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Journal Abstract Search

124 related items for PubMed ID: 35528573

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  • 2. Electrical Properties of Amorphous Indium Zinc Tin Oxide Thin Film Transistor with Y₂O₃ Gate Dielectric.
    Jauhari IM, Bak YG, Noviyana I, Putri MA, Lee JA, Heo YW, Lee HY.
    J Nanosci Nanotechnol; 2021 Mar 01; 21(3):1748-1753. PubMed ID: 33404442
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  • 3. Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack.
    Cho MH, Choi CH, Seul HJ, Cho HC, Jeong JK.
    ACS Appl Mater Interfaces; 2021 Apr 14; 13(14):16628-16640. PubMed ID: 33793185
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  • 4. Comparative Study of Atomic Layer Deposited Indium-Based Oxide Transistors with a Fermi Energy Level-Engineered Heterojunction Structure Channel through a Cation Combinatorial Approach.
    Cho MH, Choi CH, Jeong JK.
    ACS Appl Mater Interfaces; 2022 Apr 27; 14(16):18646-18661. PubMed ID: 35426670
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  • 5. Proton Conducting Perhydropolysilazane-Derived Gate Dielectric for Solution-Processed Metal Oxide-Based Thin-Film Transistors.
    Kang YH, Min BK, Kim SK, Bae G, Song W, Lee C, Cho SY, An KS.
    ACS Appl Mater Interfaces; 2020 Apr 01; 12(13):15396-15405. PubMed ID: 32148019
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  • 10. Low-voltage operation of ZrO2-gated n-type thin-film transistors based on a channel formed by hybrid phases of SnO and SnO2.
    Chu HC, Shen YS, Hsieh CH, Huang JH, Wu YH.
    ACS Appl Mater Interfaces; 2015 Jul 22; 7(28):15129-37. PubMed ID: 26148216
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  • 11. Aqueous combustion synthesis of aluminum oxide thin films and application as gate dielectric in GZTO solution-based TFTs.
    Branquinho R, Salgueiro D, Santos L, Barquinha P, Pereira L, Martins R, Fortunato E.
    ACS Appl Mater Interfaces; 2014 Nov 26; 6(22):19592-9. PubMed ID: 25354332
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  • 12. Mechanically Durable Organic/High-k Inorganic Hybrid Gate Dielectrics Enabled by Plasma-Polymerization of PTFE for Flexible Electronics.
    Kim GI, Jung J, Min WK, Kim MS, Jung S, Choi DH, Chung J, Kim HJ.
    ACS Appl Mater Interfaces; 2022 Jun 22; 14(24):28085-28096. PubMed ID: 35680562
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  • 14. Improving the electrical properties of transparent ZnO-based thin- film transistors using MgO gate dielectric with various oxygen concentrations.
    Hwang JD, Hsu ZR.
    Nanotechnology; 2023 Nov 10; 35(4):. PubMed ID: 37669648
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  • 15. A Sputtered Silicon Oxide Electrolyte for High-Performance Thin-Film Transistors.
    Ma X, Zhang J, Cai W, Wang H, Wilson J, Wang Q, Xin Q, Song A.
    Sci Rep; 2017 Apr 11; 7(1):809. PubMed ID: 28400576
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  • 17. High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al₂O₃ Gate Dielectric.
    Choi S, Kim KT, Park SK, Kim YH.
    Materials (Basel); 2019 Mar 13; 12(6):. PubMed ID: 30871272
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  • 18. Stretchable Polymer Gate Dielectric by Ultraviolet-Assisted Hafnium Oxide Doping at Low Temperature for High-Performance Indium Gallium Tin Oxide Transistors.
    Hur JS, Kim JO, Kim HA, Jeong JK.
    ACS Appl Mater Interfaces; 2019 Jun 19; 11(24):21675-21685. PubMed ID: 31124358
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