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Pubmed for Handhelds

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Journal Abstract Search

155 related items for PubMed ID: 35529372

  • 41. All-amorphous-oxide transparent, flexible thin-film transistors. Efficacy of bilayer gate dielectrics.
    Liu J, Buchholz DB, Hennek JW, Chang RP, Facchetti A, Marks TJ.
    J Am Chem Soc; 2010 Sep 01; 132(34):11934-42. PubMed ID: 20698566
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  • 42. High-mobility solution-processed tin oxide thin-film transistors with high-κ alumina dielectric working in enhancement mode.
    Huang G, Duan L, Dong G, Zhang D, Qiu Y.
    ACS Appl Mater Interfaces; 2014 Dec 10; 6(23):20786-94. PubMed ID: 25375760
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  • 43. High-Performance Tin Oxide Thin-Film Transistors Realized by Codoping and Their Application in Logic Circuits.
    Zhang T, Wei YF, Zhang CS, He G, Li TJ, Lin D.
    ACS Appl Mater Interfaces; 2024 Jul 17; 16(28):36577-36585. PubMed ID: 38972068
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  • 46. Transparent Electronics Using One Binary Oxide for All Transistor Layers.
    Alshammari FH, Hota MK, Alshareef HN.
    Small; 2018 Dec 17; 14(51):e1803969. PubMed ID: 30444579
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  • 55. Ambient-processable high capacitance hafnia-organic self-assembled nanodielectrics.
    Everaerts K, Emery JD, Jariwala D, Karmel HJ, Sangwan VK, Prabhumirashi PL, Geier ML, McMorrow JJ, Bedzyk MJ, Facchetti A, Hersam MC, Marks TJ.
    J Am Chem Soc; 2013 Jun 19; 135(24):8926-39. PubMed ID: 23688160
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  • 56. Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric.
    Park JH, Yoo YB, Lee KH, Jang WS, Oh JY, Chae SS, Baik HK.
    ACS Appl Mater Interfaces; 2013 Jan 23; 5(2):410-7. PubMed ID: 23267443
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  • 57. Solution-Based Indium-Zinc Oxide/Indium-Gallium-Zinc Oxide Double-Channel Thin-Film Transistors with Incorporated Hydrogen Peroxide.
    Jeon W, Choi P, Park A, Lee D, Choi D, Lee S, Choi B.
    J Nanosci Nanotechnol; 2020 Nov 01; 20(11):6643-6647. PubMed ID: 32604489
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  • 59. Capacitance-Voltage Characteristics of Thin-film Transistors Fabricated with Solution-Processed Semiconducting Carbon Nanotube Networks.
    Cai L, Zhang S, Miao J, Wei Q, Wang C.
    Nanoscale Res Lett; 2015 Dec 01; 10(1):999. PubMed ID: 26168866
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