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Journal Abstract Search

142 related items for PubMed ID: 35478545

  • 1. Electronic properties of a two-dimensional van der Waals MoGe2N4/MoSi2N4 heterobilayer: effect of the insertion of a graphene layer and interlayer coupling.
    Pham DK.
    RSC Adv; 2021 Aug 23; 11(46):28659-28666. PubMed ID: 35478545
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  • 2. Two-Dimensional Boron Phosphide/MoGe2N4 van der Waals Heterostructure: A Promising Tunable Optoelectronic Material.
    Nguyen C, Hoang NV, Phuc HV, Sin AY, Nguyen CV.
    J Phys Chem Lett; 2021 Jun 03; 12(21):5076-5084. PubMed ID: 34028284
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  • 3. Two-Dimensional Metal/Semiconductor Contact in a Janus MoSH/MoSi2N4 van der Waals Heterostructure.
    Nguyen CV, Nguyen CQ, Nguyen ST, Ang YS, Hieu NV.
    J Phys Chem Lett; 2022 Mar 24; 13(11):2576-2582. PubMed ID: 35289630
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  • 4. Theoretical prediction of the electronic structure, optical properties and contact characteristics of a type-I MoS2/MoGe2N4 heterostructure towards optoelectronic devices.
    Nguyen ST, Pham KD.
    Dalton Trans; 2024 May 28; 53(21):9072-9080. PubMed ID: 38738357
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  • 5. Tuneable Schottky contact of MoSi2N4/TaS2 van der Waals heterostructure.
    Xia J, Gu Y, Mai J, Hu T, Wang Q, Xie C, Wu Y, Wang X.
    Heliyon; 2023 Oct 28; 9(10):e20619. PubMed ID: 37867820
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  • 8. Interfacial Electronic Properties and Tunable Contact Types in Graphene/Janus MoGeSiN4 Heterostructures.
    Binh NTT, Nguyen CQ, Vu TV, Nguyen CV.
    J Phys Chem Lett; 2021 Apr 29; 12(16):3934-3940. PubMed ID: 33872012
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  • 10. First principles study of BAs/MoSi2N4 van der Waals heterostructure: tunable electronic and optical properties via vertical strain.
    Qi Y, Yao C, Zhao J, Zeng H.
    Phys Chem Chem Phys; 2023 Oct 25; 25(41):28104-28112. PubMed ID: 37818606
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  • 11. Modulating the electronic properties and band alignments of the arsenene/MoSi2N4 van der Waals heterostructure via applying strain and electric field.
    Zhao J, Qi Y, Yao C, Zeng H.
    Phys Chem Chem Phys; 2023 Dec 13; 25(48):33023-33030. PubMed ID: 38032541
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  • 14. Tailoring the structural and electronic properties of an SnSe2/MoS2 van der Waals heterostructure with an electric field and the insertion of a graphene sheet.
    Vu TV, Hieu NV, Thao LTP, Hieu NN, Phuc HV, Bui HD, Idrees M, Amin B, Duc LM, Nguyen CV.
    Phys Chem Chem Phys; 2019 Oct 09; 21(39):22140-22148. PubMed ID: 31573019
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  • 18. First-principles study on the electronic structures and contact properties of graphene/XC (X = P, As, Sb, and Bi) van der Waals heterostructures.
    Hu X, Liu W, Yang J, Zhang S, Ye Y.
    Phys Chem Chem Phys; 2021 Nov 17; 23(44):25136-25142. PubMed ID: 34729574
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  • 20. Strain-Mediated Interlayer Coupling Effects on the Excitonic Behaviors in an Epitaxially Grown MoS2/WS2 van der Waals Heterobilayer.
    Pak S, Lee J, Lee YW, Jang AR, Ahn S, Ma KY, Cho Y, Hong J, Lee S, Jeong HY, Im H, Shin HS, Morris SM, Cha S, Sohn JI, Kim JM.
    Nano Lett; 2017 Sep 13; 17(9):5634-5640. PubMed ID: 28832158
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