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Journal Abstract Search

223 related items for PubMed ID: 35274527

  • 41. Immunity of nanoscale magnetic tunnel junctions with perpendicular magnetic anisotropy to ionizing radiation.
    Montoya EA, Chen JR, Ngelale R, Lee HK, Tseng HW, Wan L, Yang E, Braganca P, Boyraz O, Bagherzadeh N, Nilsson M, Krivorotov IN.
    Sci Rep; 2020 Jun 23; 10(1):10220. PubMed ID: 32576911
    [Abstract] [Full Text] [Related]

  • 42. Perpendicular magnetic tunnel junction with a strained Mn-based nanolayer.
    Suzuki KZ, Ranjbar R, Okabayashi J, Miura Y, Sugihara A, Tsuchiura H, Mizukami S.
    Sci Rep; 2016 Jul 26; 6():30249. PubMed ID: 27457186
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  • 45. Designing van der Waals magnetic tunnel junctions with high tunnel magnetoresistance via Brillouin zone filtering.
    Li K, Guo Y, Robertson J, Zhao W, Lu H.
    Nanoscale; 2024 Oct 24; 16(41):19228-19238. PubMed ID: 39292184
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  • 46. Strongly bias-dependent tunnel magnetoresistance in manganite spin filter tunnel junctions.
    Prasad B, Zhang W, Jian J, Wang H, Blamire MG.
    Adv Mater; 2015 May 20; 27(19):3079-84. PubMed ID: 25845706
    [Abstract] [Full Text] [Related]

  • 47. Magnetic coherent tunnel junctions with periodic grating barrier.
    Fang H, Xiao M, Rui W, Du J, Tao Z.
    Sci Rep; 2016 Apr 11; 6():24300. PubMed ID: 27063998
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  • 48. Effect of coupling ability between a synthetic antiferromagnetic layer and pinned layer on a bridging layer of Ta, Ti, and Pt in perpendicular-magnetic tunnel junctions.
    Lee DY, Shim TH, Park JG.
    Nanotechnology; 2016 Jul 22; 27(29):295705. PubMed ID: 27292593
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  • 49. Bias dependence of tunneling magnetoresistance in magnetic tunnel junctions with asymmetric barriers.
    Kalitsov A, Zermatten PJ, Bonell F, Gaudin G, Andrieu S, Tiusan C, Chshiev M, Velev JP.
    J Phys Condens Matter; 2013 Dec 11; 25(49):496005. PubMed ID: 24195845
    [Abstract] [Full Text] [Related]

  • 50. Perpendicular Exchange-Biased Magnetotransport at the Vertical Heterointerfaces in La(0.7)Sr(0.3)MnO3:NiO Nanocomposites.
    Zhang W, Li L, Lu P, Fan M, Su Q, Khatkhatay F, Chen A, Jia Q, Zhang X, MacManus-Driscoll JL, Wang H.
    ACS Appl Mater Interfaces; 2015 Oct 07; 7(39):21646-51. PubMed ID: 26394548
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  • 51. Enhanced electric control of magnetic anisotropy via high thermal resistance capping layers in magnetic tunnel junctions.
    Okuno R, Yamada Y, Goto M, Mizuno T, Yamane T, Degawa N, Suzuki T, Shimura A, Aoki S, Urabe J, Hara S, Nomura H, Suzuki Y.
    J Phys Condens Matter; 2020 Jun 19; 32(38):. PubMed ID: 32574153
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  • 52. Enhancing TMR and spin-filtration by using out-of-plane graphene insulating barrier in MTJs.
    Meena S, Choudhary S.
    Phys Chem Chem Phys; 2017 Jul 21; 19(27):17765-17772. PubMed ID: 28657096
    [Abstract] [Full Text] [Related]

  • 53. Spin reorientation transition in CoFeB/MgO/CoFeB tunnel junction enabled by ultrafast laser-induced suppression of perpendicular magnetic anisotropy.
    Shelukhin LA, Gareev RR, Zbarsky V, Walowski J, Münzenberg M, Pertsev NA, Kalashnikova AM.
    Nanoscale; 2022 Jun 09; 14(22):8153-8162. PubMed ID: 35621055
    [Abstract] [Full Text] [Related]

  • 54. Magnetic Anisotropy Controlled by Distinct Interfacial Lattice Distortions at the La1- xSr xCoO3/La2/3Sr1/3MnO3 Interfaces.
    Zhang J, Chen X, Zhang Q, Han F, Zhang J, Zhang H, Zhang H, Huang H, Qi S, Yan X, Gu L, Chen Y, Hu F, Yan S, Liu B, Shen B, Sun J.
    ACS Appl Mater Interfaces; 2018 Nov 28; 10(47):40951-40957. PubMed ID: 30338983
    [Abstract] [Full Text] [Related]

  • 55. Tunneling anisotropic magnetoresistance driven by magnetic phase transition.
    Chen XZ, Feng JF, Wang ZC, Zhang J, Zhong XY, Song C, Jin L, Zhang B, Li F, Jiang M, Tan YZ, Zhou XJ, Shi GY, Zhou XF, Han XD, Mao SC, Chen YH, Han XF, Pan F.
    Nat Commun; 2017 Sep 06; 8(1):449. PubMed ID: 28878205
    [Abstract] [Full Text] [Related]

  • 56. Above-room Curie temperature and barrier-layer-dependent tunneling magnetoresistance in 1T-CrO2 monolayer based magnetic tunnel junctions.
    Liu J, Tang H, Gan M, Chen H, Shi X, Yuan H.
    Phys Chem Chem Phys; 2022 Sep 21; 24(36):22007-22015. PubMed ID: 36069513
    [Abstract] [Full Text] [Related]

  • 57. Effect of insertion layer on electrode properties in magnetic tunnel junctions with a zero-moment half-metal.
    Titova A, Fowley C, Clifford E, Lau YC, Borisov K, Betto D, Atcheson G, Hübner R, Xu C, Stamenov P, Coey M, Rode K, Lindner J, Fassbender J, Deac AM.
    Sci Rep; 2019 Mar 11; 9(1):4020. PubMed ID: 30858481
    [Abstract] [Full Text] [Related]

  • 58. Spin dependent tunneling and strain sensitivity in a Co2MnSb/HfIrSb magnetic tunneling junction: a first-principles study.
    Bhattacharya J, Rawat A, Pati R, Chakrabarti A, Pandey R.
    Phys Chem Chem Phys; 2024 Oct 17; 26(40):26064-26075. PubMed ID: 39377102
    [Abstract] [Full Text] [Related]

  • 59. Interfacial Ion Intermixing Effect on Four-Resistance States in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 Multiferroic Tunnel Junctions.
    Huang W, Lin Y, Yin Y, Feng L, Zhang D, Zhao W, Li Q, Li X.
    ACS Appl Mater Interfaces; 2016 Apr 27; 8(16):10422-9. PubMed ID: 27055530
    [Abstract] [Full Text] [Related]

  • 60. Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance.
    Shi J, Arpaci S, Lopez-Dominguez V, Sangwan VK, Mahfouzi F, Kim J, Athas JG, Hamdi M, Aygen C, Arava H, Phatak C, Carpentieri M, Jiang JS, Grayson MA, Kioussis N, Finocchio G, Hersam MC, Khalili Amiri P.
    Adv Mater; 2024 Jun 27; 36(24):e2312008. PubMed ID: 38501999
    [Abstract] [Full Text] [Related]

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