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Journal Abstract Search

144 related items for PubMed ID: 35540589

  • 1. Interface tailoring through the supply of optimized oxygen and hydrogen to semiconductors for highly stable top-gate-structured high-mobility oxide thin-film transistors.
    Ko JB, Lee SH, Park KW, Park SK.
    RSC Adv; 2019 Nov 04; 9(62):36293-36300. PubMed ID: 35540589
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  • 3. Near-Ideal Top-Gate Controllability of InGaZnO Thin-Film Transistors by Suppressing Interface Defects with an Ultrathin Atomic Layer Deposited Gate Insulator.
    Li J, Zhang Y, Wang J, Yang H, Zhou X, Chan M, Wang X, Lu L, Zhang S.
    ACS Appl Mater Interfaces; 2023 Feb 15; 15(6):8666-8675. PubMed ID: 36709447
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  • 4. Ultra-thin gate insulator of atomic-layer-deposited AlOxand HfOxfor amorphous InGaZnO thin-film transistors.
    Li J, Guan Y, Li J, Zhang Y, Zhang Y, Chan M, Wang X, Lu L, Zhang S.
    Nanotechnology; 2023 Apr 12; 34(26):. PubMed ID: 36962937
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  • 11. C-Axis Aligned Composite InZnO via Thermal Atomic Layer Deposition for 3D Nanostructured Semiconductor.
    Kim HM, Ryu SH, Kim S, Lee KH, Park JS.
    ACS Appl Mater Interfaces; 2024 Mar 27; 16(12):14995-15003. PubMed ID: 38487867
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  • 12. High-Performance Indium-Based Oxide Transistors with Multiple Channels Through Nanolaminate Structure Fabricated by Plasma-Enhanced Atomic Layer Deposition.
    Cho MH, Choi CH, Kim MJ, Hur JS, Kim T, Jeong JK.
    ACS Appl Mater Interfaces; 2023 Apr 19; 15(15):19137-19151. PubMed ID: 37023364
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  • 14. Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric.
    Choi S, Song S, Kim T, Shin JC, Jo JW, Park SK, Kim YH.
    Micromachines (Basel); 2020 Nov 25; 11(12):. PubMed ID: 33255690
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  • 15. Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition.
    Yoon SM, Seong NJ, Choi K, Seo GH, Shin WC.
    ACS Appl Mater Interfaces; 2017 Jul 12; 9(27):22676-22684. PubMed ID: 28653825
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  • 16. Amorphous IGZO TFT with High Mobility of ∼70 cm2/(V s) via Vertical Dimension Control Using PEALD.
    Sheng J, Hong T, Lee HM, Kim K, Sasase M, Kim J, Hosono H, Park JS.
    ACS Appl Mater Interfaces; 2019 Oct 30; 11(43):40300-40309. PubMed ID: 31584254
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  • 19. Thermal Dehydrogenation Impact on Positive Bias Stability of Amorphous InSnZnO Thin-Film Transistors.
    Lee S, Song YW, Park JM, Lee J, Ham W, Song MK, Namgung SD, Shin D, Kwon JY.
    ACS Appl Mater Interfaces; 2024 Nov 06; 16(44):61169-61178. PubMed ID: 39012887
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  • 20. Improving yield and performance in ZnO thin-film transistors made using selective area deposition.
    Nelson SF, Ellinger CR, Levy DH.
    ACS Appl Mater Interfaces; 2015 Feb 04; 7(4):2754-9. PubMed ID: 25562441
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