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Pubmed for Handhelds

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Journal Abstract Search

155 related items for PubMed ID: 35529372

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  • 24. Approaching subthreshold-swing limit for thin-film transistors by using a giant-dielectric-constant gate dielectric.
    Chen Z, Lan L, Peng J.
    RSC Adv; 2019 Aug 23; 9(46):27117-27124. PubMed ID: 35528573
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  • 26. Low-temperature solution-processed amorphous indium tin oxide field-effect transistors.
    Kim HS, Kim MG, Ha YG, Kanatzidis MG, Marks TJ, Facchetti A.
    J Am Chem Soc; 2009 Aug 12; 131(31):10826-7. PubMed ID: 19603806
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  • 35. Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack.
    Cho MH, Choi CH, Seul HJ, Cho HC, Jeong JK.
    ACS Appl Mater Interfaces; 2021 Apr 14; 13(14):16628-16640. PubMed ID: 33793185
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  • 39. Modulating Cationic Ratios for High-Performance Transparent Solution-Processed Electronics.
    John RA, Nguyen AC, Chen Y, Shukla S, Chen S, Mathews N.
    ACS Appl Mater Interfaces; 2016 Jan 20; 8(2):1139-46. PubMed ID: 26695104
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  • 40. Proton Conducting Perhydropolysilazane-Derived Gate Dielectric for Solution-Processed Metal Oxide-Based Thin-Film Transistors.
    Kang YH, Min BK, Kim SK, Bae G, Song W, Lee C, Cho SY, An KS.
    ACS Appl Mater Interfaces; 2020 Apr 01; 12(13):15396-15405. PubMed ID: 32148019
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