These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


Pubmed for Handhelds

PUBMED FOR HANDHELDS

Journal Abstract Search

212 related items for PubMed ID: 34982564

  • 1. Bipolar Electric-Field Switching of Perpendicular Magnetic Tunnel Junctions through Voltage-Controlled Exchange Coupling.
    Zhang D, Bapna M, Jiang W, Sousa D, Liao YC, Zhao Z, Lv Y, Sahu P, Lyu D, Naeemi A, Low T, Majetich SA, Wang JP.
    Nano Lett; 2022 Jan 26; 22(2):622-629. PubMed ID: 34982564
    [Abstract] [Full Text] [Related]

  • 2. Bidirectional switching assisted by interlayer exchange coupling in asymmetric magnetic tunnel junctions.
    de Sousa DJP, Haney PM, Zhang DL, Wang JP, Low T.
    Phys Rev B; 2020 Feb 15; 101(8):. PubMed ID: 36452278
    [Abstract] [Full Text] [Related]

  • 3. Spin-orbit torque switching without an external field using interlayer exchange coupling.
    Lau YC, Betto D, Rode K, Coey JM, Stamenov P.
    Nat Nanotechnol; 2016 Sep 15; 11(9):758-62. PubMed ID: 27240416
    [Abstract] [Full Text] [Related]

  • 4. Voltage-controlled interlayer coupling in perpendicularly magnetized magnetic tunnel junctions.
    Newhouse-Illige T, Liu Y, Xu M, Reifsnyder Hickey D, Kundu A, Almasi H, Bi C, Wang X, Freeland JW, Keavney DJ, Sun CJ, Xu YH, Rosales M, Cheng XM, Zhang S, Mkhoyan KA, Wang WG.
    Nat Commun; 2017 May 16; 8():15232. PubMed ID: 28508882
    [Abstract] [Full Text] [Related]

  • 5. Origin of easy magnetization switching in magnetic tunnel junctions with voltage-controlled interfacial anisotropy.
    Pertsev NA.
    Sci Rep; 2013 Sep 25; 3():2757. PubMed ID: 24067783
    [Abstract] [Full Text] [Related]

  • 6. Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium.
    Liu Y, Zhou B, Zhu JJ.
    Sci Rep; 2019 Jan 23; 9(1):325. PubMed ID: 30674984
    [Abstract] [Full Text] [Related]

  • 7. Controllable field-free switching of perpendicular magnetization through bulk spin-orbit torque in symmetry-broken ferromagnetic films.
    Xie X, Zhao X, Dong Y, Qu X, Zheng K, Han X, Han X, Fan Y, Bai L, Chen Y, Dai Y, Tian Y, Yan S.
    Nat Commun; 2021 Apr 30; 12(1):2473. PubMed ID: 33931644
    [Abstract] [Full Text] [Related]

  • 8. Observation and theoretical calculations of voltage-induced large magnetocapacitance beyond 330% in MgO-based magnetic tunnel junctions.
    Ogata K, Nakayama Y, Xiao G, Kaiju H.
    Sci Rep; 2021 Jul 12; 11(1):13807. PubMed ID: 34253744
    [Abstract] [Full Text] [Related]

  • 9. Understanding stability diagram of perpendicular magnetic tunnel junctions.
    Skowroński W, Czapkiewicz M, Ziętek S, Chęciński J, Frankowski M, Rzeszut P, Wrona J.
    Sci Rep; 2017 Aug 31; 7(1):10172. PubMed ID: 28860571
    [Abstract] [Full Text] [Related]

  • 10. Field-Free Spin-Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current.
    Kateel V, Krizakova V, Rao S, Cai K, Gupta M, Monteiro MG, Yasin F, Sorée B, De Boeck J, Couet S, Gambardella P, Kar GS, Garello K.
    Nano Lett; 2023 Jun 28; 23(12):5482-5489. PubMed ID: 37295781
    [Abstract] [Full Text] [Related]

  • 11. Voltage-Assisted Magnetic Switching in MgO/CoFeB-Based Magnetic Tunnel Junctions by Way of Interface Reconstruction.
    Ko J, Hong J.
    ACS Appl Mater Interfaces; 2017 Dec 06; 9(48):42296-42301. PubMed ID: 29154533
    [Abstract] [Full Text] [Related]

  • 12. Electric-field-assisted switching in magnetic tunnel junctions.
    Wang WG, Li M, Hageman S, Chien CL.
    Nat Mater; 2011 Nov 13; 11(1):64-8. PubMed ID: 22081084
    [Abstract] [Full Text] [Related]

  • 13. Perpendicular Manganite Magnetic Tunnel Junctions Induced by Interfacial Coupling.
    Liu Q, Liu P, Li X, Hu S, Zhu Y, Jin C, Han W, Ji Y, Xu Z, Hu S, Ye M, Chen L.
    ACS Appl Mater Interfaces; 2022 Mar 23; 14(11):13883-13890. PubMed ID: 35274527
    [Abstract] [Full Text] [Related]

  • 14. Nanosecond-Timescale Low Energy Switching of In-Plane Magnetic Tunnel Junctions through Dynamic Oersted-Field-Assisted Spin Hall Effect.
    Aradhya SV, Rowlands GE, Oh J, Ralph DC, Buhrman RA.
    Nano Lett; 2016 Oct 12; 16(10):5987-5992. PubMed ID: 27327619
    [Abstract] [Full Text] [Related]

  • 15. A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction.
    Ikeda S, Miura K, Yamamoto H, Mizunuma K, Gan HD, Endo M, Kanai S, Hayakawa J, Matsukura F, Ohno H.
    Nat Mater; 2010 Sep 12; 9(9):721-4. PubMed ID: 20622862
    [Abstract] [Full Text] [Related]

  • 16. Unusual spin-orbit torque switching in perpendicular synthetic antiferromagnets with strong interlayer exchange coupling.
    Luo X, Wang Y, Liu S, Guo T, Han X, Yu G.
    J Phys Condens Matter; 2023 Apr 11; 35(26):. PubMed ID: 36958042
    [Abstract] [Full Text] [Related]

  • 17. Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control.
    Liu H, Wang R, Guo P, Wen Z, Feng J, Wei H, Han X, Ji Y, Zhang S.
    Sci Rep; 2015 Dec 14; 5():18269. PubMed ID: 26658213
    [Abstract] [Full Text] [Related]

  • 18. Field-free switching of perpendicular magnetization through spin-orbit torque in FePt/[TiN/NiFe]5 multilayers.
    Sun C, Jiao Y, Zuo C, Hu X, Tao Y, Jin F, Mo W, Hui Y, Song J, Dong K.
    Nanoscale; 2021 Nov 11; 13(43):18293-18299. PubMed ID: 34723309
    [Abstract] [Full Text] [Related]

  • 19. Electric-field control of nonvolatile resistance state of perpendicular magnetic tunnel junction via magnetoelectric coupling.
    Zhang Y, Sun W, Cao K, Yang XX, Yang Y, Lu S, Du A, Hu C, Feng C, Wang Y, Cai J, Cui B, Piao HG, Zhao W, Zhao Y.
    Sci Adv; 2024 Apr 19; 10(16):eadl4633. PubMed ID: 38640249
    [Abstract] [Full Text] [Related]

  • 20. Ultrathin perpendicular magnetic anisotropy CoFeB free layers for highly efficient, high speed writing in spin-transfer-torque magnetic random access memory.
    Iwata-Harms JM, Jan G, Serrano-Guisan S, Thomas L, Liu H, Zhu J, Lee YJ, Le S, Tong RY, Patel S, Sundar V, Shen D, Yang Y, He R, Haq J, Teng Z, Lam V, Liu P, Wang YJ, Zhong T, Fukuzawa H, Wang PK.
    Sci Rep; 2019 Dec 19; 9(1):19407. PubMed ID: 31857596
    [Abstract] [Full Text] [Related]

    Page: [Next] [New Search]
    of 11.