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139 related items for PubMed ID: 34904602
1. Atomic layer deposition of SnSex thin films using Sn(N(CH3)2)4 and Se(Si(CH3)3)2 with NH3 co-injection. Jeon JW, Yoo C, Kim W, Choi W, Park B, Lee YK, Hwang CS. Dalton Trans; 2022 Jan 04; 51(2):594-601. PubMed ID: 34904602 [Abstract] [Full Text] [Related]
2. Low-Temperature Atomic Layer Deposition of Highly Conformal Tin Nitride Thin Films for Energy Storage Devices. Ansari MZ, Nandi DK, Janicek P, Ansari SA, Ramesh R, Cheon T, Shong B, Kim SH. ACS Appl Mater Interfaces; 2019 Nov 20; 11(46):43608-43621. PubMed ID: 31633331 [Abstract] [Full Text] [Related]
3. Effect of Sn Content in a CuSnZn Metal Precursor on Formation of MoSe₂ Film during Selenization in Se+SnSe Vapor. Yao L, Ao J, Jeng MJ, Bi J, Gao S, Sun G, He Q, Zhou Z, Sun Y, Chang LB. Materials (Basel); 2016 Mar 29; 9(4):. PubMed ID: 28773366 [Abstract] [Full Text] [Related]
4. Atmospheric atomic layer deposition of SnO2 thin films with tin(II) acetylacetonate and water. Nguyen VH, Akbari M, Sekkat A, Ta HTT, Resende J, Jiménez C, Musselman KP, Muñoz-Rojas D. Dalton Trans; 2022 Jun 21; 51(24):9278-9290. PubMed ID: 35670303 [Abstract] [Full Text] [Related]
5. Self-limiting stoichiometry in SnSe thin films. Chin JR, Frye MB, Liu DS, Hilse M, Graham IC, Shallenberger J, Wang K, Engel-Herbert R, Wang M, Shin YK, Nayir N, van Duin ACT, Garten LM. Nanoscale; 2023 Jun 15; 15(23):9973-9984. PubMed ID: 37272496 [Abstract] [Full Text] [Related]
6. Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices. Mai L, Zanders D, Subaşı E, Ciftyurek E, Hoppe C, Rogalla D, Gilbert W, Arcos TL, Schierbaum K, Grundmeier G, Bock C, Devi A. ACS Appl Mater Interfaces; 2019 Jan 23; 11(3):3169-3180. PubMed ID: 30624887 [Abstract] [Full Text] [Related]
7. Significance of Pairing In/Ga Precursor Structures on PEALD InGaOx Thin-Film Transistor. Hong T, Jeong HJ, Lee HM, Choi SH, Lim JH, Park JS. ACS Appl Mater Interfaces; 2021 Jun 23; 13(24):28493-28502. PubMed ID: 34115464 [Abstract] [Full Text] [Related]
8. Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition. Shih HY, Lin MC, Chen LY, Chen MJ. Nanotechnology; 2015 Jan 09; 26(1):014002. PubMed ID: 25494474 [Abstract] [Full Text] [Related]
9. Atomic layer deposition of GeSe films using HGeCl3 and [(CH3)3Si]2Se with the discrete feeding method for the ovonic threshold switch. Kim W, Yoo S, Yoo C, Park ES, Jeon J, Kwon YJ, Woo KS, Kim HJ, Lee YK, Hwang CS. Nanotechnology; 2018 Sep 07; 29(36):365202. PubMed ID: 29920183 [Abstract] [Full Text] [Related]
10. Atomic Layer Deposition of Zirconium-Based High-k Metal Gate Oxide: Effect of Si Containing Zr Precursor. Cho JH, Lee SI, Kim JH, Yim SJ, Shin HS, Han MJ, Chae WM, Lee SD, Ahn CY, Kim MW. J Nanosci Nanotechnol; 2015 Jan 07; 15(1):382-5. PubMed ID: 26328365 [Abstract] [Full Text] [Related]
11. Atomic Layer Deposition of GexSe1-x Thin Films for Endurable Ovonic Threshold Selectors with a Low Threshold Voltage. Yoo C, Kim W, Jeon JW, Park ES, Ha M, Lee YK, Hwang CS. ACS Appl Mater Interfaces; 2020 May 20; 12(20):23110-23118. PubMed ID: 32345012 [Abstract] [Full Text] [Related]
12. Amidoxime-Containing Ti Precursors for Atomic Layer Deposition of TiN Thin Films with Suppressed Columnar Microstructure. Lee GY, Yeo S, Cho CM, Oh SH, Park H, Park BK, Son SU, Eom T, Chung TM. Inorg Chem; 2023 Mar 20; 62(11):4680-4687. PubMed ID: 36935645 [Abstract] [Full Text] [Related]
13. The Properties of Cu Thin Films on Ru Depending on the ALD Temperature. Yoon HC, Shin JH, Park HS, Suh SJ. J Nanosci Nanotechnol; 2015 Feb 20; 15(2):1601-4. PubMed ID: 26353698 [Abstract] [Full Text] [Related]
14. Growth Temperature Influence on Atomic-Layer-Deposited In2O3 Thin Films and Their Application in Inorganic Perovskite Solar Cells. Farva U, Lee HW, Kim RN, Lee DG, Kang DW, Kim J. Nanomaterials (Basel); 2021 Aug 11; 11(8):. PubMed ID: 34443878 [Abstract] [Full Text] [Related]
15. Tin guanidinato complexes: oxidative control of Sn, SnS, SnSe and SnTe thin film deposition. Ahmet IY, Hill MS, Raithby PR, Johnson AL. Dalton Trans; 2018 Apr 03; 47(14):5031-5048. PubMed ID: 29561027 [Abstract] [Full Text] [Related]
16. Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors. Ma Q, Zheng HM, Shao Y, Zhu B, Liu WJ, Ding SJ, Zhang DW. Nanoscale Res Lett; 2018 Jan 09; 13(1):4. PubMed ID: 29318402 [Abstract] [Full Text] [Related]
17. High-Performance Thin-Film Transistors of Quaternary Indium-Zinc-Tin Oxide Films Grown by Atomic Layer Deposition. Baek IH, Pyeon JJ, Han SH, Lee GY, Choi BJ, Han JH, Chung TM, Hwang CS, Kim SK. ACS Appl Mater Interfaces; 2019 Apr 24; 11(16):14892-14901. PubMed ID: 30945837 [Abstract] [Full Text] [Related]
20. Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(NtBu)(NEt2)3, Ta(NtBu)(NEt2)2Cp, and H2O. Song SJ, Park T, Yoon KJ, Yoon JH, Kwon DE, Noh W, Lansalot-Matras C, Gatineau S, Lee HK, Gautam S, Cho DY, Lee SW, Hwang CS. ACS Appl Mater Interfaces; 2017 Jan 11; 9(1):537-547. PubMed ID: 27936581 [Abstract] [Full Text] [Related] Page: [Next] [New Search]