroleva AA, Chernikova AG, Zarubin SS, Korostylev E, Khakimov RR, Zhuk MY, Markeev AM.
    ACS Omega; 2022 Dec 20; 7(50):47084-47095. PubMed ID: 36570284
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  • 20. Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory.
    Toprasertpong K, Tahara K, Hikosaka Y, Nakamura K, Saito H, Takenaka M, Takagi S.
    ACS Appl Mater Interfaces; 2022 Nov 16; 14(45):51137-51148. PubMed ID: 36319949
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