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Journal Abstract Search

155 related items for PubMed ID: 35529372

  • 81. CMOS-compatible synaptic transistor gated by chitosan electrolyte-Ta2O5 hybrid electric double layer.
    Min SY, Cho WJ.
    Sci Rep; 2020 Sep 23; 10(1):15561. PubMed ID: 32968169
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  • 82. Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors.
    Je SY, Son BG, Kim HG, Park MY, Do LM, Choi R, Jeong JK.
    ACS Appl Mater Interfaces; 2014 Nov 12; 6(21):18693-703. PubMed ID: 25285585
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  • 86. Near-ideal subthreshold swing MoS2 back-gate transistors with an optimized ultrathin HfO2 dielectric layer.
    Pan Y, Jia K, Huang K, Wu Z, Bai G, Yu J, Zhang Z, Zhang Q, Yin H.
    Nanotechnology; 2019 Mar 01; 30(9):095202. PubMed ID: 30561381
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  • 87. Effect of Ta addition of co-sputtered amorphous tantalum indium zinc oxide thin film transistors with bias stability.
    Son DH, Kim DH, Park SN, Sung SJ, Kang JK.
    J Nanosci Nanotechnol; 2014 Nov 01; 14(11):8163-6. PubMed ID: 25958492
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  • 89. Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses.
    Wang D, Zhao W, Li H, Furuta M.
    Materials (Basel); 2018 Apr 05; 11(4):. PubMed ID: 29621154
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  • 90. Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimizing Channel Structure.
    Chen Z, Han D, Zhang X, Wang Y.
    Sci Rep; 2019 Nov 20; 9(1):17175. PubMed ID: 31748555
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  • 98. Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors.
    Heo JS, Choi S, Jo JW, Kang J, Park HH, Kim YH, Park SK.
    Materials (Basel); 2017 Jun 03; 10(6):. PubMed ID: 28772972
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  • 100. Photo-induced Reactive Oxygen Species Activation for Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Sodium Hypochlorite.
    Kim WG, Tak YJ, Yoo H, Kim HT, Park JW, Choi DH, Kim HJ.
    ACS Appl Mater Interfaces; 2021 Sep 22; 13(37):44531-44540. PubMed ID: 34505504
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