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Journal Abstract Search

148 related items for PubMed ID: 35558330

  • 1. Solution-processed amorphous ZrO2 gate dielectric films synthesized by a non-hydrolytic sol-gel route.
    Seon JB, Cho NK, Yoo G, Kim YS, Char K.
    RSC Adv; 2018 Nov 16; 8(68):39115-39119. PubMed ID: 35558330
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  • 2. Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor.
    Park JH, Yoo YB, Lee KH, Jang WS, Oh JY, Chae SS, Lee HW, Han SW, Baik HK.
    ACS Appl Mater Interfaces; 2013 Aug 28; 5(16):8067-75. PubMed ID: 23883390
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  • 3. Sol-Gel PMMA-ZrO2 Hybrid Layers as Gate Dielectric for Low-Temperature ZnO-Based Thin-Film Transistors.
    Alvarado-Beltrán CG, Almaral-Sánchez JL, Mejia I, Quevedo-López MA, Ramirez-Bon R.
    ACS Omega; 2017 Oct 31; 2(10):6968-6974. PubMed ID: 31457280
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  • 4. A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance.
    Kim H, Kwack YJ, Yun EJ, Choi WS.
    Sci Rep; 2016 Sep 19; 6():33576. PubMed ID: 27641430
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  • 5. Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.
    Liu A, Liu GX, Zhu HH, Xu F, Fortunato E, Martins R, Shan FK.
    ACS Appl Mater Interfaces; 2014 Oct 22; 6(20):17364-9. PubMed ID: 25285983
    [Abstract] [Full Text] [Related]

  • 6. Thermal effect of annealing-temperature on solution-processed high-k ZrO2 dielectrics.
    Zhou S, Zhang J, Fang Z, Ning H, Cai W, Zhu Z, Liang Z, Yao R, Guo D, Peng J.
    RSC Adv; 2019 Dec 18; 9(72):42415-42422. PubMed ID: 35542877
    [Abstract] [Full Text] [Related]

  • 7. Fabrication of solution-processed InSnZnO/ZrO2 thin film transistors.
    Hwang SM, Lee SM, Choi JH, Lim JH, Joo J.
    J Nanosci Nanotechnol; 2013 Nov 18; 13(11):7774-8. PubMed ID: 24245332
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  • 10. High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors.
    Jaehnike F, Pham DV, Anselmann R, Bock C, Kunze U.
    ACS Appl Mater Interfaces; 2015 Jul 01; 7(25):14011-7. PubMed ID: 26039187
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  • 14. Low Temperature Solution-Processed Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors.
    Ha YG.
    J Nanosci Nanotechnol; 2015 Sep 01; 15(9):6617-20. PubMed ID: 26716219
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  • 16. High-Mobility and Hysteresis-Free Flexible Oxide Thin-Film Transistors and Circuits by Using Bilayer Sol-Gel Gate Dielectrics.
    Jo JW, Kim KH, Kim J, Ban SG, Kim YH, Park SK.
    ACS Appl Mater Interfaces; 2018 Jan 24; 10(3):2679-2687. PubMed ID: 29280381
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  • 18. Microstructure and dielectric characteristics of high-k tetragonal ZrO2 films with various thicknesses processed by sol-gel method.
    Hwang SM, Lee SM, Choi JH, Park K, Joo J, Lim JH, Kim H.
    J Nanosci Nanotechnol; 2012 Apr 24; 12(4):3350-4. PubMed ID: 22849122
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