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Journal Abstract Search

139 related items for PubMed ID: 34904602

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  • 44. Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition.
    Sheng J, Lee HJ, Oh S, Park JS.
    ACS Appl Mater Interfaces; 2016 Dec 14; 8(49):33821-33828. PubMed ID: 27960372
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  • 49. Characteristics of Ge-Sb-Te films prepared by cyclic pulsed plasma-enhanced chemical vapor deposition.
    Suk KS, Jung HN, Woo HG, Park DH, Kim DH.
    J Nanosci Nanotechnol; 2010 May 14; 10(5):3354-6. PubMed ID: 20358955
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  • 50. Plasma enhanced atomic layer deposition of plasmonic TiN ultrathin films using TDMATi and NH3.
    Hansen K, Cardona M, Dutta A, Yang C.
    Materials (Basel); 2020 Feb 27; 13(5):. PubMed ID: 32120834
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  • 52. Hot wire chemical vapor deposition chemistry in the gas phase and on the catalyst surface with organosilicon compounds.
    Shi Y.
    Acc Chem Res; 2015 Feb 17; 48(2):163-73. PubMed ID: 25586211
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  • 54. Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application.
    Kim HY, Jung EA, Mun G, Agbenyeke RE, Park BK, Park JS, Son SU, Jeon DJ, Park SK, Chung TM, Han JH.
    ACS Appl Mater Interfaces; 2016 Oct 12; 8(40):26924-26931. PubMed ID: 27673338
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  • 59. Low-temperature roll-to-roll atmospheric atomic layer deposition of Al₂O₃ thin films.
    Ali K, Choi KH.
    Langmuir; 2014 Dec 02; 30(47):14195-203. PubMed ID: 25407477
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